公开(公告)号：US20140138671A1

公开(公告)日：2014-05-22

申请号：US13856851

申请日：2013-04-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Su LEE ,  Hyang-Shik Kong ,  Yoon-Ho Khang ,  Hyun-Jae NA ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969

Abstract: A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

Abstract translation: 显示基板包括基底基板，设置在基底基板上的数据线，与数据线交叉的栅极线，设置在基底基板上的第一绝缘层，设置在第一绝缘层上的有源图案， 氧化物半导体，连接到沟道的源电极和连接到沟道的漏电极，设置在有源图案上的第二绝缘层，并与源电极和漏电极接触;栅极，设置在第二绝缘层上 并且与沟道重叠，设置在栅电极和第二绝缘层上的钝化层以及通过形成在钝化层和第二绝缘层上的第一接触孔与漏电极电连接的像素电极。

公开(公告)号：US09991319B2

公开(公告)日：2018-06-05

申请号：US15377794

申请日：2016-12-13

Applicant: Samsung Display Co., Ltd

Inventor： Myoung-Geun Cha ,  Sang-Ho Park ,  Hyun-Jae Na ,  Yoon-Ho Khang ,  Dae-Ho Kim

IPC: H01L29/08 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

公开(公告)号：US09929191B2

公开(公告)日：2018-03-27

申请号：US15006295

申请日：2016-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/28

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

公开(公告)号：US09356153B2

公开(公告)日：2016-05-31

申请号：US14452261

申请日：2014-08-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yoon-Ho Khang ,  Dong-Jo Kim ,  Su-Hyoung Kang ,  Yong-Su Lee

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696

Abstract: A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.

Abstract translation: 薄膜晶体管包括底栅电极，顶栅电极和有源图案。 顶栅电极包括透明导电材料并与底栅电极重叠。 底栅电极的边界和顶栅电极的边界在横截面图中彼此重合。 有源图案包括源极部分，漏极部分和设置在源极部分和漏极部分之间的沟道部分。 沟道部分与底栅电极和顶栅电极重叠。

公开(公告)号：US20150206932A1

公开(公告)日：2015-07-23

申请号：US14558458

申请日：2014-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Sang-Ho Park ,  Hyun-Jae Na ,  Yoon-Ho Khang ,  Dae-Ho Kim

IPC: H01L27/32 ,  H01L29/786 ,  H01L21/477 ,  H01L21/443 ,  H01L21/461 ,  H01L27/12 ,  H01L29/45

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

Abstract translation: 公开了薄膜晶体管（TFT），制造TFT的方法和具有TFT的平板显示器。 在一个方面，TFT包括衬底和形成在衬底上的有源层，其中有源层由氧化物半导体形成，并且其中有源层包括两个相对的侧面。 TFT还包括形成在有源层的相对侧的源区和漏区，在有源层上形成的第一绝缘层，形成在有源层上的栅电极，形成为覆盖第一绝缘层和栅极的第二绝缘层 电极，以及形成在源区和漏区上并接触第二绝缘层的第一导电层。

公开(公告)号：US20150069378A1

公开(公告)日：2015-03-12

申请号：US14170202

申请日：2014-01-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Sang-Ho Park

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/127

Abstract: A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

Abstract translation: 薄膜晶体管（TFT）阵列基板包括在基板上的基板，栅电极，栅极线，第一数据线和第二数据线，覆盖栅电极和栅极线的栅极绝缘层， 暴露第一数据线的一部分的第一开口和暴露第二数据线的一部分的第二开口，设置在栅绝缘层上的有源层，使得有源层的至少一部分与栅电极重叠， 从有源层的相对侧延伸的漏电极和源电极，从漏极延伸的像素电极和从源电极延伸的连接布线，并且将第一数据线连接到第二数据线通过 栅极绝缘层的第一和第二开口。

公开(公告)号：US09921794B2

公开(公告)日：2018-03-20

申请号：US15015159

申请日：2016-02-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong-Chan Lee ,  So-Young Koo ,  Myoung-Geun Cha ,  Yoon-Ho Khang ,  Myoung-Hwa Kim ,  Woong-Hee Jeong

IPC: G06F3/14 ,  G09G3/20

CPC classification number: G06F3/1446 ,  G09G3/20 ,  G09G2300/026 ,  G09G2310/0232 ,  G09G2320/0233

Abstract: A blind display device includes a plurality of curved display panels, a support, and a plurality of rotators. Each of the curved display panels includes a curved display area between a flat display area and a bezel area. The support guides movement of the curved display panels. The rotators couple corresponding ones of the curved display panels to the support and rotate corresponding ones of the curved display panels.

公开(公告)号：US09882056B2

公开(公告)日：2018-01-30

申请号：US14939564

申请日：2015-11-12

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su Lee ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Su-Hyoung Kang

IPC: H01L29/786 ,  H01L29/43 ,  H01L29/66 ,  H01L29/417 ,  H01L29/45

CPC classification number: H01L29/78642 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/66666 ,  H01L29/6675 ,  H01L29/78606 ,  H01L29/7869

Abstract: A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

公开(公告)号：US09552998B2

公开(公告)日：2017-01-24

申请号：US14558458

申请日：2014-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung-Geun Cha ,  Sang-Ho Park ,  Hyun-Jae Na ,  Yoon-Ho Khang ,  Dae-Ho Kim

IPC: H01L29/08 ,  H01L21/477 ,  H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/3232 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

Abstract: A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

Abstract translation: 公开了薄膜晶体管（TFT），制造TFT的方法和具有TFT的平板显示器。 在一个方面，TFT包括衬底和形成在衬底上的有源层，其中有源层由氧化物半导体形成，并且其中有源层包括两个相对的侧面。 TFT还包括形成在有源层的相对侧的源极和漏极区域，在有源层上形成的第一绝缘层，形成在有源层上的栅电极，形成为覆盖第一绝缘层和栅极的第二绝缘层 电极，以及形成在源区和漏区上并接触第二绝缘层的第一导电层。

公开(公告)号：US09048322B2

公开(公告)日：2015-06-02

申请号：US13856851

申请日：2013-04-04

Applicant: Samsung Display Co., Ltd.

Inventor： Yong-Su Lee ,  Hyang-Shik Kong ,  Yoon-Ho Khang ,  Hyun-Jae Na ,  Se-Hwan Yu ,  Myoung-Geun Cha

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L29/7869 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969

Abstract: A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

Abstract translation: 显示基板包括基底基板，设置在基底基板上的数据线，与数据线交叉的栅极线，设置在基底基板上的第一绝缘层，设置在第一绝缘层上的有源图案， 氧化物半导体，连接到沟道的源电极和连接到沟道的漏电极，设置在有源图案上的第二绝缘层，并与源电极和漏电极接触;栅极，设置在第二绝缘层上 并且与沟道重叠，设置在栅电极和第二绝缘层上的钝化层以及通过形成在钝化层和第二绝缘层上的第一接触孔与漏电极电连接的像素电极。