公开(公告)号：US10770473B2

公开(公告)日：2020-09-08

申请号：US16122037

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yun Lee ,  Jae-Hoon Jang ,  Jae-Duk Lee ,  Joon-Hee Lee ,  Young-Jin Jung

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/768 ,  H01L21/308 ,  H01L21/28 ,  H01L27/11565

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

公开(公告)号：US20190074292A1

公开(公告)日：2019-03-07

申请号：US16177566

申请日：2018-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNG-MIN HWANG ,  Han-Soo Kim ,  Won-Seok Cho ,  Jae-Hoon Jang

IPC: H01L27/11582 ,  H01L29/66 ,  H01L27/11578 ,  H01L21/768 ,  H01L21/306 ,  H01L21/285 ,  H01L21/265 ,  G11C16/04

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

公开(公告)号：US08964476B2

公开(公告)日：2015-02-24

申请号：US13867716

申请日：2013-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H01L27/115 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract translation: 非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统。 非易失性存储器件可以包括存储单元阵列和字线驱动器。 存储单元阵列可以包括多个存储单元。 字线驱动器可以被配置为分别将字线电压施加到连接到多个存储器单元的多个字线。 字线电压的大小可以根据多个字线的位置来确定。

公开(公告)号：US11411024B2

公开(公告)日：2022-08-09

申请号：US16995084

申请日：2020-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yun Lee ,  Jae-Hoon Jang ,  Jae-Duk Lee ,  Joon-Hee Lee ,  Young-Jin Jung

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/768 ,  H01L21/308 ,  H01L21/28 ,  H01L27/11565

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

公开(公告)号：US11177274B2

公开(公告)日：2021-11-16

申请号：US16177566

申请日：2018-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Min Hwang ,  Han-Soo Kim ,  Won-Seok Cho ,  Jae-Hoon Jang

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L21/265 ,  H01L21/285 ,  H01L21/306 ,  H01L21/768 ,  H01L29/66 ,  G11C16/04

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

公开(公告)号：US20210295895A1

公开(公告)日：2021-09-23

申请号：US17342048

申请日：2021-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Il Shim ,  Jae-Hoon Jang ,  Donghyuk Chae ,  Youngho Lim ,  Hansoo Kim ,  Jaehun Jeong

IPC: G11C11/408 ,  G11C11/4096 ,  G11C11/4074 ,  G11C5/06

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.