公开(公告)号：US20190333435A1

公开(公告)日：2019-10-31

申请号：US16384821

申请日：2019-04-15

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Eok SHIN ,  Hong Sick PARK ,  Gyung Min BAEK ,  Sang Woo SOHN ,  Sang Won SHIN ,  Ju Hyun LEE

IPC: G09G3/20 ,  H01L51/52 ,  H01L27/32

Abstract: A display device may include a base and a first wiring layer disposed on the base. The first wiring layer may include a first material and a second material layer that overlap each other. A material of the second material layer may be different from a material of the first material layer. The second material layer contains MoOx, wherein 1.9≤x≤2.1.

公开(公告)号：US20190165083A1

公开(公告)日：2019-05-30

申请号：US16164796

申请日：2018-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Geol LEE ,  Kyeong Su KO ,  Sang Won SHIN ,  Dong Min LEE ,  Sang Gab KIM ,  Sang Woo SOHN ,  Hyun Eok SHIN ,  Shin Il CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A conductive pattern for a display device includes a first layer including aluminum or an aluminum alloy disposed on a substrate and forming a first taper angle with the substrate, and a second layer disposed on the first layer forming a second taper angle with the first layer, in which the second taper angle is smaller than the first taper angle.

公开(公告)号：US20160197190A1

公开(公告)日：2016-07-07

申请号：US14754213

申请日：2015-06-29

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Hee LEE ,  Sang Won SHIN ,  Hyun Ju KANG ,  Sang Woo SOHN ,  Chang Oh JEONG

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L27/12 ,  H01L29/40

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/401 ,  H01L29/78696

Abstract: Provided is a thin film transistor panel including: a substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; an oxide semiconductor positioned on the gate insulating layer and including an oxide layer; and a source electrode and a drain electrode positioned on the oxide semiconductor and facing each other based on a channel of the oxide semiconductor, in which the oxide layer overlaps the gate electrode and is positioned on the oxide semiconductor.

Abstract translation: 提供一种薄膜晶体管面板，包括：基板; 位于所述基板上的栅电极; 位于所述栅电极上的栅极绝缘层; 位于所述栅极绝缘层上且包括氧化物层的氧化物半导体; 以及位于所述氧化物半导体上的源电极和漏极，并且基于所述氧化物半导体的沟道彼此相对，所述氧化物层与所述栅电极重叠并位于所述氧化物半导体上。

公开(公告)号：US20140076714A1

公开(公告)日：2014-03-20

申请号：US13760758

申请日：2013-02-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin Ho HWANG ,  Do-Hyun KIM ,  Sang Won SHIN ,  Woo Song KIM ,  Chang-Oh JEONG

IPC: C23C14/35

CPC classification number: C23C14/352 ,  C23C14/0063 ,  C23C14/35 ,  C23C16/455 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

Abstract: A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.

Abstract translation: 溅射装置包括：溅射靶; 面向溅射靶的衬底支撑件，并且衬底被设置在衬底支撑件上; 位于所述基板支撑体上的所述溅射靶和所述基板之间的阳极掩模; 以及位于阳极掩模和溅射靶之间的气体分配构件，并且包括彼此分离的多个气体分配管。 每个气体分配管包括限定在其中的多个排放孔，并且气体被排出到被配置为接收溅射装置的真空室。

公开(公告)号：US20210020717A1

公开(公告)日：2021-01-21

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun KIM ,  Myoung Hwa KIM ,  Tae Sang KIM ,  Yeon Keon MOON ,  Joon Seok PARK ,  Sang Woo SOHN ,  Sang Won SHIN ,  Jun Hyung LIM ,  Hye Lim CHOI

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

公开(公告)号：US20190115369A1

公开(公告)日：2019-04-18

申请号：US16013410

申请日：2018-06-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Min LEE ,  Sang Won SHIN ,  Hyun Eok SHIN

IPC: H01L27/12 ,  H01L23/528 ,  H01L23/532 ,  H01L29/49 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L27/124 ,  H01L21/2855 ,  H01L21/7685 ,  H01L23/528 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53257 ,  H01L27/1222 ,  H01L27/1262 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78675

Abstract: A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiNx), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).

公开(公告)号：US20170179262A1

公开(公告)日：2017-06-22

申请号：US15446858

申请日：2017-03-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Dong Hee LEE ,  Gwang Min CHA ,  Sang Won SHIN ,  Sang Woo SOHN

IPC: H01L29/66 ,  H01L23/532 ,  H01L21/4763 ,  H01L27/12 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

公开(公告)号：US20160160340A1

公开(公告)日：2016-06-09

申请号：US14670403

申请日：2015-03-26

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju KANG ,  Sang Woo SOHN ,  Sang Won SHIN ,  Dong Hee LEE ,  Chang Oh JEONG

IPC: C23C14/04

CPC classification number: C23C14/044 ,  H01J37/34 ,  H01J37/3447

Abstract: The method of forming a layer using the sputtering device includes: placing a substrate within a chamber; depositing target particles emitted from a target, which faces the substrate, on the substrate using a sputtering process; and horizontally moving a plurality of shield rods, which are installed in a shield mask disposed between the substrate and the target and are separated from each other along a first direction, during the sputtering process.

Abstract translation: 使用溅射装置形成层的方法包括：将基板放置在室内; 使用溅射工艺将从面向衬底的靶发射的靶颗粒沉积在衬底上; 并且水平移动多个屏蔽杆，其安装在设置在基板和靶之间的屏蔽掩模中，并且在溅射过程期间沿着第一方向彼此分离。