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    Strained-layer superlattice focal plane array having a planar structure
    2.
    发明授权
    Strained-layer superlattice focal plane array having a planar structure 有权
    具有平面结构的应变层超晶格焦平面阵列

    公开(公告)号：US07755079B2

    公开(公告)日：2010-07-13

    申请号：US11840263

    申请日：2007-08-17

    申请人： Jin K. Kim ,  Malcolm S. Carroll ,  Aaron Gin ,  Phillip F. Marsh ,  Erik W. Young ,  Michael J. Cich

    发明人： Jin K. Kim ,  Malcolm S. Carroll ,  Aaron Gin ,  Phillip F. Marsh ,  Erik W. Young ,  Michael J. Cich

    IPC分类号： H01L31/00

    CPC分类号： H01L27/14694 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L31/035236

    摘要： An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1−xSb with 0≦x≦0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 μm.

    摘要翻译： 公开了一种红外焦平面阵列（FPA），其利用由InAs和In x Ga 1-x Sb的交替层形成的应变层超晶格（SLS），其在GaSb衬底上外延生长0和nlE; x和nlE 0.5。 FPA避免使用台面结构来隔离每个光电检测器元件，而是使用形成在每个光电检测器内或周围的杂质掺杂区域进行电隔离。 这导致基本上平面的结构，其中SLS在被外延生长的钝化层封盖的光电检测器元件的2-D阵列的整个宽度上是不间断的，以减少或消除表面复合。 FPA具有在3-25μm波长范围内使用的应用。

    Strained-Layer Superlattice Focal Plane Array Having a Planar Structure
    4.
    发明申请
    Strained-Layer Superlattice Focal Plane Array Having a Planar Structure 有权
    具有平面结构的应变层超晶格焦平面阵列

    公开(公告)号：US20090045395A1

    公开(公告)日：2009-02-19

    申请号：US11840263

    申请日：2007-08-17

    申请人： Jin K. Kim ,  Malcolm S. Carroll ,  Aaron Gin ,  Phillip F. Marsh ,  Erik W. Young ,  Michael J. Cich

    发明人： Jin K. Kim ,  Malcolm S. Carroll ,  Aaron Gin ,  Phillip F. Marsh ,  Erik W. Young ,  Michael J. Cich

    IPC分类号： H01L31/0352

    CPC分类号： H01L27/14694 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L31/035236

    摘要： An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1−xSb with 0≦x≦0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 μm.

    摘要翻译： 公开了一种红外焦平面阵列（FPA），其利用由在GaSb衬底上外延生长的具有0 <= x <= 0.5的InAs和In x Ga 1-x Sb的交替层形成的应变层超晶格（SLS）。 FPA避免使用台面结构来隔离每个光电检测器元件，而是使用形成在每个光电检测器内或周围的杂质掺杂区域进行电隔离。 这导致基本上平面的结构，其中SLS在被外延生长的钝化层封盖的光电检测器元件的2-D阵列的整个宽度上是不间断的，以减少或消除表面复合。 FPA具有3-25 mum波长范围内的应用。

    Method of making an array of series connected solar cells on a single substrate
    5.
    发明授权
    Method of making an array of series connected solar cells on a single substrate 失效
    在单个基板上制造串联的太阳能电池阵列的方法

    公开(公告)号：US4428110A

    公开(公告)日：1984-01-31

    申请号：US306712

    申请日：1981-09-29

    申请人： Jin K. Kim

    发明人： Jin K. Kim

    IPC分类号： H01L27/142 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/046 ,  H01L31/18

    CPC分类号： H01L31/03921 ,  H01L31/022425 ,  H01L31/046 ,  Y02E10/50

    摘要： A method of making a series connected array of amorphous silicon solar cells on a single substrate includes forming a plurality of spaced conductive lower electrodes on the substrate. Metal electrode stripes are applied on each of the lower electrodes. A layer of amorphous silicon is formed over the lower electrodes, metal electrode stripes and any exposed portions of the surface of the substrate. A plurality of spaced upper conductive electrodes are formed over the amorphous silicon layer with each of the upper electrodes having a portion overlying the electrode stripe on the lower electrode of an adjacent cell. The array is heated to spike the electrode stripes completely through the amorphous silicon layer to contact the overlying upper electrode and thereby electrically connect the cells in series.

    摘要翻译： 在单个衬底上制造非晶硅太阳能电池的串联连接阵列的方法包括在衬底上形成多个间隔开的导电下电极。 金属电极条被施加在每个下电极上。 在下电极，金属电极条和衬底表面的任何暴露部分之间形成非晶硅层。 在非晶硅层之上形成多个间隔开的上导电电极，其中每个上电极具有覆盖相邻电池的下电极上的电极条的部分。 将阵列加热以使电极条完全穿过非晶硅层以接触上覆的上电极，从而串联电连接电池。

    Lateral conduction infrared photodetector
    8.
    发明授权
    Lateral conduction infrared photodetector 有权
    横向传导红外光电探测器

    公开(公告)号：US08022390B1

    公开(公告)日：2011-09-20

    申请号：US11840278

    申请日：2007-08-17

    申请人： Jin K. Kim ,  Malcolm S. Carroll

    发明人： Jin K. Kim ,  Malcolm S. Carroll

    IPC分类号： H01L31/0224

    CPC分类号： H01L31/1035 ,  H01L27/1446 ,  H01L31/111

    摘要： A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and InxGa1-xSb with 0≦x≦0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

    摘要翻译： 公开了一种用于检测波长范围为3-25μm的红外光的光检测器。 光电检测器具有由半导体层形成的台面结构，其包括由交替的InAs和In x Ga 1-x Sb与0＆nlE; x＆nlE; 0.5交替的层形成的超晶格。 杂质掺杂区域形成在台面结构的侧壁上，以提供可以提供增加的载流子迁移率和减少的表面复合的光生载流子的横向传导。 可以在光电检测器中使用可选的偏置电极来控制和改变其中的截止波长或耗尽宽度。 光电检测器可以形成为单色或多色设备，并且还可以用于形成与常规读出集成电路兼容的焦平面阵列。

    Metal-assisted DBRs for thermal management in VCSELs
    10.
    发明授权
    Metal-assisted DBRs for thermal management in VCSELs 有权
    用于VCSEL中热管理的金属辅助DBR

    公开(公告)号：US07860143B2

    公开(公告)日：2010-12-28

    申请号：US11026161

    申请日：2004-12-30

    申请人： Jin K. Kim ,  Tzu-Yu Wang ,  Gyoungwon Park

    发明人： Jin K. Kim ,  Tzu-Yu Wang ,  Gyoungwon Park

    IPC分类号： H01S3/08

    CPC分类号： B82Y20/00 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/3095 ,  H01S5/34306

    摘要： A VCSEL includes a substrate having a partially removed portion; a metal-assisted DBR having a metal layer and a first mirror stack, wherein the metal layer is located at the partially removed portion of the substrate; an active region having a plurality of quantum wells over the metal-assisted DBR; and a second mirror stack over the active region, wherein a number of alternating layers of the first mirror stack is substantially smaller than a number typically required for a VCSEL without the integrated metal reflector. Such a metal-assisted DBR is especially useful for a long-wavelength VCSEL on a InP substrate or a red-color VCSEL on a GaAs substrate.

    摘要翻译： VCSEL包括具有部分去除部分的基板; 具有金属层和第一反射镜叠层的金属辅助DBR，其中所述金属层位于所述基板的部分去除部分; 在金属辅助DBR上具有多个量子阱的有源区; 以及在所述有源区域上的第二反射镜堆叠，其中所述第一反射镜叠层的多个交替层比不具有所述集成金属反射器的VCSEL通常需要的数量小得多。 这种金属辅助DBR对于InP衬底上的长波长VCSEL或GaAs衬底上的红色VCSEL特别有用。