公开(公告)号：US12261093B2

公开(公告)日：2025-03-25

申请号：US17883726

申请日：2022-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho Kim ,  Jongbo Shim ,  Hwanpil Park ,  Jangwoo Lee

IPC: H01L23/31 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

公开(公告)号：US12237365B2

公开(公告)日：2025-02-25

申请号：US18456069

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US20240387503A1

公开(公告)日：2024-11-21

申请号：US18788803

申请日：2024-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungwook HWANG ,  Junsik Hwang ,  Dongho Kim ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong

IPC: H01L25/00 ,  H01L25/16 ,  H01L27/15

Abstract: Provided is a method of fabricating a hybrid element, the method including forming a plurality of first elements on a first substrate, separating a plurality of second elements grown on a second substrate from the second substrate, a material of the second substrate being different from a material of the first substrate, and transferring the plurality of second elements, separated from the second substrate, onto the first substrate, wherein, in the transferring, the plurality of second elements are spaced apart from each other by a fluidic self-assembly method, and wherein each of the plurality of second elements includes a shuttle layer grown on the second substrate, an element layer grown on the shuttle layer, and an electrode layer on the element layer.

公开(公告)号：US11876083B2

公开(公告)日：2024-01-16

申请号：US17407647

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho Kim ,  Ji Hwang Kim ,  Hwan Pil Park ,  Jongbo Shim

IPC: H01L23/02 ,  H01L25/10 ,  H01L25/065 ,  H01L21/48

CPC classification number: H01L25/105 ,  H01L21/4882 ,  H01L25/0655 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1094

Abstract: Provided is a semiconductor package comprising a lower package that includes a lower substrate and a lower semiconductor chip, an interposer substrate on the lower package and having a plurality of holes that penetrate the interposer substrate, a thermal radiation structure that includes a supporter on a top surface of the interposer substrate and a plurality of protrusions in the holes of the interposer substrate, and a thermal conductive layer between the lower semiconductor chip and the protrusions of the thermal radiation structure.

公开(公告)号：US11817401B2

公开(公告)日：2023-11-14

申请号：US17510749

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongho Kim ,  Jihwang Kim

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/73204

Abstract: A semiconductor package including a semiconductor chip, a lower redistribution layer under the semiconductor chip, the lower redistribution layer including a lower insulating layer at a central region and at a portion of an edge region, and a trench at a remaining portion of the edge region, a plurality of outer connecting terminals under the lower redistribution layer, a molding layer including a first molding section and the second molding section, the first molding section being on the lower redistribution layer and surrounding a side surface of the semiconductor chip and the second molding section being in the trench and contacting a side surface of the lower insulating layer, and an upper redistribution layer on the molding layer may be provided. The side surface of the lower insulating layer and a side surface of the second molding section may be coplanar with each other.

公开(公告)号：US20220140183A1

公开(公告)日：2022-05-05

申请号：US17197326

申请日：2021-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Jinjoo Park

IPC: H01L33/14 ,  H01L33/30 ,  H01L27/15 ,  H01L33/00

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

公开(公告)号：US10883874B2

公开(公告)日：2021-01-05

申请号：US16582550

申请日：2019-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IMEC VZW

Inventor： Seongho Cho ,  Tom Claes ,  Dongho Kim

IPC: G01J3/02 ,  G02B6/124 ,  G01N21/27 ,  G01J3/18 ,  G01N21/47 ,  A61B5/145 ,  A61B5/1455 ,  G01J3/26 ,  G01J3/36 ,  A61B5/00 ,  G02B6/10 ,  G02B6/27 ,  G01J3/12 ,  G02B6/34

Abstract: Provided are a dual coupler device configured to receive lights of different polarization components, a spectrometer including the dual coupler device, and a non-invasive biometric sensor including the spectrometer. The dual coupler device may include, for example, a first coupler layer configured to receive a light of a first polarization component among incident lights. and a second coupler layer configured to receive a light of a second polarization component among the incident lights, wherein a polarization direction of the light of the first polarization component is perpendicular to a polarization direction of the light of the second polarization component. The first coupler layer and the second coupler layer may be spaced apart from each other and extended along a direction in which the light propagates in the first coupler layer and the second coupler layer.

公开(公告)号：US10281328B2

公开(公告)日：2019-05-07

申请号：US15989386

申请日：2018-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IMEC VZW

Inventor： Dongho Kim ,  Jeonghwan Song

IPC: G01J3/18 ,  G02B5/18 ,  G02B6/124 ,  G02B6/293 ,  G02B6/02

Abstract: Provided are a Bragg grating and a spectroscopy device including the same. The Bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of the waveguide; a plurality of first refractive members protruding from the core member and spaced apart from each other along the lengthwise direction; and a second refractive member filling spaces between the first refractive members and having a refractive index different from a refractive index of the first refractive members.

公开(公告)号：US11776988B2

公开(公告)日：2023-10-03

申请号：US17227981

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Dongho Kim ,  Junghun Park ,  Jinjoo Park ,  Eunsung Lee ,  Joohun Han

IPC: H01L27/15

CPC classification number: H01L27/156

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US11728230B2

公开(公告)日：2023-08-15

申请号：US17350329

申请日：2021-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hwang Kim ,  Dongho Kim ,  Jin-Woo Park ,  Jongbo Shim

IPC: H01L23/13 ,  H01L25/10 ,  H01L25/00 ,  H01L21/48

CPC classification number: H01L23/13 ,  H01L21/4853 ,  H01L25/105 ,  H01L25/50 ,  H01L2225/1023 ,  H01L2225/1058

Abstract: A semiconductor package includes: a lower package: an upper substrate on the lower package: and connection members connecting the lower package to the upper substrate, wherein the lower package includes: a lower substrate; and a lower semiconductor chip, wherein the upper substrate includes: an upper substrate body: upper connection pads combined with the connection members: and auxiliary members extending from the upper substrate body toward the lower substrate, wherein the connection members are arranged in a first horizontal direction to form a first connection member column, wherein the auxiliary members are arranged in the first horizontal direction to form a first auxiliary member column, wherein the first connection member column and the first auxiliary member column are located between a side surface of the lower semiconductor chip and a side surface of the lower substrate, and the first auxiliary member column is spaced apart from the first connection member column.