公开(公告)号：US20140063490A1

公开(公告)日：2014-03-06

申请号：US14010484

申请日：2013-08-26

Applicant: KLA-Tencor Corporation

Inventor： Qiang Zhang ,  Yanwei Liu ,  Abdurrahman Sezginer

IPC: G01J1/42

CPC classification number: G01J1/00 ,  G01J1/4257 ,  G02B5/0833 ,  G02B5/0891 ,  G03F1/24 ,  G03F1/50 ,  G03F1/52 ,  G03F1/84 ,  G21K7/00

Abstract: Disclosed is test structure for measuring wave-front aberration of an extreme ultraviolet (EUV) inspection system. The test structure includes a substrate formed from a material having substantially no reflectivity for EUV light and a multilayer (ML) stack portion, such as a pillar, formed on the substrate and comprising a plurality of alternating pairs of layers having different refractive indexes so as to reflect EUV light. The pairs have a count equal to or less than 15.

Abstract translation: 公开了用于测量极紫外（EUV）检测系统的波前像差的测试结构。 测试结构包括由基本上不对EUV光反射的材料形成的基板和形成在基板上的多层（ML）堆叠部分，例如柱状物，并且包括具有不同折射率的多个交替对的层， 反映EUV光。 这些对具有等于或小于15的计数。

公开(公告)号：US10074036B2

公开(公告)日：2018-09-11

申请号：US14884670

申请日：2015-10-15

Applicant: KLA-Tencor Corporation

Inventor： Yanwei Liu ,  Hawren Fang

IPC: G06K9/00 ,  G06K9/62 ,  G06T7/60 ,  G03F1/84 ,  G06T7/00 ,  G06T7/41 ,  G06K9/03

CPC classification number: G06K9/6218 ,  G03F1/84 ,  G06K9/036 ,  G06T7/001 ,  G06T7/41 ,  G06T7/60 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: Disclosed are methods and apparatus for inspecting a photolithographic reticle. Modeled images of a plurality of target features of the reticle are obtained based on a design database for fabricating the reticle. An inspection tool is used to obtain a plurality of actual images of the target features of the reticle. The modelled and actual images are binned into a plurality of bins based on image properties of the modelled and actual images, and at least some of the image properties are affected by one or more neighbor features of the target features on the reticle in a same manner. The modelled and actual images from at least one of the bins are analyzed to generate a feature characteristic uniformity map for the reticle.

公开(公告)号：US08941336B1

公开(公告)日：2015-01-27

申请号：US14300101

申请日：2014-06-09

Applicant: KLA-Tencor Corporation

Inventor： Yanwei Liu ,  Daniel C. Wack

IPC: H01J40/00 ,  H01J47/00 ,  H05H13/04 ,  H05G2/00

CPC classification number: H05H13/04 ,  H01J37/02 ,  H05G2/00 ,  H05G2/001 ,  H05H7/04 ,  H05H7/08

Abstract: A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.

Abstract translation: 紧凑型同步加速器辐射源包括电子束发生器，电子存储环，沿着电子存储环的一个或多个直线部分设置的一个或多个摆动插入装置，一个或多个摆动插入装置包括一组磁极， 产生适于产生沿着存储环的电子的行进方向发射的同步加速器辐射的周期性交变磁场，其中一个或多个摆动插入装置被布置成向晶片光学表征系统的一组照明光学器件提供光 或掩模光学表征系统，其中由一个或多个摆动插入装置发射的光束的光密度与晶片光学表征系统和掩模光学表征系统中的至少一个的照明光学器件相匹配。

公开(公告)号：US20140131586A1

公开(公告)日：2014-05-15

申请号：US13786049

申请日：2013-03-05

Applicant: KLA-TENCOR CORPORATION

Inventor： Daimian Wang ,  Oleg Khodykin ,  Daniel Wack ,  Li Wang ,  Yanwei Liu

IPC: G02B5/18 ,  G01N21/956

CPC classification number: G02B5/1838 ,  G01J3/18 ,  G01N21/956 ,  G01N2021/95676 ,  G02B5/203 ,  G03F1/0092 ,  G03F1/84

Abstract: Spectral Purity Filters, or SPFs, are disclosed. Such SPFs are designed to block out the 1030 nm drive laser and other undesired out of band light in a EUV mask inspection system. Different phase grating configurations for near normal incidence and grazing incidence are provided in the present disclosure and are configured specifically for EUV mask inspection.

Abstract translation: 公开了光谱纯化过滤器或SPF。 这样的SPF被设计为在EUV掩模检查系统中阻挡1030nm驱动激光器和其它不期望的带外光。 在本公开内容中提供了用于近似法向入射和掠入射的不同相位光栅配置，并且被专门用于EUV掩模检查。

公开(公告)号：US20130313442A1

公开(公告)日：2013-11-28

申请号：US13898705

申请日：2013-05-21

Applicant: KLA-Tencor Corporation, a Delaware Corporation

Inventor： Li Wang ,  Daimian Wang ,  Yanwei Liu ,  Alan Michael Aindow

IPC: G01N21/956 ,  G01N21/94

CPC classification number: G01N21/956 ,  G01N21/94 ,  G01N23/2273 ,  G01N2223/611 ,  G01N2223/652 ,  G03F1/86 ,  G06T7/0004 ,  H01L31/02168

Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.

Abstract translation: 描述了用于EUV（极紫外）掩模检查和光刻系统的光电子发射测绘系统。 映射系统可用于为EUV光刻掩模和/或EUV反射镜提供光电子发射图。 该系统使用用于掩模检查或光刻的EUV光电子源将EUV光照射在掩模和/或反射镜上。 EUV光在掩模和/或反射镜的表面上产生光电子，并且通过放置在远离EUV室的光学空间的检测器收集和分析光电子。