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公开(公告)号：US20250126885A1
公开(公告)日：2025-04-17
申请号：US18913192
申请日：2024-10-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minsu SEOL , Kyung-Eun BYUN , Changhyun KIM , Eunkyu LEE
IPC: H01L27/092 , H01L21/762 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786
Abstract: A semiconductor device includes a dielectric wall provided in a direction perpendicular to a substrate, a first metal oxide field effect transistor (MOSFET) provided on one side surface of the dielectric wall, a second MOSFET provided above the first MOSFET in a direction perpendicular to the substrate, and a third MOSFET provided in parallel with the first MOSFET on the other side surface of the dielectric wall.
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公开(公告)号：US20240178144A1
公开(公告)日：2024-05-30
申请号：US18521994
申请日：2023-11-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunwook SHIN , Hyeonjin SHIN , Sangwon KIM , Changhyun KIM , Baekwon PARK , Kyung-Eun BYUN
IPC: H01L23/532
CPC classification number: H01L23/53276 , H01L23/53295
Abstract: An interconnect structure may include a first dielectric layer including a trench, a first conductive layer in the trench and including a plurality of first graphene layers stacked in a direction from an inner surface of the trench toward a center of the trench, a second dielectric layer on the first dielectric layer and including a through hole extending to the trench, and a second conductive layer in the through hole.
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公开(公告)号：US20230180993A1
公开(公告)日：2023-06-15
申请号：US18076708
申请日：2022-12-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Johannes BÜSING , Jongwook KWON , Kyuha LEE , Changhyun KIM , Sungsan KIM , Joowan NAM , Woojin SHIN
CPC classification number: A47L15/486 , A47L15/4287 , A47L15/507
Abstract: A dishwasher includes: a tub including a washing room; and a dryer installed on one side of the tub, the dryer including: a first housing coupled with the tub and communicating with the washing room; a second housing coupled with an other side of the first housing, and forming a flow path together with the first housing so that inside air of the washing room circulates back to the washing room by passing through the flow path; a heater accommodated inside the first housing and the second housing to heat the air passing through the flow path; and a switch module positioned upstream of the heater, configured to detect an inside temperature of the flow path to turn on or off the heater based on the detected inside temperature, and fixed between the first housing and the second housing by coupling of the first housing with the second housing.
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公开(公告)号：US20230114347A1
公开(公告)日：2023-04-13
申请号：US18063909
申请日：2022-12-09
Inventor： Changhyun KIM , Sang-Woo Kim , Kyung-Eun BYUN , Hyeonjin SHIN , Ahrum SOHN , Jaehwan JUNG
IPC: H01L21/02
Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.
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公开(公告)号：US20230038735A1
公开(公告)日：2023-02-09
申请号：US17970947
申请日：2022-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jisook LEE , Changhyun KIM , Hyunjoo KIM , Hosang PARK , Eungryeol SEO , Wonjae YOON
Abstract: A modular refrigerator including a main cabinet, and a sub-cabinet selectively coupleable to a right side, an upper side, and a left side, of the main cabinet. The main cabinet includes a cooling unit, a first connection duct for cold air generated by the cooling unit to flow toward the right side, a second connection duct for the cold air to flow toward the upper side, and a third connection duct for the cold air to flow toward the left side. The sub-cabinet includes a first branch duct that, when the sub-cabinet is coupled to the right side, communicates with the first connection duct, a second branch duct that, when the sub-cabinet is coupled to the upper side, communicates with the second connection duct, and a third branch duct that, when the sub-cabinet is coupled to the left side, communicates with third connection duct.
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Patent Agency Ranking
公开(公告)号：US20210355582A1
公开(公告)日：2021-11-18
申请号：US17318238
申请日：2021-05-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeonjin SHIN , Sangwon KIM , Kyung-Eun BYUN , Eunkyu LEE , Changhyun KIM , Changseok LEE
IPC: C23C16/50 , C23C16/26 , C23C16/32 , C01B32/182 , C01B21/064 , C01B25/00
Abstract: Provided are a conductive structure and a method of controlling a work function of metal. The conductive structure includes a conductive material layer including metal and a work function control layer for controlling a work function of the conductive structure by being bonded to the conductive material layer. The work function control layer includes a two-dimensional material with a defect.
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公开(公告)号：US20210313169A1
公开(公告)日：2021-10-07
申请号：US17208216
申请日：2021-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunjae SONG , Kaoru YAMAMOTO , Changhyun KIM , Shuji MORIYA , Jungsoo YOON , Soyoung LEE , Changseok LEE
IPC: H01L21/02 , H01L21/428 , H01L21/3213 , H01J37/32
Abstract: Provided are apparatuses for manufacturing semiconductor devices. An apparatus includes a reaction chamber having a stage to be loaded on a substrate, wherein set plasma is formed over the stage, a plurality of gas supply lines connected to the reaction chamber, flow controllers formed on the plurality of gas supply lines, respectively, to control the amount of a gas supplied to the reaction chamber, and a gas splitter configured to supply a mixed gas to the flow controllers. The apparatus may be a thin film deposition apparatus using plasma and further include a flow control unit connected to the gas splitter and a gas supply source connected to the flow control unit.
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公开(公告)号：US20210146476A1
公开(公告)日：2021-05-20
申请号：US16906410
申请日：2020-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngchul KWON , Changhyun KIM , Byoungho LEE , Jangwoon SUNG , Junhyeok JANG , Chulsoo CHOI , Manhee HAN
IPC: B23K26/06 , B23K26/073
Abstract: A stealth dicing apparatus may include a laser light source, and a linearly focusing lens configured to linearly focus a beam output from the laser light source. The linearly focusing lens includes a horizontal surface, and an inclined surface forming an inclination angle with the horizontal surface. The inclination angle satisfies an expression 34.97R2−146.6R+162.5
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公开(公告)号：US20180232585A1
公开(公告)日：2018-08-16
申请号：US15708978
申请日：2017-09-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhyun KIM
CPC classification number: G06K9/00825 , B60W2420/42 , G05D1/0088 , G05D1/0246 , G05D2201/0213 , G06K9/00798 , G06K9/00805 , G06K2209/23 , G06N3/0445 , G06N3/0454 , G06N3/08 , G06T2207/30256 , G08G1/167
Abstract: A processor implemented vehicle control method for autonomous driving includes: obtaining a driving image of a vehicle; determining a control parameter for controlling the vehicle in response to a driving situation of the vehicle by applying the driving image to a neural network; and transmitting the control parameter to an electronic control unit (ECU) of the vehicle for controlling the vehicle to drive autonomously, wherein the neural network comprises first layers in a convolutional structure and second layers in a recurrent structure, the driving image is applied to a first layer among the first layers, a last layer among the first layers is connected with a first layer among the second layers, and the control parameter is output from a last layer among the second layers.
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公开(公告)号：US20180052457A1
公开(公告)日：2018-02-22
申请号：US15440138
申请日：2017-02-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhyun KIM , Hyoa KANG , Changwoo SHIN , Baek Hwan CHO , Derek Daehyun JI
CPC classification number: G05D1/0055 , G05D1/0251 , G05D2201/0213 , G06K9/00791 , G06T7/593 , G06T7/596 , G06T2207/10021 , G06T2207/10028 , G06T2207/10048 , G06T2207/30252 , H04N13/128 , H04N13/239 , H04N13/243 , H04N13/296 , H04N2013/0081
Abstract: Disclosed is a stereo camera-based autonomous driving method and apparatus, the method including estimating a driving situation of a vehicle, determining a parameter to control a stereo camera width of a stereo camera based on the estimated driving situation, controlling a capturer configured to control arrangement between two cameras of the stereo camera for a first direction based on the determined parameter, and measuring a depth of an object located in the first direction based on two images respectively captured by the two cameras with the controlled arrangement.
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