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    Structures and Methods with Reduced Sensitivity to Surface Charge
    13.
    发明申请
    Structures and Methods with Reduced Sensitivity to Surface Charge 审中-公开
    具有降低表面电荷灵敏度的结构和方法

    公开(公告)号：US20160133694A1

    公开(公告)日：2016-05-12

    申请号：US14997284

    申请日：2016-01-15

    Applicant: Ideal Power Inc.

    Inventor： Richard A. Blanchard

    IPC: H01L29/06 ,  H01L29/73 ,  H01L29/739

    CPC classification number: H01L29/0619 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/402 ,  H01L29/404 ,  H01L29/72 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/747 ,  H03K17/66

    Abstract: The present application provides (in addition to more broadly applicable inventions) improvements which are particularly applicable to two-sided power semiconductor devices which use bipolar conduction. In this class of devices, the inventor has realized that two or three of the four (or more) semiconductor doping components which form the carrier-emission structures and control structures in the active device (array) portion of a two-sided power device can also be used, with surprising advantages, to form field-limiting rings around the active arrays on both surfaces. Most preferably, in some but not necessarily all embodiments, a shallow implant of one conductivity type is used to counterdope the surface of a well having the other conductivity type. This shallow implant, singly or in combination with another shallow implant of the same conductivity type, works to shield the well from the effects of excess charge at or above the surface of the semiconductor material.

    Abstract translation: 本申请提供了特别适用于使用双极性导通的双面功率半导体器件的（更广泛适用的发明）的改进。 在这类器件中，发明人已经意识到，在双面功率器件的有源器件（阵列）部分中形成载流子发射结构和控制结构的四个（或更多个）半导体掺杂元件中的两个或三个可以 也可以使用惊人的优点，在两个表面上的有源阵列周围形成限界环。 最优选地，在一些但不一定所有实施例中，使用一种导电类型的浅植入物来反射具有另一导电类型的阱的表面。 这种浅植入物，单独地或与另一种具有相同导电类型的浅植入物组合起作用，以防止阱受到半导体材料表面上或其上的过量电荷的影响。

    STRUCTURES AND METHODS WITH REDUCED SENSITIVITY TO SURFACE CHARGE
    16.
    发明申请
    STRUCTURES AND METHODS WITH REDUCED SENSITIVITY TO SURFACE CHARGE 有权
    具有降低表面电荷敏感性的结构和方法

    公开(公告)号：US20150214299A1

    公开(公告)日：2015-07-30

    申请号：US14599191

    申请日：2015-01-16

    Applicant: IDEAL POWER INC.

    Inventor： Richard A. Blanchard

    IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/40 ,  H01L29/732

    CPC classification number: H01L29/0619 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/402 ,  H01L29/404 ,  H01L29/72 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/747 ,  H03K17/66

    Abstract: The present application provides (in addition to more broadly applicable inventions) improvements which are particularly applicable to two-sided power semiconductor devices which use bipolar conduction. In this class of devices, the inventor has realized that two or three of the four (or more) semiconductor doping components which form the carrier-emission structures and control structures in the active device (array) portion of a two-sided power device can also be used, with surprising advantages, to form field-limiting rings around the active arrays on both surfaces. Most preferably, in some but not necessarily all embodiments, a shallow implant of one conductivity type is used to counterdope the surface of a well having the other conductivity type. This shallow implant, singly or in combination with another shallow implant of the same conductivity type, works to shield the well from the effects of excess charge at or above the surface of the semiconductor material.

    Abstract translation: 本申请提供了特别适用于使用双极性导通的双面功率半导体器件的（更广泛适用的发明）的改进。 在这类器件中，发明人已经意识到，在双面功率器件的有源器件（阵列）部分中形成载流子发射结构和控制结构的四个（或更多个）半导体掺杂元件中的两个或三个可以 也可以使用惊人的优点，在两个表面上的有源阵列周围形成限界环。 最优选地，在一些但不一定所有实施例中，使用一种导电类型的浅植入物来反射具有另一导电类型的阱的表面。 这种浅植入物，单独地或与另一种具有相同导电类型的浅植入物组合起作用，以防止阱受到半导体材料表面上或其上的过量电荷的影响。

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