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    Capacitors and semiconductor devices including the same
    11.
    发明授权
    Capacitors and semiconductor devices including the same 有权

    公开(公告)号：US09773861B2

    公开(公告)日：2017-09-26

    申请号：US15064253

    申请日：2016-03-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Suk Lee ,  Jun-Goo Kang

    IPC: H01L29/94 ,  H01L49/02 ,  H01L27/06 ,  H01L27/108

    CPC classification number: H01L28/75 ,  H01L27/0629 ,  H01L27/10852 ,  H01L28/90

    Abstract: A capacitor may include a lower electrode structure, a dielectric layer on the lower electrode structure, and an upper electrode on the dielectric layer. The lower electrode structure may include first to third lower electrodes sequentially stacked, a first oxidation barrier pattern structure between the first lower electrode and the second lower electrode, and a second oxidation barrier pattern structure between the second lower electrode and the third lower electrode. The first oxidation barrier pattern structure may include first and second oxidation barrier patterns sequentially stacked on the first lower electrode, and the second oxidation barrier pattern structure may include third and fourth oxidation barrier patterns sequentially stacked on the second lower electrode.

    Semiconductor device
    12.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12205952B2

    公开(公告)日：2025-01-21

    申请号：US18539062

    申请日：2023-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

    IPC: H01L27/10 ,  G11C8/14 ,  H01L49/02 ,  H10B12/00

    Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

    SEMICONDUCTOR DEVICE
    15.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220037325A1

    公开(公告)日：2022-02-03

    申请号：US17220411

    申请日：2021-04-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jun Goo Kang ,  Sang Hyuck Ahn ,  Sang Yeol Kang ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Gi Hee Cho ,  Hong Sik Chae

    IPC: H01L27/108 ,  H01L49/02

    Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

    Capacitor and a semiconductor device including the same
    17.
    发明授权
    Capacitor and a semiconductor device including the same 有权

    公开(公告)号：US09997591B2

    公开(公告)日：2018-06-12

    申请号：US15212299

    申请日：2016-07-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin-su Lee ,  Gihee Cho ,  Dongkyun Park ,  Hyun-Suk Lee ,  Heesook Park ,  Jongmyeong Lee

    IPC: H01L49/02

    CPC classification number: H01L28/75

    Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate and capacitor electrically connected to the substrate. The capacitor includes a lower electrode, a dielectric layer disposed on the lower electrode, and an upper electrode disposed on the dielectric layer. The upper electrode includes a first electrode on the dielectric layer and a second electrode on the first electrode, such that the first electrode is disposed between the dielectric layer and the second electrode. The first electrode contains metal oxynitride having a formula of MxOyNz, in which an atomic ratio (y/x) of oxygen (O) to metallic element (M) is a value in the range from 0.5 to 2.

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