公开(公告)号：US20160071892A1

公开(公告)日：2016-03-10

申请号：US14478931

申请日：2014-09-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Philippe Matagne ,  Chih-Wei Hsiung ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/1461 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

Abstract: An image sensor pixel including a photodiode includes a first dopant region disposed within a semiconductor layer and a second dopant region disposed above the first dopant region and within the semiconductor layer. The second dopant region contacts the first dopant region and the second dopant region is of an opposite majority charge carrier type as the first dopant region. A third dopant region is disposed above the first dopant region and within the semiconductor layer. The third dopant region is of a same majority charge carrier type as the second dopant region but has a greater concentration of free charge carriers than the second dopant region. A transfer gate is positioned to transfer photogenerated charge from the photodiode. The second dopant region extends closer to an edge of the transfer gate than the third dopant region.

Abstract translation: 包括光电二极管的图像传感器像素包括设置在半导体层内的第一掺杂区和设置在第一掺杂区之上和半导体层内的第二掺杂区。 第二掺杂剂区域接触第一掺杂剂区域，并且第二掺杂剂区域具有与第一掺杂剂区域相反的多数电荷载流子类型。 第三掺杂剂区域设置在第一掺杂剂区域之上和半导体层内。 第三掺杂剂区域具有与第二掺杂剂区域相同的多数电荷载流子类型，但是具有比第二掺杂剂区域更大的自由电荷载流子浓度。 转移门被定位成从光电二极管转移光生电荷。 第二掺杂剂区域比第三掺杂剂区域更靠近传输栅极的边缘延伸。