公开(公告)号：US20160225815A1

公开(公告)日：2016-08-04

申请号：US14973855

申请日：2015-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyong UM ,  Youngwoo JUNG ,  Jungchak AHN

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14818 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a substrate with a unit pixel defined by a first separation pattern, a photoelectric conversion part in the substrate, a photocharge storage in the substrate, the photocharge storage being adjacent to the photoelectric conversion part, a second separation pattern between the photoelectric conversion part and the photocharge storage, a shielding part on a bottom surface of the substrate to cover the photocharge storage, the shielding part including a first protrusion extending into the substrate and toward the first separation pattern, and an extension extending from the first protrusion to cover the bottom surface of the substrate; and an anti-reflection layer between the shielding part and the substrate, the anti-reflection layer having an overhang structure between the first protrusion and the extension.

Abstract translation: 图像传感器包括具有由第一分离图案限定的单位像素的基板，基板中的光电转换部，基板中的光电荷存储部，与光电转换部相邻的光电荷存储部，光电转换部之间的第二分离图案 转换部分和光电荷存储器，覆盖光电荷存储器的基板的底表面上的屏蔽部分，所述屏蔽部分包括延伸到基板中并朝向第一分离图案的第一突起，以及从第一突起到第 覆盖基板的底面; 以及在所述屏蔽部和所述基板之间的防反射层，所述防反射层在所述第一突起和所述延伸部之间具有突出结构。

公开(公告)号：US20230163151A1

公开(公告)日：2023-05-25

申请号：US17897775

申请日：2022-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyong UM

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor may include a first substrate having first and second surfaces opposite to each other and including a floating diffusion region provided near the first surface, a second substrate provided on the first surface of the first substrate, an intermediate substrate disposed between the first and second substrates, a first transistor disposed on a bottom surface of the intermediate substrate, a contact pattern electrically connecting the first transistor to the floating diffusion region, an upper interconnection layer provided on a bottom surface of the intermediate substrate, a lower interconnection layer between the upper interconnection layer and the second substrate, conductive pads electrically connecting the upper and lower interconnection layers, and a capacitor disposed on the second substrate. The contact pattern may penetrate the intermediate substrate and may be in contact with the floating diffusion region. The capacitor may be closer to the second substrate than the conductive pads.

公开(公告)号：US20240170530A1

公开(公告)日：2024-05-23

申请号：US18387702

申请日：2023-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu BAEK ,  Changyong UM ,  Kwansik KIM ,  Jungsan KIM ,  Taemin KIM

IPC: H01G15/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06

CPC classification number: H01L28/75 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/90

Abstract: An integrated circuit device, including a substrate; a lower insulating film; and a capacitor structure including: a plurality of first conductive patterns sequentially stacked on the lower insulating film; a plurality of second conductive patterns on the plurality of first conductive patterns; a first via at a first side of the capacitor structure, wherein the first via physically contacts and is electrically connected to the plurality of first conductive patterns, and is not electrically connected to the plurality of second conductive patterns; and a second via at a second side of the capacitor structure, wherein the second via physically contacts and is electrically connected to the plurality of second conductive patterns, and is not electrically connected to the plurality of first conductive patterns.

公开(公告)号：US20230197755A1

公开(公告)日：2023-06-22

申请号：US17965268

申请日：2022-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changyong UM ,  Jeongsoon KANG ,  Jeongjin LEE

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14634 ,  H01L24/08 ,  H01L27/14636 ,  H01L24/80 ,  H01L27/1469 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: An image sensor may include a lower device on a lower substrate, an intermediate device on an intermediate substrate on the lower substrate, and an upper device on an upper substrate on the intermediate substrate. The lower device may include a logic transistor. The intermediate device may include at least one transistor. The upper device may include a photodiode and a floating diffusion region. The lower substrate, the intermediate substrate and the upper substrate may be stacked. The intermediate substrate may include a stack of a first semiconductor layer, a silicon oxide layer, and a second semiconductor layer pattern. An insulation pattern fills an opening at least partially defined by one or more inner surfaces of the first semiconductor layer. A buried insulation pattern fills a trench extending through the second semiconductor layer pattern.

公开(公告)号：US20240379722A1

公开(公告)日：2024-11-14

申请号：US18520934

申请日：2023-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyong UM

IPC: H01L27/146

Abstract: A semiconductor device, including a gate electrode, a first region under the gate electrode and extending from a first direction to a second direction crossing the first direction, the first region having a bent shape, a first source-drain region extending from one end of the first region, a second source-drain region extending from an opposite end of the first region, and a third source-drain region at a point where a first virtual straight line extending from the first source-drain region in the first direction and a second virtual straight line extending from the second source-drain region in a direction opposite to the second direction cross each other in the first region, wherein the third source-drain region forms a first channel region together with the first source-drain region and forms a second channel region together with the second source-drain region.

公开(公告)号：US20240194717A1

公开(公告)日：2024-06-13

申请号：US18494156

申请日：2023-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaekyu LEE ,  Changyong UM ,  Dongseok CHO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645

Abstract: An image sensor includes a photoelectric conversion element in a first semiconductor substrate, a second semiconductor substrate on the first semiconductor substrate, a source follower transistor on the second semiconductor substrate, and a through-plug penetrating the second semiconductor substrate. The through-plug electrically connects the photoelectric conversion element to the source follower transistor. A source terminal of the source follower transistor is electrically connected to the second semiconductor substrate.