Abstract:
A magnetic tunnel junction cell having a free layer and first pinned layer with perpendicular anisotropy, the cell including a coupling layer between the free layer and a second pinned layer, the coupling layer comprising a phase change material switchable from an antiferromagnetic state to a ferromagnetic state. In some embodiments, at least one actuator electrode proximate the coupling layer transfers a strain from the electrode to the coupling layer to switch the coupling layer from the antiferromagnetic state to the ferromagnetic state. Memory devices and methods are also described.
Abstract:
A topographic profile of a structure is generated using atomic force microscopy. The structure is scanned such that an area of interest of the structure is scanned at a higher resolution than portions of the structure outside of the area of interest. An profile of the structure is then generated based on the scan. To correct skew and tilt of the profile, a first feature of the profile is aligned with a first axis of a coordinate system. The profile is then manipulated to align a second feature of the profile with a second axis of the coordinate system.
Abstract:
A method for creating a pattern on an exposure site of a material blank using an exposure apparatus includes providing a mask having a first mask pattern. The mask is positioned between the exposure apparatus and the material blank. The exposure site of the material blank is exposed. One or more additional exposure events are performed for patterning the exposure site of the material blank. Between each exposure event, the exposure site of the material blank is repositioned in a lateral direction with respect to the mask. Between successive exposure events involving the first mask pattern, there is a relative movement between the mask and the material blank of a distance less than or equal to a length of the first mask pattern.
Abstract:
A slider according to the present invention includes a slider body, a plurality of insulators, and conductive traces. The slider body has a first side and edges defined substantially perpendicular to the first side. The plurality of insulators are each adjacent to the first side of the slider body. The conductive traces are adjacent to each of the plurality of insulators and opposite the slider body.
Abstract:
A clamping apparatus for holding elements includes a first spring member and a second spring member. The first spring member has a rigid portion that applies the majority of force to the elements. The second spring member is attached to the first spring member. The second spring member is more flexible than the first spring member. The second spring member has a structure that accommodates dimensional variations in elements held by the clamping member.
Abstract:
A magnetic tunnel junction cell having a free layer and first pinned layer with perpendicular anisotropy, the cell including a coupling layer between the free layer and a second pinned layer, the coupling layer comprising a phase change material switchable from an antiferromagnetic state to a ferromagnetic state. In some embodiments, at least one actuator electrode proximate the coupling layer transfers a strain from the electrode to the coupling layer to switch the coupling layer from the antiferromagnetic state to the ferromagnetic state. Memory devices and methods are also described.
Abstract:
A slider according to the present invention includes a slider body, a plurality of insulators, and conductive traces. The slider body has a first side and edges defined substantially perpendicular to the first side. The plurality of insulators are each adjacent to the first side of the slider body. The conductive traces are adjacent to each of the plurality of insulators and opposite the slider body.
Abstract:
Recording heads for data storage systems are provided. Recording heads include a substrate layer made of a first material. The substrate layer has a bearing surface side. A tapered feature made of a second material is included on the bearing surface side. The first material is illustratively a multiphase material and the second material is illustratively diamond-like carbon.
Abstract:
A method of processing a stack, the method including depositing a fusible material on a first hardmask layer, the first hardmask layer disposed on a surface of a pre-processed stack, the pre-processed stack being disposed on at least a portion of a substrate; heating the fusible material layer to a temperature at or above its melting point to cause it to form a fusible material sphere, the fusible material sphere disposed on less than the entire first hardmask layer; etching the first hardmask layer, wherein the fusible material sphere prevents a portion of the first hardmask layer from etching, thereby forming a second hardmask layer; and etching the pre-processed stack, wherein at least the second hardmask layer prevents a portion of the pre-processed stack from etching, thereby forming a stack.
Abstract:
A topographic profile of a structure is generated using atomic force microscopy. The structure is scanned such that an area of interest of the structure is scanned at a higher resolution than portions of the structure outside of the area of interest. An profile of the structure is then generated based on the scan. To correct skew and tilt of the profile, a first feature of the profile is aligned with a first axis of a coordinate system. The profile is then manipulated to align a second feature of the profile with a second axis of the coordinate system.