公开(公告)号：US06579420B2

公开(公告)日：2003-06-17

申请号：US09780212

申请日：2001-02-09

Applicant: Zhimin Wan ,  Jiong Chen ,  Peiching Ling ,  Jianmin Qiao

Inventor： Zhimin Wan ,  Jiong Chen ,  Peiching Ling ,  Jianmin Qiao

IPC: C23C1600

CPC classification number: C23C14/505 ,  C23C14/044 ,  C23C14/46

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

公开(公告)号：US06403967B1

公开(公告)日：2002-06-11

申请号：US09419448

申请日：1999-10-15

Applicant: Jiong Chen ,  Jinliang Chen ,  Eric Henry Jon Antonissen

Inventor： Jiong Chen ,  Jinliang Chen ,  Eric Henry Jon Antonissen

IPC: H01J37147

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/147

Abstract: An apparatus for ion implantation using high perveance beams is disclosed. The apparatus includes a dipole magnet apparatus that provides an adjustment to a cross-beam magnetic dipole field in an ion implantation system. Introduction and control of the magnetic dipole field gradient in a low energy implantation system as disclosed herein gives a significant improvement to the magnet's acceptance and beam focusing which largely defines the effective transported beam current. The apparatus involves the use of ferromagnetic yokes of a prescribed shape and a portion of a secondary magnet coil following along the outside radius of a set of primary dipole magnet coils which define and delineate the primary magnetic field area and beam path. The current return path for the secondary magnet coil is via another portion of the secondary magnet coil that follows a path such that the field generated by the return path secondary magnet coil is orthogonal to the primary magnetic field. The resulting magnetic field across the beam cross-section has a sloping shape with relative maxima and minima near the transverse beamline boundary. The action of the magnetic field distribution on the ion beam acts to compensate the space-charge dispersion of high perveance beams.

Abstract translation: 公开了一种使用高度方位离子束的离子注入装置。 该装置包括偶极磁体装置，其提供离子注入系统中的横梁磁偶极场的调节。 在本文公开的低能量注入系统中的磁偶极场梯度的引入和控制给出了磁体的接受度和束聚焦的显着改进，其大大限定了有效传输的束电流。 该装置涉及使用规定形状的铁磁轭和次级电磁线圈的一部分，沿着一组初级偶极子磁体线圈的外半径，其限定并描绘主磁场区域和射束路径。 次级电磁线圈的电流返回路径经过次级磁体线圈的另一部分，其沿着路径使得由返回路径次级磁体线圈产生的磁场与初级磁场正交。 横截面横截面上产生的磁场具有相对最大值和最小值的横向波束边界附近的倾斜形状。 离子束上的磁场分布的作用用于补偿高通量波束的空间电荷分散。

公开(公告)号：US5814819A

公开(公告)日：1998-09-29

申请号：US891688

申请日：1997-07-11

Applicant: Frank Sinclair ,  Victor Benveniste ,  Jiong Chen

Inventor： Frank Sinclair ,  Victor Benveniste ,  Jiong Chen

IPC: H01J37/317 ,  C23C14/48 ,  G21K1/14 ,  H01J37/02 ,  H01J27/02

CPC classification number: H01J37/026 ,  H01J2237/31701

Abstract: An improved ion beam neutralizer (22) is provided for neutralizing the electrical charge of an ion beam (28) output from an extraction aperture (50). The neutralizer comprises a source of water (52); a vaporizer (54) connected to the source of water; a mass flow controller (56) connected to the vaporizer; and an inlet (60) connected to the mass flow controller. The vaporizer (54) converts water from the source (52) from a liquid state to a vapor state. The mass flow controller (56) receives water vapor from the vaporizer (54) and meters the volume of water vapor output by a mass flow controller outlet (66). The inlet (60) is provided with an injection port (68) located proximate the ion beam extraction aperture (50) and receives the metered volume from the outlet (66). The injection port (68) is positioned near the extraction aperture so that the ion beam and the water vapor interact to neutralize the ion beam. The improved ion beam neutralizer (22) is especially effective in low energy (less than ten kilo-electron volts (10 KeV)) beam applications.

Abstract translation: 提供改进的离子束中和器（22），用于中和从提取孔（50）输出的离子束（28）的电荷。 中和器包括水源（52）; 连接到水源的蒸发器（54）; 连接到蒸发器的质量流量控制器（56） 以及连接到质量流量控制器的入口（60）。 蒸发器（54）将来自源（52）的水从液态转换为蒸汽状态。 质量流量控制器（56）接收来自蒸发器（54）的水蒸汽并且测量由质量流量控制器出口（66）输出的水蒸汽的体积。 入口（60）设置有靠近离子束提取孔（50）定位并从出口（66）接收计量体积的注射口（68）。 注入口（68）位于提取孔附近，使得离子束和水蒸气相互作用以中和离子束。 改进的离子束中和器（22）在低能量（小于十千伏电压（10KeV）））的应用中特别有效。

公开(公告)号：US09455363B2

公开(公告)日：2016-09-27

申请号：US13920077

申请日：2013-06-17

Applicant: Jiong Chen ,  Junhua Hong

Inventor： Jiong Chen ,  Junhua Hong

IPC: H01L31/068 ,  H01L31/18 ,  H01L21/265 ,  H01L21/266

CPC classification number: H01L31/0682 ,  H01L21/26586 ,  H01L21/266 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.

Abstract translation: 公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，然后形成具有开放区域的阻挡层。 通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。 引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触 从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。 由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

公开(公告)号：US20140366936A1

公开(公告)日：2014-12-18

申请号：US13920077

申请日：2013-06-17

Applicant: Jiong Chen ,  Junhua Hong

Inventor： Jiong Chen ,  Junhua Hong

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/0682 ,  H01L21/26586 ,  H01L21/266 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.

Abstract translation: 公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，随后形成具有开放区域的阻挡层。 通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。 引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触 从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。 由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

公开(公告)号：US08354654B2

公开(公告)日：2013-01-15

申请号：US12661522

申请日：2010-03-18

Applicant: Jiong Chen

Inventor： Jiong Chen

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J49/00 ,  H01J2237/057 ,  H01J2237/1526 ,  H01J2237/153 ,  H01J2237/166 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is built in.

Abstract translation: 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于在其AMU非分散平面上形成会聚束的离子提取装置。 离子注入装置包括在用于扫描非分散平面上的束的磁分析仪之前的磁扫描器，用于选择具有特定质荷比的离子的磁分析器通过质量狭缝以投射到基底上。 提供矩形四极磁体以准直扫描的离子束并将光束入射角精细校正到目标上。 结合能量过滤的减速或加速系统位于射束准直仪的下游。 公开了一种用于扫描目标的二维机械扫描系统，其中内置了光束诊断装置。

公开(公告)号：US07462843B2

公开(公告)日：2008-12-09

申请号：US11209484

申请日：2005-08-22

Applicant: Jiong Chen ,  Nicholas R. White

Inventor： Jiong Chen ,  Nicholas R. White

IPC: G21K5/10

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J49/30 ,  H01J2237/055 ,  H01J2237/057

Abstract: This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

Abstract translation: 本发明公开了一种具有多种工作模式的离子注入装置。 它具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。 本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

公开(公告)号：US06946667B2

公开(公告)日：2005-09-20

申请号：US10299443

申请日：2002-11-19

Applicant: Jiong Chen ,  Zhming Wan ,  Qing Qian

Inventor： Jiong Chen ,  Zhming Wan ,  Qing Qian

IPC: H01J37/317 ,  G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/024 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/24405 ,  H01J2237/24528

Abstract: An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

Abstract translation: 在本发明中公开了一种离子注入方法。 所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。 该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转 离子束返回到原始离子束路径，用于植入目标晶片。

公开(公告)号：US06338775B1

公开(公告)日：2002-01-15

申请号：US09633428

申请日：2000-08-07

Applicant: Jiong Chen

Inventor： Jiong Chen

IPC: C23C1400

CPC classification number: C23C14/505 ,  C23C14/46 ,  C23C14/547

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

Abstract translation: 本发明公开了一种薄膜沉积设备和方法。 该方法包括提供真空室的步骤，该真空室容纳用于产生薄膜颗粒的薄膜颗粒源，以在基板上沉积薄膜。 该方法还包括在真空室中容纳用于保持具有面向薄膜颗粒源的薄膜沉积表面的多个基板的基板保持器的步骤。 该方法还包括提供旋转装置的步骤，旋转装置用于旋转衬底保持器以使暴露于薄膜颗粒的每个衬底旋转以在其上沉积薄膜。 并且，所述方法还包括提供横向移动装置的步骤，用于横向移动和控制用于每个基板的径向方向上的曝光时间的持续时间，以控制沉积在每个基板上的薄膜的厚度均匀性。

公开(公告)号：US06326746B1

公开(公告)日：2001-12-04

申请号：US09602765

申请日：2000-06-23

Applicant: Jiong Chen

Inventor： Jiong Chen

IPC: H05H900

CPC classification number: H05H9/00

Abstract: A new radio frequency (rf) linear accelerator (linac) is disclosed in this invention. The rf linac includes a plurality of resonators each includes an inductor circuit L(k), k=1,2,3, . . . , n′ where n′ is a second integer, wherein the inductor circuit connected to at least two electrodes E(j′), j′=1,2,3, . . . (n−1), for applying an accelerating rf voltage thereto. The rf linac further includes a plurality sets of transverse focusing lenses, represented by Lenses(j), where j=1,2,3, . . . n, and n is an integer, for guiding and focusing an ion beam. Each of the electrodes E(j′) disposed between and aligned with two sets of the transverse focusing lenses Lenses(J′) and Lenses(J′+1), j′=1,2,3, . . . (n−1), as a linear array. In a preferred embodiment, at least two of the adjacent electrodes E(j′) and E(j′+1) are connected to a same inductor circuit L(k). In another preferred embodiment, at least two of the adjacent electrodes E(j′) and E(j′+1) are connected to two different inductor circuits L(k1) and L(k2) where k1 and k2 are two different integers and k1 and k2 are smaller than n′. The energy gain from a resonator of this invention is twice or multiple of the energy gain from a single-electrode resonator with the same rf power efficiency.

Abstract translation: 在本发明中公开了一种新的射频（RF）线性加速器（直线加速器）。 rf直线加速器包括多个谐振器，每个谐振器包括电感器电路L（k），k = 1,2,3。 。 。 ，n'，其中n'是第二整数，其中所述电感器电路连接到至少两个电极E（j'），j'= 1,2,3。 。 。 （n-1），用于向其施加加速rf电压。 rf线性加速器还包括由透镜（j）表示的多组横向聚焦透镜，其中j = 1,2,3。 。 。 n，n为整数，用于引导和聚焦离子束。 每个电极E（j'）设置在两组横向聚焦透镜透镜（J'）和透镜（J'+ 1）之间并与之对准，j'= 1,2,3。 。 。 （n-1），作为线性阵列。 在优选实施例中，相邻电极E（j'）和E（j'+ 1）中的至少两个连接到相同的电感器电路L（k）。 在另一优选实施例中，至少两个相邻电极E（j'）和E（j'+ 1）连接到两个不同的电感器电路L（k1）和L（k2），其中k1和k2是两个不同的整数， k1和k2小于n'。 来自本发明的谐振器的能量增益是具有相同射频功率效率的单电极谐振器的能量增益的两倍或两倍。