公开(公告)号：US11353321B2

公开(公告)日：2022-06-07

申请号：US16900626

申请日：2020-06-12

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Ohad Bachar ,  Nadav Gutman

IPC: G01B11/27 ,  G01B9/02001 ,  G03F7/20 ,  G01M11/02

Abstract: A metrology system is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology system includes a stage configured to secure a sample, one or more diffraction-based overlay (DBO) metrology targets disposed on the sample. The metrology system includes a light source and one or more sensors. The metrology system includes a set of optics configured to direct illumination light from the light source to the one or more DBO metrology targets of the sample, the set of optics including a half-wave plate, the half-wave plate selectively insertable into an optical path such that the half-wave plate selectively passes both illumination light from an illumination channel and collection light from a collection channel, the half-wave plate being configured to selectively align an orientation of linearly polarized illumination light from the light source to an orientation of a grating of the one or more DBO metrology targets.

公开(公告)号：US12092966B2

公开(公告)日：2024-09-17

申请号：US18386846

申请日：2023-11-03

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Nadav Gutman ,  Frank Laske ,  Andrei V. Shchegrov

IPC: G01B15/00 ,  G01B11/27 ,  G03F7/00

CPC classification number: G03F7/706845 ,  G01B11/272 ,  G01B15/00 ,  G03F7/70655 ,  G01B2210/56

Abstract: A system and method are disclosed for generating metrology measurements with second sub-system such as an optical sub-system. The method may include performing a training and a run-time operation. The training may include receiving first metrology data for device features from the first metrology sub-system (e.g., optical); generating first metrology measurements (e.g., critical dimensions, etc.); binning the device features into two or more device bins based on the first metrology measurements; and identifying representative metrology targets for the two or more device bins based on distributions of the first metrology measurements. The run-time operation may include receiving run-time metrology data (e.g., optical) of the representative metrology targets; and generating run-time metrology measurements based on the run-time metrology data.

公开(公告)号：US12001148B2

公开(公告)日：2024-06-04

申请号：US18114451

申请日：2023-02-27

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew V. Hill ,  Yonatan Vaknin ,  Yossi Simon ,  Daria Negri ,  Vladimir Levinski ,  Yuri Paskover ,  Anna Golotsvan ,  Nachshon Rothman ,  Nireekshan K. Reddy ,  Nir BenDavid ,  Avi Abramov ,  Dror Yaacov ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F7/00 ,  G02B27/28 ,  H04N23/56

CPC classification number: G03F7/70633 ,  G02B27/283 ,  G03F7/70641 ,  H04N23/56

Abstract: A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.

公开(公告)号：US11862524B2

公开(公告)日：2024-01-02

申请号：US17487842

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L22/30 ,  H01L23/544 ,  H01L22/12

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

公开(公告)号：US20230324810A1

公开(公告)日：2023-10-12

申请号：US18204662

申请日：2023-06-01

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US20220413394A1

公开(公告)日：2022-12-29

申请号：US17487725

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

公开(公告)号：US20220317577A1

公开(公告)日：2022-10-06

申请号：US17219869

申请日：2021-03-31

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew Hill ,  Yonatan Vaknin ,  Yossi Simon ,  Daria Negri ,  Vladimir Levinski ,  Yuri Paskover ,  Anna Golotsvan ,  Nachshon Rothman ,  Nireekshan K. Reddy ,  Nir BenDavid ,  Avi Abramov ,  Dror Yaacov ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F7/20 ,  H04N5/225 ,  G02B27/28

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

公开(公告)号：US20210389125A1

公开(公告)日：2021-12-16

申请号：US16900626

申请日：2020-06-12

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Ohad Bachar ,  Nadav Gutman

IPC: G01B11/27 ,  G01B9/02

Abstract: A metrology system is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology system includes a stage configured to secure a sample, one or more diffraction-based overlay (DBO) metrology targets disposed on the sample. The metrology system includes a light source and one or more sensors. The metrology system includes a set of optics configured to direct illumination light from the light source to the one or more DBO metrology targets of the sample, the set of optics including a half-wave plate, the half-wave plate selectively insertable into an optical path such that the half-wave plate selectively passes both illumination light from an illumination channel and collection light from a collection channel, the half-wave plate being configured to selectively align an orientation of linearly polarized illumination light from the light source to an orientation of a grating of the one or more DBO metrology targets.

公开(公告)号：US12055859B2

公开(公告)日：2024-08-06

申请号：US18204662

申请日：2023-06-01

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US20240168391A1

公开(公告)日：2024-05-23

申请号：US18386846

申请日：2023-11-03

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Nadav Gutman ,  Frank Laske ,  Andrei V. Shchegrov

IPC: G03F7/00 ,  G01B11/27 ,  G01B15/00

CPC classification number: G03F7/706845 ,  G01B11/272 ,  G01B15/00 ,  G03F7/70655 ,  G01B2210/56

Abstract: A system and method are disclosed for generating metrology measurements with second sub-system such as an optical sub-system. The method may include performing a training and a run-time operation. The training may include receiving first metrology data for device features from the first metrology sub-system (e.g., optical); generating first metrology measurements (e.g., critical dimensions, etc.); binning the device features into two or more device bins based on the first metrology measurements; and identifying representative metrology targets for the two or more device bins based on distributions of the first metrology measurements. The run-time operation may include receiving run-time metrology data (e.g., optical) of the representative metrology targets; and generating run-time metrology measurements based on the run-time metrology data.