公开(公告)号：US20170186942A1

公开(公告)日：2017-06-29

申请号：US15458641

申请日：2017-03-14

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

公开(公告)号：US20160276581A1

公开(公告)日：2016-09-22

申请号：US15169603

申请日：2016-05-31

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

公开(公告)号：US20160043304A1

公开(公告)日：2016-02-11

申请号：US14454509

申请日：2014-08-07

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan CHEN ,  Xiaochun ZHU ,  Xia LI ,  Yu LU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.

Abstract translation: 垂直磁隧道结（pMTJ）器件包括垂直参考层，垂直参考层表面上的隧道势垒层和隧道势垒层表面上的垂直自由层。 pMTJ器件还包括在隧道势垒层上的电介质钝化层并围绕垂直自由层。 pMTJ器件还包括介电钝化层上的高磁导率材料，其被配置为由垂直参考层磁化，并且向垂直自由层提供杂散场，该杂散场补偿来自垂直参考层的杂散场。

公开(公告)号：US20190288187A1

公开(公告)日：2019-09-19

申请号：US16431490

申请日：2019-06-04

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Jimmy Jianan KAN ,  Peiyuan WANG ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01F10/32 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08

Abstract: A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.

公开(公告)号：US20160284988A1

公开(公告)日：2016-09-29

申请号：US15173567

申请日：2016-06-03

Applicant: QUALCOMM INCORPORATED

Inventor： Matthias Georg GOTTWALD ,  Jimmy KAN ,  Kangho LEE ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: A method for fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes growing a seed layer on a first electrode of the pMTJ device. The seed layer has a uniform predetermined crystal orientation along a growth axis. The method also includes planarizing the seed layer while maintaining the uniform predetermined crystal orientation of the seed layer.

公开(公告)号：US20160005955A1

公开(公告)日：2016-01-07

申请号：US14321516

申请日：2014-07-01

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Matthias Georg GOTTWALD ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device in a magnetoresistive random access memory (MRAM) and method of making the same are provided to achieve a high tunneling magnetoresistance (TMR), a high perpendicular magnetic anisotropy (PMA), good data retention, and a high level of thermal stability. The MTJ device includes a first free ferromagnetic layer, a synthetic antiferromagnetic (SAF) coupling layer, and a second free ferromagnetic layer, where the first and second free ferromagnetic layers have opposite magnetic moments.

公开(公告)号：US20150311429A1

公开(公告)日：2015-10-29

申请号：US14795799

申请日：2015-07-09

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Kangho LEE ,  Wei-Chuan CHEN ,  Yu LU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

Abstract translation: 提供了一种改进的磁性隧道结装置和用于制造改进的磁性隧道结装置的方法。 所提供的双蚀刻工艺减少蚀刻损伤和烧蚀材料再沉积。 在一个实例中，提供了一种用于制造磁性隧道结（MTJ）的方法。 该方法包括在衬底上形成缓冲层，在衬底上形成底电极，在底电极上形成引脚层，在引脚层上形成阻挡层，并在阻挡层上形成自由层。 第一蚀刻包括蚀刻自由层，而不蚀刻阻挡层，引脚层和底部电极。 该方法还包括在自由层上形成顶部电极，以及在顶部电极上形成硬掩模层。 第二蚀刻包括蚀刻硬掩模层; 顶部电极层，阻挡层，针层和底部电极。

公开(公告)号：US20150287910A1

公开(公告)日：2015-10-08

申请号：US14243324

申请日：2014-04-02

Applicant: QUALCOMM Incorporated

Inventor： Yu LU ,  Chando PARK ,  Wei-Chuan CHEN

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08

Abstract: A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask.

Abstract translation: 用于制造磁性隧道结（MTJ）装置的多步骤蚀刻技术包括在第一蚀刻步骤中在MTJ装置的第一电极上形成第一导电硬掩模以蚀刻第一电极。 该方法还包括在第一导电硬掩模上形成第二导电硬掩模，用于在第二蚀刻步骤期间蚀刻MTJ装置的磁性层。 间隔层共形沉积在第一导电硬掩模的侧壁上。 第二导电硬掩模沉积在第一导电硬掩模上并与第一导电硬掩模的侧壁上的间隔层对准。

公开(公告)号：US20150280112A1

公开(公告)日：2015-10-01

申请号：US14229427

申请日：2014-03-28

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Kangho LEE ,  Wei-Chuan CHEN ,  Yu LU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

公开(公告)号：US20150171316A1

公开(公告)日：2015-06-18

申请号：US14109234

申请日：2013-12-17

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Seung Hyuk KANG

IPC: H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

Abstract translation: 磁隧道结（MTJ）装置包括自由层。 MTJ还包括耦合到自由层的阻挡层。 MTJ还具有耦合到阻挡层的固定层。 固定层包括具有第一垂直磁各向异性（PMA）和第一阻尼常数的第一合成反铁磁（SAF）多层。 固定层还包括具有第二垂直磁各向异性（PMA）和低于第一阻尼常数的第二阻尼常数的第二SAF多层。 第一SAF多层比第二SAF多层更靠近阻挡层。 固定层还包括在第一和第二SAF多层之间的SAF耦合层。