公开(公告)号：US09773861B2

公开(公告)日：2017-09-26

申请号：US15064253

申请日：2016-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Jun-Goo Kang

IPC: H01L29/94 ,  H01L49/02 ,  H01L27/06 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L27/0629 ,  H01L27/10852 ,  H01L28/90

Abstract: A capacitor may include a lower electrode structure, a dielectric layer on the lower electrode structure, and an upper electrode on the dielectric layer. The lower electrode structure may include first to third lower electrodes sequentially stacked, a first oxidation barrier pattern structure between the first lower electrode and the second lower electrode, and a second oxidation barrier pattern structure between the second lower electrode and the third lower electrode. The first oxidation barrier pattern structure may include first and second oxidation barrier patterns sequentially stacked on the first lower electrode, and the second oxidation barrier pattern structure may include third and fourth oxidation barrier patterns sequentially stacked on the second lower electrode.