公开(公告)号：US20240306517A1

公开(公告)日：2024-09-12

申请号：US18179646

申请日：2023-03-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Samsung Electronics Co., Ltd.

Inventor： Chirag Garg ,  Panagiotis Charilaos Filippou ,  See-Hun Yang ,  Mahesh Samant ,  Ikhtiar ,  Jaewoo Jeong

IPC: H10N50/85 ,  H01L23/528 ,  H01L25/16 ,  H10B61/00 ,  H10B80/00 ,  H10N50/01 ,  H10N50/10

CPC classification number: H10N50/85 ,  H01L23/5283 ,  H01L25/16 ,  H10B61/10 ,  H10B61/22 ,  H10B80/00 ,  H10N50/01 ,  H10N50/10

Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and a MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure that includes a crystalline structure configured to template the Heusler compound. The first magnetic layer is formed over the templating structure. The templating structure includes a layer of a first binary alloy including platinum-aluminum (PtAl).

公开(公告)号：US11925124B2

公开(公告)日：2024-03-05

申请号：US17217766

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jaewoo Jeong ,  Panagiotis Charilaos Filippou ,  Yari Ferrante ,  Chirag Garg ,  Mahesh Samant ,  Ikhtiar ,  Dmytro Apalkov

IPC: H10N50/80 ,  G11C11/16 ,  H01F10/193 ,  H01F10/30 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/30 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85 ,  H01F10/3254 ,  H01F10/3268

Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

公开(公告)号：US20220223783A1

公开(公告)日：2022-07-14

申请号：US17217766

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jaewoo Jeong ,  Panagiotis Charilaos Filippou ,  Yari Ferrante ,  Chirag Garg ,  Mahesh Samant ,  Ikhtiar ,  Dmytro Apalkov

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.

公开(公告)号：US11251366B2

公开(公告)日：2022-02-15

申请号：US16800779

申请日：2020-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ikhtiar ,  Jaewoo Jeong ,  Mohamad Towfik Krounbi ,  Xueti Tang

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.