知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

21 records (took 0.022 seconds)

    MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING
    11.
    发明申请
    MAGNETIC FIELD ENHANCING BACKING PLATE FOR MRAM WAFER TESTING 审中-公开
    用于MRAM波形测试的磁场增强背板

    公开(公告)号：US20170059669A1

    公开(公告)日：2017-03-02

    申请号：US14836860

    申请日：2015-08-26

    Applicant: QUALCOMM Incorporated

    Inventor： Jimmy Kan ,  Matthias Georg Gottwald ,  Chando Park ,  Seung Hyuk Kang

    IPC: G01R33/12 ,  G11C11/16 ,  G11C29/04

    CPC classification number: G01R33/1207 ,  G11C11/16 ,  G11C29/006 ,  G11C29/04 ,  G11C29/56016 ,  G11C2029/1206 ,  G11C2029/5002 ,  G11C2029/5602

    Abstract: A method and apparatus for testing a magnetic memory device is provided. The method begins when a magnetic field enhancing backing plate is installed in the test fixture. The magnetic field enhancing backing plate may be installed in the wafer chuck of a wafer testing probe station. The magnetic memory device is installed in the test fixture and a magnetic field is applied to the magnetic memory device. The magnetic field may be applied in-plane or perpendicular to the magnetic memory device. The performance of the magnetic memory device may be determined based on the magnetic field applied to the device. The apparatus includes a magnetic field enhancing backing plate adapted to fit a test fixture, possibly in the wafer chuck. The magnetic field enhancing backing plate is fabricated of high permeability magnetic materials, such as low carbon steel, with a thickness based on the magnetic field used in testing.

    Abstract translation: 提供一种用于测试磁存储器件的方法和装置。 当将磁场增强背板安装在测试夹具中时，该方法开始。 磁场增强背板可以安装在晶片测试探针台的晶片卡盘中。 磁存储器件安装在测试夹具中，磁场被施加到磁存储器件。 磁场可以面向或垂直于磁存储器件施加。 磁存储器件的性能可以基于施加到器件的磁场来确定。 该装置包括适于装配测试夹具（可能在晶片卡盘中）的磁场增强背板。 磁场增强背板由高磁导率磁性材料（如低碳钢）制成，厚度基于测试中使用的磁场。

    Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)
    13.
    发明授权
    Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) 有权
    用于垂直磁隧道结的合成反铁磁体（SAF）耦合自由层（P-MTJ）

    公开(公告)号：US09548446B2

    公开(公告)日：2017-01-17

    申请号：US15133018

    申请日：2016-04-19

    Applicant: QUALCOMM Incorporated

    Inventor： Chando Park ,  Matthias Georg Gottwald ,  Kangho Lee ,  Seung Hyuk Kang

    IPC: H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

    Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。

    Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)
    14.
    发明授权
    Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) 有权
    用于垂直磁隧道结的合成反铁磁体（SAF）耦合自由层（p-MTJ）

    公开(公告)号：US09324939B2

    公开(公告)日：2016-04-26

    申请号：US14321516

    申请日：2014-07-01

    Applicant: QUALCOMM Incorporated

    Inventor： Chando Park ,  Matthias Georg Gottwald ,  Kangho Lee ,  Seung Hyuk Kang

    IPC: H01L29/82 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

    Abstract translation: 提供磁阻随机存取存储器（MRAM）中的磁隧道结（MTJ）器件及其制造方法，以实现高隧道磁阻（TMR），高垂直磁各向异性（PMA），良好的数据保留和 高水平的热稳定性。 MTJ装置包括第一自由铁磁层，合成反铁磁（SAF）耦合层和第二自由铁磁层，其中第一和第二自由铁磁层具有相反的磁矩。

    Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer
    17.
    发明授权
    Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer 有权
    垂直磁性隧道结（pMTJ）器件采用薄的钉扎层堆叠，并提供了一个向上反向平行（AP）层下方的体心立方（BCC）结晶/非晶结构的转变开始

    公开(公告)号：US09590010B1

    公开(公告)日：2017-03-07

    申请号：US15079634

    申请日：2016-03-24

    Applicant: QUALCOMM Incorporated

    Inventor： Matthias Georg Gottwald ,  Jimmy Jianan Kan ,  Chando Park ,  Xiaochun Zhu ,  Seung Hyuk Kang

    IPC: H01L29/66 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

    CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L27/11582 ,  H01L28/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: Perpendicular magnetic tunnel junction (pMTJ) devices employing a pinned layer stack with a thin top anti-parallel (AP2) layer and having a transitioning layer providing a transitioning start to a body-centered cubic (BCC) crystalline/amorphous structure below the top anti-parallel (AP2) layer, to promote a high tunnel magnetoresistance ratio (TMR) with reduced pinned layer thickness are disclosed. A first anti-parallel (AP) ferromagnetic (AP1) layer in a pinned layer has a face-centered cubic (FCC) or hexagonal closed packed (HCP) crystalline structure. A transitioning material (e.g., Iron (Fe)) is provided in a transitioning layer between the AP1 layer and an AFC layer (e.g., Chromium (Cr)) that starts a transition from a FCC or HCP crystalline structure, to a BCC crystalline/amorphous structure. In this manner, a second AP ferromagnetic (AP2) layer disposed on the AFC layer can be provided in a reduced thickness BCC crystalline or amorphous structure to provide a high TMR with a reduced pinned layer thickness.

    Abstract translation: 垂直磁性隧道结（pMTJ）器件采用具有薄顶部反平行（AP2）层的钉扎层叠层，并且具有向顶部抗反射平面（AP2）层下方的体心立方（BCC）结晶/非晶结构提供过渡开始的过渡层 公开了平行（AP2）层，以促进具有减小的钉扎层厚度的高隧道磁阻比（TMR）。 固定层中的第一反平行（AP）铁磁（AP1）层具有面心立方（FCC）或六边形封闭（HCP）晶体结构。 在AP1层和开始从FCC或HCP晶体结构的转变到BCC晶体/晶体的AFC层（例如，铬（Cr））之间的过渡层中提供了转变材料（例如，铁（Fe） 无定形结构。 以这种方式，设置在AFC层上的第二AP铁磁（AP2）层可以以减小的厚度BCC晶体或非晶结构提供，以提供具有减小的钉扎层厚度的高TMR。

Patent Agency Ranking