公开(公告)号：US10600643B2

公开(公告)日：2020-03-24

申请号：US15866568

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Hyun-jun Kim ,  Jin-sun Lee ,  Jae-soon Lim

IPC: H01L21/02 ,  C23C16/40 ,  H01L27/11582 ,  H01L27/108 ,  C23C16/455 ,  C23C16/06 ,  C23C16/02 ,  H01L21/28 ,  H01L27/1157

Abstract: A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300° C. to about 600° C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300° C. to about 600° C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

公开(公告)号：US10329312B2

公开(公告)日：2019-06-25

申请号：US15092953

申请日：2016-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyu-hee Park ,  Youn-soo Kim ,  Jae-soon Lim ,  Youn-joung Cho ,  Haruyoshi Sato ,  Naoki Yamada ,  Hiroyuki Uchiuzou

IPC: C07F7/10

Abstract: A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

公开(公告)号：US09790246B2

公开(公告)日：2017-10-17

申请号：US15468276

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Haruyoshi Sato ,  Takanori Koide ,  Naoki Yamada ,  Akio Saito ,  Akihiro Nishida

IPC: C07F15/00 ,  C07F15/04 ,  C09D1/00 ,  C23C16/06 ,  C23C16/455 ,  H01L21/285

CPC classification number: C07F15/045 ,  C09D1/00 ,  C23C16/06 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

公开(公告)号：US09391089B2

公开(公告)日：2016-07-12

申请号：US14598659

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-chul Youn ,  Gyu-hee Park ,  Youn-joung Cho ,  Seung-min Ryu

IPC: H01L27/115 ,  H01L21/768 ,  H01L21/285 ,  H01L29/49 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11582 ,  C23C16/045 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76879 ,  H01L27/11556 ,  H01L29/4916 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract translation: 提供一种制造半导体器件的方法。 制备包括形成孔的结构的基板。 包含镍醇盐化合物的前体气化。 通过在基材上提供包含镍醇盐化合物的蒸发前体，在孔中形成含镍层。