公开(公告)号：US20140064512A1

公开(公告)日：2014-03-06

申请号：US13975595

申请日：2013-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam YU ,  Minwoo OH ,  Byounghee LEE ,  Jaekyu LEE

IPC: H04R1/10

CPC classification number: H04R1/1041 ,  H01R24/58 ,  H04M1/6058 ,  H04M1/72527 ,  H04R2201/107 ,  H04R2420/05 ,  H04R2420/09

Abstract: An earphone connection interface, a terminal including the same, and a method of operating the terminal are provided. The earphone connection interface includes: a terminal left terminal, a terminal right terminal, a terminal ground terminal, an earphone detection terminal, and a terminal microphone terminal disposed sequentially along an inner wall of a cylindrical groove and an ear microphone bias voltage source electrically connected to the terminal microphone terminal; and a capacitor electrically connected to the terminal microphone terminal through a switch element.

Abstract translation: 提供耳机连接接口，包括其的终端以及操作终端的方法。 耳机连接接口包括：端子左端子，端子右端子，端子接地端子，耳机检测端子和沿着圆柱形槽的内壁顺序布置的端子麦克风端子和耳麦克风偏置电压源电连接 到终端话筒终端; 以及通过开关元件电连接到终端麦克风端子的电容器。

公开(公告)号：US20240194717A1

公开(公告)日：2024-06-13

申请号：US18494156

申请日：2023-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaekyu LEE ,  Changyong UM ,  Dongseok CHO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645

Abstract: An image sensor includes a photoelectric conversion element in a first semiconductor substrate, a second semiconductor substrate on the first semiconductor substrate, a source follower transistor on the second semiconductor substrate, and a through-plug penetrating the second semiconductor substrate. The through-plug electrically connects the photoelectric conversion element to the source follower transistor. A source terminal of the source follower transistor is electrically connected to the second semiconductor substrate.

公开(公告)号：US20240047493A1

公开(公告)日：2024-02-08

申请号：US18216211

申请日：2023-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekyu LEE ,  Jeongjin Lee ,  Dongseok Cho

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14612

Abstract: An image sensor includes a first substrate including an analog block and a digital block, an isolation structure extending through the first substrate and dividing the analog block from the digital block, a first transistor on the digital block, a second transistor on the analog block, a wiring on and electrically connected to the second transistor, a second substrate on the wiring, a color filter array layer on the second substrate and including color filters, a microlens on the color filter array layer, a light sensing element in the second substrate, a transfer gate (TG) extending through a lower portion of the second substrate adjacent to the light sensing element, and a floating diffusion (FD) region at a lower portion of the second substrate adjacent to the TG and electrically connected to the wiring.

公开(公告)号：US20220077237A1

公开(公告)日：2022-03-10

申请号：US17386821

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan LEE ,  Jaekyu LEE

IPC: H01L27/30

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first transmission gate electrode on the first surface of the substrate, a storage node on the first surface of the substrate and including a first storage gate electrode isolated from direct contact with the first transmission gate electrode, a dielectric layer on the first storage gate electrode, and a semiconductor layer on the dielectric layer. The image sensor may include a first cover insulating layer on the semiconductor layer and vertically overlapping the first transmission gate electrode, and an organic photoelectric conversion layer on an upper surface of the semiconductor layer and an upper surface of the first cover insulating layer.

公开(公告)号：US20140322888A1

公开(公告)日：2014-10-30

申请号：US14328056

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun HONG ,  Jaekyu LEE ,  Yong Kwan KIM

IPC: H01L45/00

CPC classification number: H01L45/1683 ,  H01L27/101 ,  H01L27/224 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1273 ,  H01L45/1608 ,  H01L45/1675

Abstract: According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top of the first sub lower electrode. The lower electrode includes an upward-tapered shape.

Abstract translation: 根据示例性实施例，可变电阻存储器件包括下电极，其包括间隔物形的第一副下电极和覆盖第一副下电极的弯曲侧壁的第二副下电极。 第二副下电极向上延伸以突出在第一子下电极的顶部之上。 下电极包括向上锥形的形状。

公开(公告)号：US20140106535A1

公开(公告)日：2014-04-17

申请号：US14134008

申请日：2013-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaekyu LEE ,  Kiseok SUH ,  Tae Eung YOON

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1691 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1641

Abstract: A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.

Abstract translation: 存储器件包括半导体衬底中的下互连，下互连由不同于半导体衬底的材料制成，下互连上的选择元件以及选择元件上的存储元件。