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公开(公告)号：US20150372110A1
公开(公告)日：2015-12-24
申请号：US14836663
申请日：2015-08-26
Applicant: Huawei Technologies Co., Ltd.
Inventor： Jing Zhao
IPC: H01L29/66 , H01L21/266 , H01L21/308 , H01L21/02 , H01L21/311
CPC classification number: H01L29/6681 , H01L21/02636 , H01L21/266 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L29/6653 , H01L29/66795
Abstract: A semiconductor fin fabrication method includes: providing a substrate; selectively epitaxially growing a first mask layer in a predetermined zone on the substrate; selectively epitaxially growing a first epitaxial layer on the substrate by using the first mask layer as a mask; and removing the first mask layer and a part, under the first mask layer, of the substrate by using the first epitaxial layer as a mask and by using an anisotropic etching method, so as to form a fin under the first epitaxial layer. According to the foregoing solutions, a manner in which a selective epitaxial growth technology and an anisotropic etching technology are combined is used It can be ensured that a semiconductor fin and a surface of a gate oxidized layer are perpendicular to each other, roughness of a surface of the semiconductor fin is reduced, and a fin with a smooth side surface is formed.
Abstract translation: 半导体鳍片制造方法包括：提供基板; 在衬底上的预定区域选择性地外延生长第一掩模层; 通过使用第一掩模层作为掩模选择性地外延生长衬底上的第一外延层; 以及通过使用所述第一外延层作为掩模，并且通过使用各向异性蚀刻方法，将所述第一掩模层和所述第一掩模层下面的部分去除所述衬底，以在所述第一外延层下形成鳍状物。 根据上述方案，使用组合选择性外延生长技术和各向异性蚀刻技术的方式。可以确保半导体翅片和栅极氧化层的表面彼此垂直，表面的粗糙度 半导体鳍片的面积减小，并且形成具有光滑侧面的翅片。
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公开(公告)号：US20200334071A1
公开(公告)日：2020-10-22
申请号：US16753523
申请日：2017-10-13
Applicant: Huawei Technologies Co., Ltd.
Abstract: An application management method, a terminal, a computer readable storage medium, and a computer program product including an instruction are disclosed. The method includes: suspending a background application when the background application meets a preset condition and disconnecting a communication link between the background application and a communications module when suspending the background application. Applicable to management of background applications on terminals, this method is intended to resolve a problem existing in the prior art that a battery life of the terminal is reduced when a large quantity of applications run in the background.
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公开(公告)号：US10386914B2
公开(公告)日：2019-08-20
申请号：US15512454
申请日：2014-09-19
Applicant: Huawei Technologies Co., Ltd.
Inventor： Konggang Wei , Jing Zhao , Guanghua Zhong
IPC: G06F9/00 , G06F1/329 , G06F3/0488 , G06F3/0346 , G06F3/16 , G06F9/4401
Abstract: The present invention discloses a method which includes: receiving, in a standby state, application entry information entered by a user; obtaining, according to the application entry information, an identifier of an application program that needs to be run; waking an operating system and keeping, still in a dormant state, a dormant application program in application programs except the application program that needs to be run; and running, by using the operating system and according to the identifier of the application program that needs to be run, the application program that needs to be run The apparatus includes: a receiving module, an obtaining module, a wake-up module, and a running module. In the present invention, only the application program that needs to be run is run, while the dormant application program in the application programs except the application program that needs to be run is still kept in the dormant state.
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14.发明授权公开(公告)号：US10249744B2
公开(公告)日：2019-04-02
申请号：US15977309
申请日：2018-05-11
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Jing Zhao , Chen-Xiong Zhang
IPC: H01L29/78 , H01L29/66 , H01L21/02 , H01L21/311 , H01L29/786
Abstract: A tunnel field-effect transistor and a method for manufacturing a tunnel field-effect transistor is disclosed. Source regions are located on two sides of an oxide structure, an epitaxial layer is located on a surface on a side that is of the source region and that is away from the oxide structure, and a gate structure is located on a surface on a side that is of the epitaxial layer and that is away from the source region, so that a gate electric field direction of the tunnel field-effect transistor is the same as an electron tunneling direction, and carriers on a valence band of the source region tunnel to a conduction band of the epitaxial layer at relatively high tunneling efficiency, thereby generating a steep subthreshold swing and enabling a subthreshold swing value of the tunnel field-effect transistor to be lower than 60 mV/dec to consume relatively low power.
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公开(公告)号：US20180323291A1
公开(公告)日：2018-11-08
申请号：US16024562
申请日：2018-06-29
Applicant: Huawei Technologies Co., Ltd.
Inventor： Jing Zhao , Chen-Xiong Zhang
IPC: H01L29/66 , H01L27/06 , H01L49/02 , H01L27/088 , H01L29/06 , H01L23/535 , H01L21/8234
Abstract: A semiconductor device and a method for fabricating a semiconductor device are disclosed. The semiconductor device includes a tunnel field-effect transistor and a planar device. The tunnel field-effect transistor includes a first substrate and a first electrical element, and the first electrical element is formed on one side of the first substrate; the planar device includes a second substrate and a second electrical element, the second substrate and the first substrate are an integrated structure and form a main substrate, the second electrical element is formed on one side of the second substrate, and the second electrical element and the first electrical element are disposed on a same side of the main substrate; and the planar device includes any one of a metal oxide semiconductor transistor, a capacitor, and a resistor.
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Patent Agency Ranking
公开(公告)号：US12299517B2
公开(公告)日：2025-05-13
申请号：US18695334
申请日：2022-08-25
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Yunpeng Shen , Jiahui Chu , Tengfei Huang , Bo Jiang , Xuming Chen , Jing Zhao
IPC: G06K19/077
Abstract: The present disclosure relates to communication tags and electronic devices. One example communication tag includes a circuit board and a chip disposed on the circuit board. Two coils are formed on the circuit board. The two coils are respectively disposed on two different conducting layers of the circuit board. Optionally, the two coils are disposed in an intersecting manner. In addition, lines for feeding the two coils are disposed close to each other.
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公开(公告)号：US11849399B2
公开(公告)日：2023-12-19
申请号：US17667816
申请日：2022-02-09
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Jing Zhao
IPC: G06F1/3206 , H04W52/02
CPC classification number: H04W52/0264 , G06F1/3206
Abstract: This application discloses a method for reducing power consumption of a terminal, and a terminal, and relates to the field of terminal technologies, to resolve a problem of relatively high power consumption of a terminal caused by a background application program. The method includes: when a background power consumption current value of the terminal is greater than a preset current value, controlling, by the terminal, a target application program, to reduce the background power consumption current value, where the background power consumption current value is a sum of power consumption current values of all background application programs on the terminal. The target application program includes at least one or more of the following application programs: a background application program whose use frequency is lower than a preset frequency threshold, a background application program whose power consumption is greater than a preset power consumption threshold, and a background application program with abnormal power consumption. The method is applicable to a process of controlling a background application program.
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公开(公告)号：US11181968B2
公开(公告)日：2021-11-23
申请号：US16509190
申请日：2019-07-11
Applicant: Huawei Technologies Co., Ltd.
Inventor： Konggang Wei , Jing Zhao , Guanghua Zhong
IPC: G06F1/329 , G06F3/0488 , G06F3/0346 , G06F3/16 , G06F9/4401
Abstract: A method includes: receiving, in a standby state, application entry information entered by a user; obtaining, according to the application entry information, an identifier of an application program that needs to be run; waking an operating system and keeping, still in a dormant state, a dormant application program in application programs except the application program that needs to be run; and running, by using the operating system and according to the identifier of the application program that needs to be run, the application program that needs to be run. An apparatus includes: a receiving module, an obtaining module, a wake-up module, and a running module. In the present invention, only the application program that needs to be run is run, while the dormant application program in the application programs except the application program that needs to be run is still kept in the dormant state.
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公开(公告)号：US20190302985A1
公开(公告)日：2019-10-03
申请号：US16304563
申请日：2017-05-23
Applicant: Huawei Technologies Co., Ltd.
Inventor： Guanghua Zhong , Jing Zhao
Abstract: A data processing method and an apparatus to resolve problems that a response speed is low and image display is not even during dragging, caused when a terminal processes reported-point data. The method includes generating, by a touchscreen, reported-point data, reporting the reported-point data to a microprocessor according to a preset reported-point reporting rate, receiving, by the microprocessor, the reported-point data, and receiving a frame synchronization signal from an application processor, processing, by the microprocessor according to the frame synchronization signal, a first amount of reported-point data received within a preset time to obtain a second amount of reported-point data, transmitting the second amount of reported-point data to the application processor, receiving, by the application processor, the second amount of reported-point data, and generating an image display frame according to the second amount of reported-point data.
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公开(公告)号：US20170243960A1
公开(公告)日：2017-08-24
申请号：US15587781
申请日：2017-05-05
Applicant: Huawei Technologies Co., Ltd.
Inventor： Xichao Yang , Jing Zhao , Chen-Xiong Zhang
IPC: H01L29/66 , H01L29/786 , H01L21/8238 , H01L29/06 , H01L29/49 , H01L27/092 , H01L29/423
CPC classification number: H01L29/66977 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/823878 , H01L21/823885 , H01L27/092 , H01L29/0653 , H01L29/0676 , H01L29/08 , H01L29/42356 , H01L29/42392 , H01L29/4908 , H01L29/66356 , H01L29/7391 , H01L29/78 , H01L29/78618 , H01L29/78642 , H01L29/78651 , H01L29/78681 , H01L29/78684 , H01L29/78696
Abstract: A complementary tunneling field effect transistor and a manufacturing method are disclosed, which includes: a first drain region and a first source region that are disposed on a substrate, where they include a first dopant; a first channel that is disposed on the first drain region and a second channel that is disposed on the first source region; a second source region that is disposed on the first channel and a second drain region that is disposed on the second channel, where they include a second dopant; a first epitaxial layer that is disposed on the first drain region and the second source region, and a second epitaxial layer that is disposed on the second drain region and the first source region; and a first gate stack layer that is disposed on the first epitaxial layer, and a second gate stack layer that is disposed on the second epitaxial layer.
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