公开(公告)号：US11025844B2

公开(公告)日：2021-06-01

申请号：US16674202

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Seungsik Kim ,  Jungchak Ahn ,  Jaekyu Lee ,  Dongmo Im ,  Dongseok Cho

IPC: H04N5/355

Abstract: A method of driving an image sensor includes integrating an overflowed charge from a photodiode in the floating diffusion area and a dynamic range capacitor. The dynamic range capacitor is formed between the floating diffusion area and a power supply voltage. The method further includes sampling a first voltage formed in the floating diffusion area by the integrated overflowed charge, resetting the photodiode, the floating diffusion area, and the dynamic range capacitor, sampling a reset level of the reset floating diffusion area, transferring a charge accumulated in the photodiode to the floating diffusion area, and sampling a second voltage formed in the floating diffusion area.

公开(公告)号：US20240038792A1

公开(公告)日：2024-02-01

申请号：US18482923

申请日：2023-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongseok Cho ,  Jongeun Park ,  Jeongsoon Kang ,  Gyunha Park ,  Gwideok Ryan Lee

IPC: H01L27/146 ,  H04N25/79 ,  H04N25/77 ,  H04N25/78

CPC classification number: H01L27/1461 ,  H04N25/79 ,  H04N25/77 ,  H04N25/78 ,  H01L27/14645

Abstract: The stacked image sensor includes a first semiconductor substrate and including a photoelectric conversion region and a floating diffusion area, a first insulating layer under the first semiconductor substrate and including a gate of a transfer transistor, a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, and a second insulating layer under the second semiconductor substrate and including a metal pad of a floating diffusion node and a gate of a source follower transistor, wherein the floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is in the first insulating layer and the second semiconductor substrate. The second semiconductor substrate further includes a well region. At least a portion of deep contact may be in the well region. The well region may surround the deep contact.

公开(公告)号：US20240321930A1

公开(公告)日：2024-09-26

申请号：US18612450

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongsoon Kang ,  Gyunha Park ,  Daehoon Kim ,  Jongeun Park ,  Gwideokryan Lee ,  Dongseok Cho

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627

Abstract: Provided is an image sensor including a first substrate including a first surface to which light is incident and a second surface opposite the first surface, a second substrate facing the second surface of the first substrate, a wiring layer between the first substrate and the second substrate and including an insulating layer and a conductive structure in the insulating layer, a first floating diffusion region provided in the first substrate, a first through electrode penetrating through the second substrate and electrically connected to the first floating diffusion region through the conductive structure, a second floating diffusion region provided in the second substrate, and a landing pad arranged on a bottom surface of the second substrate and electrically connected to the second floating diffusion region, wherein a bottom surface of the first through electrode may be in contact with the landing pad.

公开(公告)号：US20240047493A1

公开(公告)日：2024-02-08

申请号：US18216211

申请日：2023-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekyu LEE ,  Jeongjin Lee ,  Dongseok Cho

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14612

Abstract: An image sensor includes a first substrate including an analog block and a digital block, an isolation structure extending through the first substrate and dividing the analog block from the digital block, a first transistor on the digital block, a second transistor on the analog block, a wiring on and electrically connected to the second transistor, a second substrate on the wiring, a color filter array layer on the second substrate and including color filters, a microlens on the color filter array layer, a light sensing element in the second substrate, a transfer gate (TG) extending through a lower portion of the second substrate adjacent to the light sensing element, and a floating diffusion (FD) region at a lower portion of the second substrate adjacent to the TG and electrically connected to the wiring.