公开(公告)号：US20140322888A1

公开(公告)日：2014-10-30

申请号：US14328056

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun HONG ,  Jaekyu LEE ,  Yong Kwan KIM

IPC: H01L45/00

CPC classification number: H01L45/1683 ,  H01L27/101 ,  H01L27/224 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1273 ,  H01L45/1608 ,  H01L45/1675

Abstract: According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top of the first sub lower electrode. The lower electrode includes an upward-tapered shape.

Abstract translation: 根据示例性实施例，可变电阻存储器件包括下电极，其包括间隔物形的第一副下电极和覆盖第一副下电极的弯曲侧壁的第二副下电极。 第二副下电极向上延伸以突出在第一子下电极的顶部之上。 下电极包括向上锥形的形状。