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11.发明公开公开(公告)号：US20240057347A1
公开(公告)日：2024-02-15
申请号：US18348846
申请日：2023-07-07
Inventor： Wooyoung YANG , Hyungjun Kim , Hajun Sung , Kiyeon Yang , Changseung Lee , Changyup Park , Seung-min Chung , Sangyoon Lee , Inkyu Sohn
CPC classification number: H10B63/10 , H10N70/231 , H10N70/8822 , H10N70/826 , H10N70/828 , H10B63/20 , H10N70/023 , H10N70/8825
Abstract: A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.
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Patent Agency Ranking
公开(公告)号：US20240046986A1
公开(公告)日：2024-02-08
申请号：US18157408
申请日：2023-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minwoo CHOI , Young Jae Kang , Bonwon Koo , Yongyoung Park , Hajun Sung , Dongho Ahn , Kiyeon Yang , Wooyoung Yang , Changseung Lee
CPC classification number: G11C13/0069 , G11C13/0004 , H10B63/10 , G11C2213/30 , H10B63/84
Abstract: A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.
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13.发明公开公开(公告)号：US20230329007A1
公开(公告)日：2023-10-12
申请号：US18176750
申请日：2023-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hajun SUNG , Youngjae Kang , Bonwon Koo , Yongyoung Park , Dongho Ahn , Kiyeon Yang , Wooyoung Yang , Changseung Lee , Minwoo Choi
Abstract: A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.
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公开(公告)号：US11693237B2
公开(公告)日：2023-07-04
申请号：US17519347
申请日：2021-11-04
Inventor： Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
CPC classification number: G02B27/0025 , G02B1/002 , G02B3/02 , G02B5/0825
Abstract: A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
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公开(公告)号：US11262606B2
公开(公告)日：2022-03-01
申请号：US16857756
申请日：2020-04-24
Applicant: SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Inventor： Kiyeon Yang , Youngsun Choi , Seokho Song , Jaewoong Yoon , Choloong Han , Yongsung Kim , Jeongyub Lee , Changseung Lee
IPC: G02B6/26 , G02B6/12 , G02B1/04 , G02B6/27 , G02F1/09 , G02B6/293 , G02B6/42 , G02F1/095 , G02F1/31
Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.
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公开(公告)号：US11194153B2
公开(公告)日：2021-12-07
申请号：US16421857
申请日：2019-05-24
Inventor： Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
Abstract: Provided in a phase shifting device including a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
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