Abstract:
A display device includes: a substrate; an inorganic insulating layer disposed on the substrate; a conductor disposed on the inorganic insulating layer; and an organic insulating layer disposed on the conductor, where an opening is defined through the organic insulating layer to expose a part of the upper surface of the conductor, and at least one material selected from a siloxane, a thiol, a phosphate, a disulfide including a sulfur series, and an amine is bonded on the part of the upper surface of the conductor exposed through the opening.
Abstract:
A polarization module and a laser exposure apparatus have a polarization module including a first lens and a second lens that reduce a one-directional length of a cross-section of an incident laser beam having an optical axis. A polarization beam splitter divides the laser beam passing through the first and second lenses into two laser beams that are polarized in different directions with respect to each other. A first prism lens and a second prism lens emit an output laser beam by controlling the two laser beams that are divided by the polarization beam splitter to positions that are symmetrical with respect to the optical axis. At least one half wave plate is disposed between the polarization beam splitter and the first prism lens.
Abstract:
A laser crystallization apparatus and an organic light-emitting diode (OLED) display manufactured using the same are disclosed. In one aspect, the apparatus includes a stage configured to receive a target substrate having an amorphous silicon layer formed thereon and a first laser unit configured to crystalize the amorphous silicon layer so as to form a polycrystalline silicon layer. The polycrystalline silicon layer includes a plurality of protrusions. The apparatus also includes a second laser unit configured to remove at least part of the protrusions.
Abstract:
A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.
Abstract:
A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.
Abstract:
A display device includes: a substrate; a first signal line and a second signal line disposed on the substrate; and an interlayer-insulating layer disposed between the first signal line and the second signal line. The interlayer-insulating layer includes a first portion and a second portion having different heights measured from a surface of the substrate along a first direction that is perpendicular to the surface of the substrate, an upper surface of the first portion of the interlayer-insulating layer is flat, a surface of the second portion of the interlayer-insulating layer is flat, a height of the first portion is lower than a height of the second portion, the interlayer-insulating layer defines a contact hole, and the contact hole is disposed in the first portion of the interlayer-insulating layer.
Abstract:
A display device includes a planarization layer covering transistors in a display area on a substrate, an organic light emitting diode on the planarization layer, a pad electrode in a non-display area on the substrate surrounding the display area, and a sacrificial layer remnant capping a side surface of the pad electrode.
Abstract:
A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.
Abstract:
In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.
Abstract:
In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.