公开(公告)号：US20130221461A1

公开(公告)日：2013-08-29

申请号：US13627664

申请日：2012-09-26

Applicant: National Institute for Materials Science

Inventor： Hiroaki Sukegawa ,  Seiji Mitani ,  Tomohiko Niizeki ,  Tadakatsu Ohkubo ,  Kouichiro Inomata ,  Kazuhiro Hono ,  Masafumi Shirai ,  Yoshio Miura ,  Kazutaka Abe ,  Shingo Muramoto

IPC: H01L29/82

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。

公开(公告)号：US11105867B2

公开(公告)日：2021-08-31

申请号：US16074135

申请日：2017-01-31

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Thomas Scheike ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Kouichiro Inomata

IPC: G11C11/16 ,  G01R33/09 ,  G11B5/39 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0

公开(公告)号：US11004465B2

公开(公告)日：2021-05-11

申请号：US16311367

申请日：2017-06-23

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinya Kasai ,  Yukiko Takahashi ,  Pohan Cheng ,  Ikhtiar ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: G11B5/39 ,  H01F10/16 ,  H01F10/30 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L29/82 ,  H01F10/13

Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.

公开(公告)号：US10832719B2

公开(公告)日：2020-11-10

申请号：US16214375

申请日：2018-12-10

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki Sukegawa ,  Zhenchao Wen ,  Seiji Mitani ,  Koichiro Inomata ,  Takao Furubayashi ,  Jason Paul Hadorn ,  Tadakatsu Ohkubo ,  Kazuhiro Hono ,  Jungwoo Koo

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/84 ,  H01F10/32 ,  G11B5/39 ,  G11C11/16 ,  G11B5/851 ,  H01F10/12 ,  G11B5/66 ,  H01F10/30

Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

公开(公告)号：US10665776B2

公开(公告)日：2020-05-26

申请号：US16275947

申请日：2019-02-14

Applicant: TDK CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinto Ichikawa ,  Katsuyuki Nakada ,  Seiji Mitani ,  Hiroaki Sukegawa ,  Kazuhiro Hono ,  Tadakatsu Ohkubo

IPC: H01L43/10 ,  H01L43/12 ,  H01F10/32

Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x

公开(公告)号：US09336937B2

公开(公告)日：2016-05-10

申请号：US13935095

申请日：2013-07-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yukiko Takahashi ,  Srinivasan Ananthakrishnan ,  Varaprasad Bollapragada ,  Rajanikanth Ammanabrolu ,  Jaivardhan Sinha ,  Masamitsu Hayashi ,  Takao Furubayashi ,  Shinya Kasai ,  Shigeyuki Hirayama ,  Seiji Mitani ,  Kazuhiro Hono

IPC: H01F10/32 ,  H01F10/16 ,  C22C19/07 ,  G01R33/09 ,  G01R33/12 ,  G11C11/16 ,  H01L43/10 ,  H01F10/193 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  B82Y10/00 ,  B82Y25/00

CPC classification number: H01F10/16 ,  B82Y10/00 ,  B82Y25/00 ,  C22C19/07 ,  G01R33/093 ,  G01R33/098 ,  G01R33/1284 ,  G11B5/313 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/325 ,  H01F10/329 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/12611

Abstract: To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25

Abstract translation: 为了实现具有高性能的自旋电子装置，本发明的目的是提供一种具有大于0.65的自旋极化的Co2Fe基Heusler合金和使用其的高性能自旋电子装置。 Co2Fe（GaxGe1-x）Heusler合金在0.25