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公开(公告)号：US20240332080A1
公开(公告)日：2024-10-03
申请号：US18417365
申请日：2024-01-19
发明人： Hironori FURUTA , Toru KOSAKA , Takahiro IDA , Takuma ISHIKAWA , Kenichi TANIGAWA , Takahito SUZUKI , Yutaka KITAJIMA
IPC分类号： H01L21/78
CPC分类号： H01L21/7813
摘要： A manufacturing method of a substrate unit includes forming a semiconductor laminated body on a substrate; forming a sacrificial layer on the semiconductor laminated body; forming a semiconductor functional layer on the sacrificial layer; and forming a protective film that covers at least a back surface of the substrate different from a formation surface on which the semiconductor laminated body is formed, a side face of the substrate, and a side face of the semiconductor laminated body.
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12.发明公开公开(公告)号：US20230320228A1
公开(公告)日：2023-10-05
申请号：US18179929
申请日：2023-03-07
发明人： Hironori FURUTA , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Takuma ISHIKAWA , Yutaka KITAJIMA , Akio KONISHI , Hiroaki KANAMORI , Takeshi IIZUKA
IPC分类号： H10N39/00 , B06B1/06 , H10N30/00 , H10N30/50 , H10N30/853 , H10N30/88 , H10N30/057 , G01S15/08 , G01S7/521
CPC分类号： H10N39/00 , B06B1/0611 , H10N30/10516 , H10N30/1071 , H10N30/50 , H10N30/853 , H10N30/8536 , H10N30/8542 , H10N30/8554 , H10N30/88 , H10N30/057 , G01S15/08 , G01S7/521
摘要： A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.
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公开(公告)号：US20230320217A1
公开(公告)日：2023-10-05
申请号：US18181093
申请日：2023-03-09
发明人： Hironori FURUTA , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Takuma ISHIKAWA , Yutaka KITAJIMA
IPC分类号： H10N30/073 , H10N30/00 , H10N30/06
CPC分类号： H10N30/073 , H10N30/10516 , H10N30/06
摘要： A piezoelectric-body film joint substrate includes a substrate, a substrate electrode provided on the substrate, a first piezoelectric-body film stuck on the substrate electrode and including a first piezoelectric film and a first upper electrode film formed on the first piezoelectric film, and a second piezoelectric-body film stuck on the first upper electrode film and including a second piezoelectric film different from the first piezoelectric film and a second upper electrode film formed on the second piezoelectric film.
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公开(公告)号：US20230157055A1
公开(公告)日：2023-05-18
申请号：US17979984
申请日：2022-11-03
发明人： Hironori FURUTA , Genichirou MATSUO , Akihiro IINO , Takahito SUZUKI , Kenichi TANIGAWA , Yusuke NAKAI , Shinya JUMONJI , Yuuki SHINOHARA
CPC分类号： H01L51/5253 , H01L51/56 , H05K1/181 , H05K3/303 , H05K2201/10106 , H05K2201/10128
摘要： An electronic structure includes a substrate having a first surface; a functional unit including a functional section that has an electronic function and a protective member that protects the functional section and having a second surface formed on the first surface’s side; and a support layer provided at a position to contact the first surface and having a third surface in contact with the second surface of the functional unit, area of the third surface being smaller than area of the second surface, wherein one of part of the functional unit forming the second surface of the protective member and part of the support layer forming the third surface contains organic material as its principal component and the other contains inorganic material as its principal component.
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15.发明公开公开(公告)号：US20240145631A1
公开(公告)日：2024-05-02
申请号：US18446271
申请日：2023-08-08
发明人： Shinya JUMONJI , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Yusuke NAKAI , Hiroto KAWADA , Genichirou MATSUO , Yutaka KITAJIMA
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0093
摘要： A manufacturing method of a semiconductor element includes forming a plurality of semiconductor layers on a sapphire substrate, each of the semiconductor layers having a first surface on the sapphire substrate side and a second surface on the opposite side, joining the second surfaces of the plurality of semiconductor layers to a retention member via an adhesive member, peeling off the plurality of semiconductor layers from the sapphire substrate by irradiating the first surfaces of the plurality of semiconductor layers with laser light, and polishing the first surfaces of the plurality of semiconductor layers. At least one semiconductor layer among the plurality of semiconductor layers includes a polishing indication part extending from the second surface toward the first surface. The polishing is executed until the polishing indication part is exposed to the polished surface.
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16.发明公开公开(公告)号：US20240145239A1
公开(公告)日：2024-05-02
申请号：US18446643
申请日：2023-08-09
发明人： Shinya JUMONJI , Toru KOSAKA , Takahito SUZUKI , Kenichi TANIGAWA , Yusuke NAKAI , Hiroto KAWADA , Genichirou MATSUO , Yutaka KITAJIMA
IPC分类号： H01L21/02 , H01L21/306 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/30625 , H01L29/2003 , H01L33/007
摘要： A manufacturing method of a semiconductor element includes forming a plurality of islands, each including a semiconductor layer containing a nitride semiconductor and a support formed on the semiconductor layer, on a sapphire substrate, joining the support to a retention substrate via an adhesive member, peeling off the semiconductor layer from the sapphire substrate by irradiating the semiconductor layer with laser light, and polishing a surface of the semiconductor layers peeled off from the sapphire substrate.
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