公开(公告)号：US20180278524A1

公开(公告)日：2018-09-27

申请号：US15995925

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong-Jhin Shin ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Seong-Hee Park ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee ,  Tae-Young Lee

IPC: H04L12/741 ,  H04L29/12 ,  H04L12/46

CPC classification number: H04L45/74 ,  H04L12/4625 ,  H04L61/103 ,  H04L61/25 ,  H04L61/6009 ,  H04L61/6013 ,  H04L61/6022

Abstract: A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge. The method further includes transmitting the address-converted first packet to a node of a second network

公开(公告)号：US09711505B2

公开(公告)日：2017-07-18

申请号：US15094282

申请日：2016-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Hak Hong ,  Bon-Woong Koo ,  Sung-Il Park ,  Kyu-Baik Chang ,  Keun-Hwi Cho ,  Dae-Won Ha

IPC: H01L23/52 ,  H01L27/092 ,  H01L29/78 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L27/0924 ,  H01L29/4238 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a gate structure on a substrate. The gate structure includes a first gate insulation pattern, a conductive pattern for controlling a threshold voltage, a first gate electrode and a first mask sequentially stacked. A dummy gate structure is spaced apart from the gate electrode. The dummy gate structure includes a first stressor pattern including titanium oxide. Source/drain regions are adjacent to the gate structure. The source/drain regions are doped with p-type impurities. The first stressor pattern may apply a stress onto the channel region of a transistor, and consequently the transistor having good electrical characteristics may be obtained.

公开(公告)号：US10944003B2

公开(公告)日：2021-03-09

申请号：US16816908

申请日：2020-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Chang-Hee Kim ,  Sung-Il Park ,  Dong-Hun Lee

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L21/8238 ,  H01L23/532 ,  H01L21/308 ,  H01L29/423 ,  H01L29/165 ,  H01L21/8234

Abstract: A vFET includes a first impurity region doped with first impurities at an upper portion of the substrate. A first diffusion control pattern is formed on the first impurity region. The first diffusion control pattern is configured to control the diffusion of the first impurities. A channel extends in a vertical direction substantially orthogonal to an upper surface of the substrate. A second impurity region is doped with second impurities on the channel. A second diffusion control pattern is between the channel and the second impurity region. The second diffusion control pattern is configured to control the diffusion of the second impurities. A gate structure is adjacent to the channel.

公开(公告)号：US10779143B2

公开(公告)日：2020-09-15

申请号：US15307612

申请日：2015-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Young Lee ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Seong-Hee Park ,  Bong-Jhin Shin ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee

IPC: H04W84/00 ,  H04W4/70 ,  H04W4/029 ,  H04L12/12 ,  H04L12/28 ,  H04L29/08 ,  H04W4/08 ,  H04W4/02 ,  H04W52/02 ,  H04B17/27 ,  G06F3/14 ,  H04W4/80 ,  H04B17/318

Abstract: According to an embodiment of the present disclosure, a method for operating an electronic device includes displaying a result of recognizing at least one other electronic device as at least one item, and sending a message requesting the at least one other electronic device to output an identifiable signal.

公开(公告)号：US10542390B2

公开(公告)日：2020-01-21

申请号：US15325712

申请日：2015-07-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Tae-Young Lee ,  Kyung-Whoon Cheun ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Seong-Hee Park ,  Bong-Jhin Shin ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee

IPC: H04W4/08 ,  H04W4/70 ,  H04W8/24 ,  H04W76/10 ,  H04W4/80 ,  H04W4/02 ,  H04W8/00

Abstract: The present invention defines a share group, and enables a content generated during an activity period to be automatically shared in the share group during the activity period. According to an embodiment of the present invention, an automatic content share method comprises, in a content share method, the steps of: setting a share group to share the content, an activity and an activity period; and sharing the generated content on the basis of the share group to share the content, the activity and the activity period, wherein the share group is formed on the basis of a proximity discovery.

公开(公告)号：US20150237515A1

公开(公告)日：2015-08-20

申请号：US14626476

申请日：2015-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Hee PARK ,  Jae-Eun Kang ,  Han-Su Kang ,  Sung-Il Park ,  Bong-Jhin Shin ,  Chil-Youl Yang ,  Myoung-Hwan Lee ,  Jang-Hee Lee ,  Chun-Ho Lee ,  Tae-Young Lee

IPC: H04W24/08 ,  H04W8/00

CPC classification number: H04W24/08 ,  G06Q30/02 ,  G06Q50/01 ,  H04W4/021 ,  H04W4/08 ,  H04W8/005

Abstract: A method of an electronic device and a method of a server are provided. The method of the electronic device includes receiving a broadcast signal broadcast by another electronic device via a wireless communication; determining, based on the received broadcast signal, a number of times the another electronic device has been detected; and sending a request for information to the another electronic device, based on the determined number of times the another electronic device has been detected. The method of the server includes receiving information from a first electronic device; receiving, from a second electronic device, an information request message relating to the first electronic device which has been detected a threshold number of times or more by the second electronic device; and transmitting information registered by the first electronic device to the second electronic device.

Abstract translation: 提供一种电子设备的方法和服务器的方法。 电子设备的方法包括：经由无线通信接收由另一电子设备广播的广播信号; 基于所接收的广播信号确定已经检测到另一电子设备的次数; 并且基于确定的另一电子设备被检测到的次数向另一电子设备发送信息请求。 服务器的方法包括从第一电子设备接收信息; 从所述第二电子设备接收与所述第二电子设备已经检测到阈值次数以上的所述第一电子设备相关的信息请求消息; 以及将由所述第一电子设备登记的信息发送到所述第二电子设备。

公开(公告)号：US20140225198A1

公开(公告)日：2014-08-14

申请号：US13829703

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Dae Suk ,  Hee-Soo Kang ,  Sung-Il Park ,  Sang-Hoon Lee

IPC: H01L27/092 ,  H01L21/8238

CPC classification number: H01L27/0922 ,  H01L21/823871

Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second gate electrodes disposed on the first and second regions, respectively, and first and second source/drain regions disposed on at least one side of the first and second gate electrodes, respectively. The device further includes first and second silicide regions in the first and second source/drain regions, respectively. A contact area between the first silicide region and the first source/drain region is differs in size from a contact area between the second silicide region and the second source/drain region. Methods of fabricating such devices are also provided.

Abstract translation: 半导体器件包括具有第一区域和第二区域的衬底，分别设置在第一和第二区域上的第一和第二栅极电极以及设置在第一和第二栅极的至少一侧上的第一和第二源极/漏极区域 电极。 该器件还分别包括第一和第二源极/漏极区域中的第一和第二硅化物区域。 第一硅化物区域和第一源极/漏极区域之间的接触区域的大小与第二硅化物区域和第二源极/漏极区域之间的接触面积不同。 还提供了制造这种装置的方法。