公开(公告)号：US09590005B1

公开(公告)日：2017-03-07

申请号：US15005672

申请日：2016-01-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

Abstract translation: 图像传感器包括在半导体衬底中彼此散布的第一和第二多个光电二极管。 入射光将被引导通过半导体衬底的表面进入第一和第二多个光电二极管。 与第二多个光电二极管相比，第一多个光电二极管对入射光的灵敏度更高。 金属膜层设置在第二多个光电二极管的半导体衬底的表面上，而不是在第一多个光电二极管上。 金属栅格设置在半导体衬底的表面上，并且包括第一多个开口，入射光通过该开口被引导到第一多个光电二极管中。 金属栅格还包括第二多个开口，入射光通过该第二多个开口被引导通过金属膜层进入第二多个光电二极管。

公开(公告)号：US20170006266A1

公开(公告)日：2017-01-05

申请号：US15266875

申请日：2016-09-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Jin Li ,  Yin Qian ,  Dyson H. Tai

IPC: H04N9/04 ,  H01L27/146 ,  H04N5/357 ,  G02B5/20 ,  H04N5/378

CPC classification number: H04N9/045 ,  G02B5/201 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H04N5/357 ,  H04N5/378

Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.

Abstract translation: 滤色器阵列包括多个平铺的最小重复单元，每个最小重复单元包括M×N个单独滤波器组。 每个最小重复单元包括多个成像过滤器，包括具有至少第一，第二和第三光响应的单个过滤器和至少一个具有参考光响应的参考过滤器，其中参考过滤器位于成像过滤器之间，其中参考光响应 透过与入射波长不同的光响应的滤光片基本保持未过滤的波长百分比。 公开和要求保护其他实施例。

公开(公告)号：US20160372507A1

公开(公告)日：2016-12-22

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

Abstract translation: 图像传感器包括布置在半导体材料中的光电二极管。 每个光电二极管的尺寸相同，并且在具有相同半导体加工条件的半导体材料中制造。 光电二极管被组织成包括第一光电二极管和第二光电二极管的虚拟大小组。 微透镜设置在半导体材料上，每个微透镜设置在相应的光电二极管上。 第一微透镜设置在第一光电二极管的上方，第二微透镜设置在第二光电二极管的上方。 掩模设置在第一微透镜和第一光电二极管之间。 掩模包括开口，通过第一微透镜的入射光的第一部分通过该开口被引导到第一光电二极管。 通过第一微透镜的入射光的第二部分被掩模阻挡到达第一光电二极管。 在第二微透镜和第二光电二极管之间没有掩模。

公开(公告)号：US20160227147A1

公开(公告)日：2016-08-04

申请号：US14612961

申请日：2015-02-03

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/3745 ,  H04N5/378

CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在第二掺杂区域和半导体材料的图像传感器电路正面之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

公开(公告)号：US09331115B2

公开(公告)日：2016-05-03

申请号：US14222833

申请日：2014-03-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Yin Qian ,  Gang Chen ,  Dyson H. Tai ,  Dajiang Yang

IPC: H04N9/73 ,  H04N9/04 ,  H04N9/87 ,  H01L27/146 ,  G02B13/00

CPC classification number: H01L27/14627 ,  G02B13/0015 ,  H01L27/14643

Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

Abstract translation: 图像传感器包括布置在半导体衬底中的多个感光器件。 平面层设置在半导体衬底中的多个光敏器件上。 由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。 由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。 由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。 在多个第二微透镜的回流处理之后，多个透镜屏障与相应的第二微透镜集成。

公开(公告)号：US09305949B2

公开(公告)日：2016-04-05

申请号：US14070286

申请日：2013-11-01

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。

公开(公告)号：US20160088265A1

公开(公告)日：2016-03-24

申请号：US14491039

申请日：2014-09-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chen-Wei Lu ,  Jin Li ,  Yin Qian ,  Dyson H. Tai

IPC: H04N9/04 ,  G02B5/20 ,  H04N5/374 ,  H01L27/146 ,  H04N5/357 ,  H04N5/365

CPC classification number: H04N9/045 ,  G02B5/201 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H04N5/357 ,  H04N5/378

Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.

Abstract translation: 滤色器阵列包括多个平铺的最小重复单元，每个最小重复单元包括M×N个单独滤波器组。 每个最小重复单元包括多个成像过滤器，包括具有至少第一，第二和第三光响应的单个过滤器和至少一个具有参考光响应的参考过滤器，其中参考过滤器位于成像过滤器之间，其中参考光响应 通过多个成像滤波器基本上发射未滤波的滤波器的入射到滤色器阵列上的串扰谱。 公开和要求保护其他实施例。

公开(公告)号：US20160071892A1

公开(公告)日：2016-03-10

申请号：US14478931

申请日：2014-09-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Philippe Matagne ,  Chih-Wei Hsiung ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/1461 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor pixel including a photodiode includes a first dopant region disposed within a semiconductor layer and a second dopant region disposed above the first dopant region and within the semiconductor layer. The second dopant region contacts the first dopant region and the second dopant region is of an opposite majority charge carrier type as the first dopant region. A third dopant region is disposed above the first dopant region and within the semiconductor layer. The third dopant region is of a same majority charge carrier type as the second dopant region but has a greater concentration of free charge carriers than the second dopant region. A transfer gate is positioned to transfer photogenerated charge from the photodiode. The second dopant region extends closer to an edge of the transfer gate than the third dopant region.

Abstract translation: 包括光电二极管的图像传感器像素包括设置在半导体层内的第一掺杂区和设置在第一掺杂区之上和半导体层内的第二掺杂区。 第二掺杂剂区域接触第一掺杂剂区域，并且第二掺杂剂区域具有与第一掺杂剂区域相反的多数电荷载流子类型。 第三掺杂剂区域设置在第一掺杂剂区域之上和半导体层内。 第三掺杂剂区域具有与第二掺杂剂区域相同的多数电荷载流子类型，但是具有比第二掺杂剂区域更大的自由电荷载流子浓度。 转移门被定位成从光电二极管转移光生电荷。 第二掺杂剂区域比第三掺杂剂区域更靠近传输栅极的边缘延伸。

公开(公告)号：US09123604B2

公开(公告)日：2015-09-01

申请号：US14056132

申请日：2013-10-17

Applicant: OmniVision Technologies, Inc.

Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

IPC: H01L31/12 ,  H01L27/12 ,  H01L31/06 ,  H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。

公开(公告)号：US10566364B2

公开(公告)日：2020-02-18

申请号：US16276561

申请日：2019-02-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

IPC: H01L27/146

Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.