公开(公告)号：US20230402507A1

公开(公告)日：2023-12-14

申请号：US17838637

申请日：2022-06-13

Applicant: Intel Corporation

Inventor： Rohit Galatage ,  Willy Rachmady ,  Cheng-Ying Huang ,  Jami A. Wiedemer ,  Munzarin F. Qayyum ,  Nicole K. Thomas ,  Patrick Morrow ,  Marko Radosavljevic ,  Mauro J. Kobrinsky

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L27/0924 ,  H01L29/42392 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78696

Abstract: An integrated circuit structure includes a second device stacked vertically above a first device. The first device includes (i) a first source or drain region, (ii) a first source or drain contact coupled to the first source or drain region, and (iii) a first layer comprising a first metal and first one or more semiconductor materials between at least a section of the first source or drain region and the first source or drain contact. The second device includes (i) a second source or drain region, (ii) a second source or drain contact coupled to the second source or drain region, and (iii) a second layer comprising a second metal and second one or more semiconductor materials between at least a section of the second source or drain region and the second source or drain contact. In an example, the first metal and the second metal are different.

公开(公告)号：US20230395678A1

公开(公告)日：2023-12-07

申请号：US17831802

申请日：2022-06-03

Applicant: Intel Corporation

Inventor： Munzarin F. Qayyum ,  Nicole K. Thomas ,  Jami A. Wiedemer ,  Jack T. Kavalieros ,  Marko Radosavljevic ,  Willy Rachmady ,  Cheng-Ying Huang ,  Rohit Galatage ,  Nitesh Kumar ,  Kai Loon Cheong ,  Venkata Vasiraju

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L29/417 ,  H01L27/092

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/78618 ,  H01L29/78696 ,  H01L29/41733 ,  H01L27/0924

Abstract: A semiconductor structure includes an upper device stacked over a lower device. In an example, the upper device includes (i) a first source region, (ii) a first drain region, (iii) a body of semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. In an example, the lower device includes (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the lower device lacks a body of semiconductor material extending laterally from the second source region to the second drain region. In another example, the upper device lacks a body of semiconductor material extending laterally from the first source region to the first drain region.

公开(公告)号：US11664452B2

公开(公告)日：2023-05-30

申请号：US17085981

申请日：2020-10-30

Applicant: Intel Corporation

Inventor： Pratik A. Patel ,  Mark Y. Liu ,  Jami A. Wiedemer ,  Paul A. Packan

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L21/324 ,  H01L29/08 ,  H01L29/24 ,  H01L29/267

CPC classification number: H01L29/7848 ,  H01L21/2253 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66492 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

Abstract: A method including forming an opening in a junction region of a fin on and extending from a substrate; introducing a doped semiconductor material in the opening; and thermal processing the doped semiconductor material. A method including forming a gate electrode on a fin extending from a substrate; forming openings in the fin adjacent opposite sides of the gate electrode; introducing a doped semiconductor material in the openings; and thermally processing the doped semiconductor material sufficient to induce the diffusion of a dopant in the doped semiconductor material. An apparatus including a gate electrode transversing a fin extending from a substrate; and semiconductor material filled openings in junction regions of the fin adjacent opposite sides of the gate electrode, wherein the semiconductor material comprises a dopant.