Multiscale weighted matching and sensor fusion for dynamic vision sensor tracking

    公开(公告)号:US10510160B2

    公开(公告)日:2019-12-17

    申请号:US15458016

    申请日:2017-03-13

    Abstract: A Dynamic Vision Sensor (DVS) pose-estimation system includes a DVS, a transformation estimator, an inertial measurement unit (IMU) and a camera-pose estimator based on sensor fusion. The DVS detects DVS events and shapes frames based on a number of accumulated DVS events. The transformation estimator estimates a 3D transformation of the DVS camera based on an estimated depth and matches confidence-level values within a camera-projection model such that at least one of a plurality of DVS events detected during a first frame corresponds to a DVS event detected during a second subsequent frame. The IMU detects inertial movements of the DVS with respect to world coordinates between the first and second frames. The camera-pose estimator combines information from a change in a pose of the camera-projection model between the first frame and the second frame based on the estimated transformation and the detected inertial movements of the DVS.

    Synapse array, pulse shaper circuit and neuromorphic system
    13.
    发明授权
    Synapse array, pulse shaper circuit and neuromorphic system 有权
    突触阵列,脉冲整形电路和神经形态系统

    公开(公告)号:US09418333B2

    公开(公告)日:2016-08-16

    申请号:US14165392

    申请日:2014-01-27

    CPC classification number: G06N3/063 G06N3/049 G11C11/412

    Abstract: A synapse array based on a static random access memory (SRAM), a pulse shaper circuit, and a neuromorphic system are provided. The synapse array includes a plurality of synapse circuits. At least one synapse circuit among the plurality of synapse circuits includes at least one bias transistor and at least two cut-off transistors, and the at least one synapse circuit is configured to charge a membrane node of a neuron circuit connected with the at least one synapse circuit using a sub-threshold leakage current that passed through the at least one bias transistor.

    Abstract translation: 提供了基于静态随机存取存储器(SRAM),脉冲整形器电路和神经形态系统的突触阵列。 突触阵列包括多个突触电路。 所述多个突触电路中的至少一个突触电路包括至少一个偏置晶体管和至少两个截止晶体管,并且所述至少一个突触电路被配置为对与所述至少一个连接的神经元电路的膜节点进行充电 使用通过所述至少一个偏置晶体管的子阈值漏电流的突触电路。

    Proximity sensor and proximity sensing method using light quantity of reflection light
    14.
    发明授权
    Proximity sensor and proximity sensing method using light quantity of reflection light 有权
    接近传感器和接近感应方式使用光量反射光

    公开(公告)号:US09243904B2

    公开(公告)日:2016-01-26

    申请号:US13940349

    申请日:2013-07-12

    Abstract: A proximity sensor and proximity sensing method using a change in light quantity of a reflected light are disclosed. The proximity sensor may include a quantity change detection unit which detects a change in a quantity of reflected light which is output light which has been reflected by an object, where an intensity of the output light changes, and a proximity determination unit which determines a proximity of the object to the quantity change detection unit based on a change in the intensity of the output light and the detected change in the quantity of the reflected light.

    Abstract translation: 公开了一种使用反射光的光量变化的接近传感器和接近感测方法。 接近传感器可以包括量变化检测单元,其检测被输出光反射的光的反射光的量的变化,其中输出光的强度改变;以及接近度确定单元,其确定接近度 基于输出光的强度的变化和检测到的反射光量的变化,将物体的数量改变到量变化检测单元。

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