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    SEMICONDUCTOR DEVICE
    12.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210184028A1

    公开(公告)日：2021-06-17

    申请号：US17014009

    申请日：2020-09-08

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Jumpei TAJIMA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

    IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/45 ,  H01L29/417

    摘要： According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first electrode includes a first electrode portion. The second semiconductor layer includes first and second semiconductor portions. The third semiconductor layer includes first and second semiconductor regions. The second semiconductor region is electrically connected to the first semiconductor region and the first electrode portion. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.

    SEMICONDUCTOR DEVICE
    13.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210066486A1

    公开(公告)日：2021-03-04

    申请号：US16802315

    申请日：2020-02-26

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yosuke KAJIWARA ,  Hiroshi ONO ,  Jumpei TAJIMA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE ,  Masahiko KURAGUCHI

    IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06 ,  H01L29/36 ,  H01L29/51 ,  H01L29/417 ,  H01L29/423

    摘要： According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    14.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200328279A1

    公开(公告)日：2020-10-15

    申请号：US16799953

    申请日：2020-02-25

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Toshiki HIKOSAKA ,  Hiroshi ONO ,  Jumpei TAJIMA ,  Masahiko KURAGUCHI ,  Shinya NUNOUE

    IPC分类号： H01L29/423 ,  H01L29/739

    摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

    NITRIDE SEMICONDUCTOR ELEMENT
    15.
    发明申请
    NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
    氮化物半导体元件

    公开(公告)号：US20170025578A1

    公开(公告)日：2017-01-26

    申请号：US15053266

    申请日：2016-02-25

    申请人： Kabushiki Kaisha Toshiba

    发明人： Toshiki HIKOSAKA ,  Hisashi Yoshida ,  Kenjiro Uesugi ,  Hiroshi Ono ,  Shinya Nunoue

    IPC分类号： H01L33/32 ,  H01L33/38 ,  H01L33/22 ,  H01L33/18 ,  H01L33/24

    CPC分类号： H01L33/32 ,  H01L33/18 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L2933/0091

    摘要： According to one embodiment, a nitride semiconductor element includes a p-type semiconductor layer and a p-side electrode. The p-type semiconductor layer includes a nitride semiconductor, and has a first surface. The p-side electrode contacts the first surface. The first surface is a semi-polar plane. The first surface includes a plurality of protrusions. A height of the protrusions along a first direction is not less than 1 nanometer and not more than 5 nanometers. The first direction is from the p-type semiconductor layer toward the p-side electrode. A density of the protrusions in the first surface is more than 1.0×1010/cm2 and not more than 6.1×1010/cm2.

    摘要翻译： 根据一个实施例，氮化物半导体元件包括p型半导体层和p侧电极。 p型半导体层包括氮化物半导体，并且具有第一表面。 p侧电极接触第一表面。 第一个表面是半极性平面。 第一表面包括多个突起。 沿着第一方向的突起的高度不小于1纳米且不大于5纳米。 第一方向是从p型半导体层向p侧电极。 第一表面中的突起的密度大于1.0×10 10 / cm 2且不大于6.1×10 10 / cm 2。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER
    16.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER 有权
    半导体发光器件，氮化物半导体层和形成氮化物半导体层的方法

    公开(公告)号：US20160035938A1

    公开(公告)日：2016-02-04

    申请号：US14884364

    申请日：2015-10-15

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

    IPC分类号： H01L33/20 ,  H01L33/32

    CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

    摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

    摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    19.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240014273A1

    公开(公告)日：2024-01-11

    申请号：US18471372

    申请日：2023-09-21

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Toshiki HIKOSAKA ,  Jumpei TAJIMA ,  Shinya NUNOUE

    IPC分类号： H01L29/207 ,  H01L29/778 ,  H01L29/66 ,  H01L29/417

    CPC分类号： H01L29/207 ,  H01L29/7787 ,  H01L29/66462 ,  H01L29/41775

    摘要： According to one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer including magnesium and Alx1Ga1−x1N. The first semiconductor layer includes first, second, and third regions. The first region is between the substrate and the third region. The second region is between the first and third regions. A first concentration of magnesium in the first region is greater than a third concentration of magnesium in the third region. A second concentration of magnesium in the second region decreases along a first orientation. The first orientation is from the substrate toward the first semiconductor layer. A second change rate of a logarithm of the second concentration with respect to a change of a position along the first orientation is greater than a third change rate of a logarithm of the third concentration with respect to the change of the position along the first orientation.