公开(公告)号：US20150199463A1

公开(公告)日：2015-07-16

申请号：US14594917

申请日：2015-01-12

Applicant: KLA-Tencor Corporation

Inventor： Jonathan Iloreta ,  Matthew A. Laffin ,  Leonid Poslavsky ,  Torsten Kaack ,  Qiang Zhao ,  Lie-Quan Lee

IPC: G06F17/50

CPC classification number: H01L22/12

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user. The resulting models can be exported to a file that can be used by others and may include security features to control the sharing of sensitive intellectual property with particular users.

Abstract translation: 提出了基于可重复使用的参数模型生成复杂设备结构测量模型的方法和工具。 采用这些模型的计量系统被配置为测量与不同半导体制造工艺相关联的结构和材料特性。 可重复使用的参数子结构模型由模型构建工具的用户输入的一组独立参数完全定义。 与模型形状相关联的所有其他变量和组成几何元素之间的内部约束在模型中被预先定义。 在一些实施例中，将一个或多个可重复使用的参数模型集成到复合半导体器件的测量模型中。 在另一方面，模型构建工具基于来自用户的输入生成可重复使用的参数子结构模型。 所得到的模型可以导出到其他人可以使用的文件，并且可能包括用于控制与特定用户共享敏感知识产权的安全功能。

公开(公告)号：US10605722B2

公开(公告)日：2020-03-31

申请号：US15836160

申请日：2017-12-08

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  John Lesoine ,  Malik Sadiq ,  Lanhua Wei ,  Shankar Krishnan ,  Leonid Poslavsky ,  Mikhail M. Sushchik

IPC: G01N21/21 ,  G01N21/95 ,  G01N21/27

Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.

公开(公告)号：US10151986B2

公开(公告)日：2018-12-11

申请号：US14790793

申请日：2015-07-02

Applicant: KLA-Tencor Corporation

Inventor： Andrei V. Shchegrov ,  Thaddeus Gerard Dziura ,  Stilian Ivanov Pandev ,  Leonid Poslavsky

IPC: G03F7/20 ,  H01L21/66

Abstract: Methods and systems for estimating values of parameters of interest of actual device structures based on optical measurements of nearby metrology targets are presented herein. High throughput, inline metrology techniques are employed to measure metrology targets located near actual device structures. Measurement data collected from the metrology targets is provided to a trained signal response metrology (SRM) model. The trained SRM model estimates the value of one or more parameters of interest of the actual device structure based on the measurements of the metrology target. The SRM model is trained to establish a functional relationship between actual device parameters measured by a reference metrology system and corresponding optical measurements of at least one nearby metrology target. In a further aspect, the trained SRM is employed to determine corrections of process parameters to bring measured device parameter values within specification.

公开(公告)号：US20180100796A1

公开(公告)日：2018-04-12

申请号：US15836160

申请日：2017-12-08

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  John Lesoine ,  Malik Sadiq ,  Lanhua Wei ,  Shankar Krishnan ,  Leonid Poslavsky ,  Mikhail M. Sushchik

IPC: G01N21/21 ,  G01N21/95 ,  G01N21/27

CPC classification number: G01N21/211 ,  G01B2210/56 ,  G01N21/274 ,  G01N21/9501 ,  G01N2021/213

Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.

公开(公告)号：US09595481B1

公开(公告)日：2017-03-14

申请号：US14464640

申请日：2014-08-20

Applicant: KLA-Tencor Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

IPC: H01L21/66 ,  G01R31/26 ,  G01N21/95

CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/8438 ,  G01N2021/95676 ,  G01R31/2601

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学分散模型包括具有对未完成的多层半导体晶片的层的带隙敏感的连续第一导数的连续Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

公开(公告)号：US20160341792A1

公开(公告)日：2016-11-24

申请号：US15158883

申请日：2016-05-19

Applicant: KLA-Tencor Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky

IPC: G01R31/308 ,  G01N21/95 ,  H01L21/66

CPC classification number: G01R31/308 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2201/12 ,  G01R31/44 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring band structure characteristics and predicting electrical characteristics of a sample early in a semiconductor manufacturing process flow are presented herein. High throughput spectrometers generate spectral response data from semiconductor wafers. In one example, the measured optical dispersion is characterized by a Gaussian oscillator, continuous Cody-Lorentz model. The measurement results are used to monitor band structure characteristics, including band gap and defects such as charge trapping centers, exciton states, and phonon modes in high-K dielectric layers and embedded nanostructures. The Gaussian oscillator, continuous Cody-Lorentz model can be generalized to include any number of defect levels. In addition, the shapes of absorption defect peaks may be represented by Lorentz functions, Gaussian functions, or both. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract translation: 本文介绍了在半导体制造工艺流程中早期监测样品结构特征和预测样品电特性的方法和系统。 高通量光谱仪从半导体晶圆产生光谱响应数据。 在一个示例中，测量的光学色散的特征在于高斯振荡器，连续的Cody-Lorentz模型。 测量结果用于监测高K电介质层和嵌入式纳米结构中的带结构特征，包括带隙和缺陷，例如电荷俘获中心，激子态和声子模式。 高斯振荡器，连续的Cody-Lorentz模型可以推广到包括任何数量的缺陷水平。 此外，吸收缺陷峰的形状可以由洛伦兹函数，高斯函数或两者表示。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

公开(公告)号：US09412673B2

公开(公告)日：2016-08-09

申请号：US14459516

申请日：2014-08-14

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

公开(公告)号：US09405290B1

公开(公告)日：2016-08-02

申请号：US14156303

申请日：2014-01-15

Applicant: KLA-Tencor Corporation

Inventor： Natalia Malkova ,  Leonid Poslavsky

IPC: G06F19/00 ,  G01R31/26 ,  G05B19/418

CPC classification number: G01N21/8422 ,  G01N21/211 ,  G01N21/9501 ,  H01L21/00 ,  H01L22/12 ,  Y02P90/14

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a Cody-Lorentz model augmented by one or more oscillator functions sensitive to one or more defects of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学色散模型包括由对未完成的多层半导体晶片的一个或多个缺陷敏感的一个或多个振荡器函数增强的Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

公开(公告)号：US20150112624A1

公开(公告)日：2015-04-23

申请号：US14588055

申请日：2014-12-31

Applicant: KLA-Tencor Corporation

Inventor： Michael Adel ,  Leonid Poslavsky ,  John Fielden ,  John Madsen ,  Robert Peters

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Metrology may be implemented during semiconductor device fabrication by a) modeling a first measurement on a first test cell formed in a layer of a partially fabricated device; b) performing a second measurement on a second test cell in the layer; c) feeding information from the second measurement into the modeling of the first measurement; and after a lithography pattern has been formed on the layer including the first and second test cells, d) modeling a third and a fourth measurement on the first and second test cells respectively using information from a) and b) respectively.

Abstract translation: 可以在半导体器件制造期间通过以下步骤来实现计量：a）对形成在部分制造的器件的层中的第一测试单元上的第一测量进行建模; b）对所述层中的第二测试单元执行第二测量; c）将第二测量中的信息馈送到第一测量的建模中; 并且在包括第一和第二测试单元的层上形成光刻图案之后，d）分别使用来自a）和b）的信息对第一和第二测试单元上的第三和第四测量进行建模。

公开(公告)号：US20150058813A1

公开(公告)日：2015-02-26

申请号：US14459516

申请日：2014-08-14

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: G06F17/50

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。