公开(公告)号：US20240157472A1

公开(公告)日：2024-05-16

申请号：US18507459

申请日：2023-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul KWON ,  Goonwoo KIM

IPC: B23K26/0622 ,  B23K26/53 ,  H01L21/67

CPC classification number: B23K26/0622 ,  B23K26/53 ,  H01L21/67092 ,  B23K2101/40

Abstract: Provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the laser source sets parameters of the laser beam so that the laser beam is collected inside the wafer by a self-condensing phenomenon while moving along the inside of the wafer.

公开(公告)号：US20230187235A1

公开(公告)日：2023-06-15

申请号：US18073980

申请日：2022-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Akinori OKUBO ,  Youngchul KWON ,  Sungho JANG ,  Jungchul LEE ,  Deoksuk JANG

IPC: H01L21/67 ,  G02B27/09 ,  G02B27/00 ,  B23K26/53

CPC classification number: H01L21/67092 ,  G02B27/0927 ,  G02B27/0081 ,  B23K26/53 ,  G02B19/0047

Abstract: A stealth dicing laser device including: a pulse laser generator configured to generate laser light; a condenser lens formed in an optical path of the laser light; a pupil filter configured to transform a phase of the laser light before the laser light passes through the condenser lens; and a controller configured to provide a phase control signal to the pupil filter, wherein the pupil filter transforms the phase of the laser light based on the phase control signal, wherein the phase control signal is a signal transforming a phase expression of the laser light based on a parameter.

公开(公告)号：US20240290658A1

公开(公告)日：2024-08-29

申请号：US18496531

申请日：2023-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngchul KWON ,  Jimin KIM

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/268

Abstract: Provided is a method of dicing a wafer, the method including preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions, forming a plurality of semiconductor devices in the plurality of device formation regions of the wafer, irradiating a first laser beam and a second laser beam of a wavelength different from the first laser beam along the scribe lane region to form a plurality of internal cracks in the wafer, and separating the plurality of semiconductor devices along the plurality of internal cracks, wherein the first laser beam includes a plurality of pulses sequentially emitted from a laser apparatus, and the second laser beam is continuous wave light emitted from the laser apparatus.

公开(公告)号：US20210146476A1

公开(公告)日：2021-05-20

申请号：US16906410

申请日：2020-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul KWON ,  Changhyun KIM ,  Byoungho LEE ,  Jangwoon SUNG ,  Junhyeok JANG ,  Chulsoo CHOI ,  Manhee HAN

IPC: B23K26/06 ,  B23K26/073

Abstract: A stealth dicing apparatus may include a laser light source, and a linearly focusing lens configured to linearly focus a beam output from the laser light source. The linearly focusing lens includes a horizontal surface, and an inclined surface forming an inclination angle with the horizontal surface. The inclination angle satisfies an expression 34.97R2−146.6R+162.5