公开(公告)号：US20250006671A1

公开(公告)日：2025-01-02

申请号：US18217123

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Marcel Arlan Wall ,  Hamid Azimi ,  Rahul N. Manepalli ,  Srinivas Venkata Ramanuja Pietambaram ,  Darko Grujicic ,  Steve Cho ,  Thomas L. Sounart ,  Gang Duan ,  Jung Kyu Han ,  Suddhasattwa Nad ,  Benjamin Duong ,  Shayan Kaviani

IPC: H01L23/00

Abstract: An intermediary layer, such as a dry deposition layer or a surface finish, is deposited on at least one exposed surface of surfaces within a layer of a semiconductor substrate. The intermediary layer is deposited on at least an electrically conductive material within a cavity in a layer. The intermediary layer is deposited using a chemical deposition process such as physical vapor deposition, chemical vapor deposition or sputtering.

公开(公告)号：US20240006298A1

公开(公告)日：2024-01-04

申请号：US17855040

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Steve Cho ,  Marcel Arlan Wall ,  Onur Ozkan ,  Ali Lehaf ,  Yi Yang ,  Jason Scott Steill ,  Gang Duan ,  Brandon C. Marin ,  Jeremy D. Ecton ,  Srinivas Venkata Ramanuja Pietambaram ,  Haifa Hariri ,  Bai Nie ,  Hiroki Tanaka ,  Kyle Mcelhinny ,  Jason Gamba ,  Venkata Rajesh Saranam ,  Kristof Darmawikarta ,  Haobo Chen

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49894 ,  H01L23/49816 ,  H01L21/4853 ,  H01L21/481 ,  H01L23/49838

Abstract: An electronic device may include an integrated circuit, for instance a semiconductor die. The electronic device may include a substrate having a first layer and a second layer. The first and second layers may include interconnects recessed below a surface of the substrate. The substrate may include a passivation layer directly coupled with portions of the interconnects. A solder resist material may at least partially cover portions of the passivation layer directly coupled with the first interconnect surface.

公开(公告)号：US11735558B2

公开(公告)日：2023-08-22

申请号：US17740501

申请日：2022-05-10

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Anurag Tripathi ,  Takeshi Nakazawa ,  Steve Cho

IPC: H01L23/538 ,  H01L23/00

CPC classification number: H01L24/30 ,  H01L23/5384 ,  H01L24/17 ,  H01L2224/1703

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US20230096835A1

公开(公告)日：2023-03-30

申请号：US17484519

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Kyle McElhinny ,  Bohan Shan ,  Hongxia Feng ,  Xiaoying Guo ,  Adam Schmitt ,  Jacob Vehonsky ,  Steve Cho ,  Leonel Arana

IPC: H01L23/00 ,  H01L21/60 ,  H01L23/538

Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes operational bridge bumps to electrically connect the die to a bridge within the substrate. The apparatus also includes dummy bumps adjacent the operational bridge bumps.

公开(公告)号：US20230095281A1

公开(公告)日：2023-03-30

申请号：US17484499

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Kyle McElhinny ,  Hongxia Feng ,  Xiaoying Guo ,  Steve Cho ,  Jung Kyu Han ,  Changhua Liu ,  Leonel Arana ,  Rahul Manepalli ,  Dingying Xu ,  Amram Eitan

IPC: H01L23/00 ,  H01L21/60 ,  H01L23/488 ,  H01L23/538

Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.

公开(公告)号：US11309239B2

公开(公告)日：2022-04-19

申请号：US17075533

申请日：2020-10-20

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Jung Kyu Han ,  Ali Lehaf ,  Steve Cho ,  Thomas Heaton ,  Hiroki Tanaka ,  Kristof Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

公开(公告)号：US20210391294A1

公开(公告)日：2021-12-16

申请号：US16902887

申请日：2020-06-16

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Anurag Tripathi ,  Takeshi Nakazawa ,  Steve Cho

IPC: H01L23/00 ,  H01L23/538

Abstract: Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US10854541B2

公开(公告)日：2020-12-01

申请号：US16554008

申请日：2019-08-28

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Jung Kyu Han ,  Ali Lehaf ,  Steve Cho ,  Thomas Heaton ,  Hiroki Tanaka ,  Kristof Darmawikarta ,  Robert Alan May ,  Sri Ranga Sai Boyapati

IPC: H01L27/082 ,  H01L23/498 ,  H01L23/538 ,  H01L25/18 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.