公开(公告)号：US07099362B2

公开(公告)日：2006-08-29

申请号：US10706906

申请日：2003-11-14

申请人： Jin K. Kim

发明人： Jin K. Kim

IPC分类号： H01S5/034

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3095 ,  H01S5/34306 ,  H01S2304/04

摘要： A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, the tunnel junction including a modulation-doped layer; and a second mirror stack over the tunnel junction. The modulation doped layer can be used for either the n-layer or the p-layer, or the both layers of the tunnel junction. Such tunnel junctions are especially useful for a long wavelength VCSEL.

摘要翻译： 垂直腔表面发射激光器（VCSEL）包括衬底; 衬底上的第一反射镜堆叠; 有源区，其在所述第一反射镜叠层上具有多个量子阱; 在有源区上的隧道结，隧道结包括调制掺杂层; 以及在隧道交界处的第二反射镜堆叠。 调制掺杂层可以用于n层或p层，或隧道结的两个层。 这种隧道结对于长波长VCSEL特别有用。

公开(公告)号：US5473563A

公开(公告)日：1995-12-05

申请号：US171300

申请日：1993-12-22

申请人： Kang D. Suh ,  Jin K. Kim ,  Jeong H. Choi

发明人： Kang D. Suh ,  Jin K. Kim ,  Jeong H. Choi

IPC分类号： G11C16/04 ,  G11C16/02 ,  G11C16/06 ,  G11C16/12 ,  G11C16/16 ,  G11C17/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C7/00 ,  G11C11/40

CPC分类号： G11C16/16 ,  G11C16/12

摘要： A nonvolatile semiconductor memory device comprising an array of cell units, each cell unit including at least one memory transistor which has a floating gate and a control gate, the array being divided into a plurality of memory blocks each having a certain number of cell units. A selected memory block is erased by an erase voltage applied to a semiconductor substrate while unselected memory blocks are prevented from erasing by capacitive coupling of the erase voltage to floated word lines connected to control gates of memory transistors of the unselected memory blocks. In a program mode where a program voltage is applied to a selected word line of a selected memory block and a pass voltage is applied to unselected word lines of the selected memory block, channel regions and source and drain junctions of memory transistors of cell units in the selected memory block are charged to a program inhibition voltage. Channel regions and source and drain junctions of cell units associated with memory transistors programmed to the other binary data are discharged to be programmed while those of cell units associated with nonprogrammed memory transistors are maintained to the program inhibition voltage to prevent programming.

摘要翻译： 一种包括单元单元阵列的非易失性半导体存储器件，每个单元单元包括具有浮置栅极和控制栅极的至少一个存储晶体管，所述阵列被分成多个存储块，每个存储块具有一定数量的单元单元。 通过施加到半导体衬底的擦除电压擦除所选择的存储块，同时通过擦除电压与连接到未选择存储块的存储晶体管的控制栅极的浮置字线的电容耦合来防止未选择的存储块擦除。 在编程电压被施加到所选择的存储块的所选字线的编程模式中，并且通过电压被施加到所选择的存储块的未选字线，沟道区和源单元的存储晶体管的源极和漏极结 所选存储块被充电到编程禁止电压。 与编程到其他二进制数据的存储器晶体管相关联的单元单元的通道区域和源极和漏极结被放电以进行编程，而与非程序存储晶体管相关联的单元单元的通道区域和漏极结保持在程序禁止电压以防止编程。

公开(公告)号：US20110206663A1

公开(公告)日：2011-08-25

申请号：US13034551

申请日：2011-02-24

申请人： Anan Chuntharapai ,  Jin K. Kim ,  Leonard G. Presta ,  Timothy Stewart

发明人： Anan Chuntharapai ,  Jin K. Kim ,  Leonard G. Presta ,  Timothy Stewart

IPC分类号： A61K39/395 ,  C07K16/24 ,  C07H21/00 ,  C12N15/63 ,  C12N1/00 ,  C12N5/10 ,  C12P21/00 ,  C12N5/12 ,  G01N33/53 ,  A61P37/06

CPC分类号： C07K16/249 ,  A61K2039/505 ,  C07K2317/24 ,  C07K2317/55 ,  C07K2317/565 ,  C07K2317/567 ,  C07K2317/76 ,  C07K2317/92 ,  C07K2319/00 ,  G01N33/564 ,  G01N33/6866 ,  G01N2333/56 ,  G01N2800/042 ,  G01N2800/24

摘要： The present invention relates generally to the generation and characterization of neutralizing anti-IFN-α monoclonal antibodies with broad reactivity against various IFN-α subtypes. The invention further relates to the use of such anti-IFN-α antibodies in the diagnosis and treatment of disorders associated with increased expression of IFN-α, in particular, autoimmune disorders such as insulin-dependent diabetes mellitus (IDDM) and systemic lupus erythematosus (SLE).

摘要翻译： 本发明一般涉及对各种IFN-α亚型具有广泛反应性的中和抗IFN-α单克隆抗体的产生和表征。 本发明还涉及这种抗-IFN-α抗体在诊断和治疗与增加的IFN-α表达有关的病症中的用途，特别是自身免疫性疾病如胰岛素依赖性糖尿病（IDDM）和系统性红斑狼疮 （SLE）。

公开(公告)号：US07564887B2

公开(公告)日：2009-07-21

申请号：US11066793

申请日：2005-02-25

申请人： Tzu-Yu Wang ,  Jin K. Kim

发明人： Tzu-Yu Wang ,  Jin K. Kim

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/18327 ,  H01S5/024 ,  H01S5/0422 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A vertical cavity surface emitting laser (VCSEL) includes independently definable current and optical confinement structures that provide unique forms of drive current and transverse mode confinement, respectively. The optical guide may be formed from an upper distributed Bragg reflector (DBR), as an etched mesa structure and/or as an intracavity optical guide. The current guide may include an ion-implanted region within the upper DBR. A dielectric structure is formed over the upper DBR and surrounds the optical guide.

摘要翻译： 垂直腔表面发射激光器（VCSEL）包括分别提供独特形式的驱动电流和横向限制的独立可定义的电流和光限制结构。 光导可以由上分布布拉格反射器（DBR）形成，作为蚀刻的台面结构和/或作为腔内光导。 当前引导件可以包括上部DBR内的离子注入区域。 在上DBR上形成电介质结构，并围绕光导。

公开(公告)号：US07433381B2

公开(公告)日：2008-10-07

申请号：US10606104

申请日：2003-06-25

申请人： Tzu-Yu Wang ,  Hoki Kwon ,  Jae-Hyun Ryou ,  Gyoungwon Park ,  Jin K. Kim

发明人： Tzu-Yu Wang ,  Hoki Kwon ,  Jae-Hyun Ryou ,  Gyoungwon Park ,  Jin K. Kim

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： B82Y20/00 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18372 ,  H01S5/2063 ,  H01S5/34313

摘要： A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

摘要翻译： 具有衬底的长波长垂直腔表面发射激光器，位于衬底上的第一反射镜，位于第一反射镜上的有源区，位于有源区上的第二反射镜。 第一反射镜可以具有几对层，其中一对或多对该反射镜具有氧化层。 衬底可以包括InP，并且镜组件可以与InP兼容。 第一反射镜中的一个或多个层可以通过沟槽状方法或其它布置被氧化。

公开(公告)号：US07085298B2

公开(公告)日：2006-08-01

申请号：US10697028

申请日：2003-10-31

申请人： Jin K. Kim

发明人： Jin K. Kim

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/18308 ,  H01S5/305 ,  H01S5/3095 ,  H01S5/34306

摘要： A vertical cavity surface emitting laser (VCSEL) includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; a tunnel junction over the active region, a p-layer of the tunnel junction including GaPSb or AlGaPSb; and a second mirror stack over the tunnel junction. The p-layer including GaPSb or AlGaPSb can be used to form a tunnel junction with an n-doped layer of InP or AlInAs, or with a lower bandgap material such as InGaAs, AlInGaAs or InGaAsP. Such tunnel junctions are especially useful for a long wavelength VCSEL.

摘要翻译： 垂直腔表面发射激光器（VCSEL）包括衬底; 衬底上的第一反射镜堆叠; 有源区，其在所述第一反射镜叠层上具有多个量子阱; 在有源区上的隧道结，包括GaPSb或AlGaPSb的隧道结的p层; 以及在隧道交界处的第二反射镜堆叠。 包括GaPSb或AlGaPSb的p层可以用于与InP或AlInAs的n掺杂层或者具有诸如InGaAs，AlInGaAs或InGaAsP的较低带隙材料形成隧道结。 这种隧道结对于长波长VCSEL特别有用。

公开(公告)号：US5546341A

公开(公告)日：1996-08-13

申请号：US441477

申请日：1995-05-15

申请人： Kang D. Suh ,  Jin K. Kim ,  Jeong H. Choi

发明人： Kang D. Suh ,  Jin K. Kim ,  Jeong H. Choi

IPC分类号： G11C16/04 ,  G11C16/02 ,  G11C16/06 ,  G11C16/12 ,  G11C16/16 ,  G11C17/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C16/00

CPC分类号： G11C16/16 ,  G11C16/12

摘要： A nonvolatile semiconductor memory device comprising an array of cell units, each cell unit including at least one memory transistor which has a floating gate and a control gate, the array being divided into a plurality of memory blocks each having a certain number of cell units. A selected memory block is erased by an erase voltage applied to a semiconductor substrate while unselected memory blocks are prevented from erasing by capacitive coupling of the erase voltage to floated word lines connected to control gates of memory transistors of the unselected memory blocks. In a program mode where a program voltage is applied to a selected word line of a selected memory block and a pass voltage is applied to unselected word lines of the selected memory block, channel regions and source and drain junctions of memory transistors of cell units in the selected memory block are charged to a program inhibition voltage. Channel regions and source and drain junctions of cell units associated with memory transistors programmed to the other binary data are discharged to be programmed while those of cell units associated with nonprogrammed memory transistors are maintained to the program inhibition voltage to prevent programming.

公开(公告)号：US5462432A

公开(公告)日：1995-10-31

申请号：US261801

申请日：1994-06-17

申请人： Jin K. Kim

发明人： Jin K. Kim

IPC分类号： F23Q2/16 ,  F23D11/36

CPC分类号： F23Q2/164

摘要： An ignition safety device in a gas lighter to reliably prevent ignition of the lighter when a safety button is in a locked position, and to allow ignition of the gas lighter when the safety button is moved from the first locked position to a second unlocked position. A projection of the safety button has an end surface that coacts with an end surface of a projection provided in the upper part of the gas lighter when the safety button is in its locked position. The projection in the upper part of the gas lighter is positioned so as to ensure that the two end surfaces securely contact each other. When the safety button is moved to the unlocked position, the projection of the safety button is not aligned with the projection in the upper part of the lighter and therefore, the ignition button of the lighter can be depressed to ignite the lighter.

摘要翻译： 一种气体打火机中的点火安全装置，当安全按钮处于锁定位置时可靠地防止打火机点火，并且当安全按钮从第一锁定位置移动到第二解锁位置时允许气体打火机点火。 当安全按钮处于其锁定位置时，安全按钮的突起具有与设置在气体打火机的上部中的突起的端面共同作用的端面。 气体打火机上部的突起被定位成确保两个端面彼此牢固地接触。 当安全按钮移动到解锁位置时，安全按钮的突起不与打火机上部的突起对准，因此可以按下打火机的点火按钮以点燃打火机。

公开(公告)号：US4320210A

公开(公告)日：1982-03-16

申请号：US215905

申请日：1980-12-12

申请人： Jin K. Kim ,  Clarence R. Murphy ,  Edward W. Smith

发明人： Jin K. Kim ,  Clarence R. Murphy ,  Edward W. Smith

IPC分类号： C08J3/00 ,  D01D5/40 ,  D01F6/04 ,  C08L23/26 ,  C08L23/06 ,  C08L29/04

CPC分类号： D01D5/40 ,  D01F6/04 ,  D21H13/14 ,  D21H5/202

摘要： Improved ethylene polymer fibrils are provided which are characterized in having:(a) a melt temperature of at least about 137.degree. C.,(b) a molecular weight of at least 250,000,(c) at least about 1.2 weight % of polyvinyl alcohol sorbed thereon, and(d) a zero-span breaking length of at least about 25,000.Water-laid sheets prepared from the fibrils have the following minimum factored values:Mullen Burst: 30 psiElmendorf Tear Strength: 300 grams/sheetTensile Strength: 15 lbs/inchElongation at Break: 40%

摘要翻译： 提供了改进的乙烯聚合物原纤维，其特征在于具有：（a）至少约137℃的熔融温度，（b）至少250,000的分子量，（c）至少约1.2重量％的聚乙烯醇 吸附在其上，（d）零跨度断裂长度至少约为25,000。 从原纤维制备的水性片材具有以下最小因子值：马伦爆裂：30 psi Elmendorf撕裂

公开(公告)号：US08723161B1

公开(公告)日：2014-05-13

申请号：US13352098

申请日：2012-01-17

申请人： John F. Klem ,  Jin K. Kim

发明人： John F. Klem ,  Jin K. Kim

IPC分类号： H01L31/00

CPC分类号： H01L31/1013

摘要： A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

摘要翻译： 双色检测器包括第一吸收层。 第一吸收层表现出以第一价带能量函数为特征的第一价带能量。 阻挡层在第一界面处与第一吸收层邻接。 势垒层表现出以第二价带能量函数为特征的第二价带能量。 阻挡层还在第二界面处邻接第二吸收层。 第二吸收层表现出第三价带能量，其特征在于第三价带能量函数。 第一和第二价带能量函数在第一接口处基本上在功能上或物理上连续，并且第二和第三价带能量函数在第二接口处基本上在功能上或物理上连续。