公开(公告)号：US09685304B2

公开(公告)日：2017-06-20

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  C01B35/00 ,  C01B35/06 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：US20160211137A1

公开(公告)日：2016-07-21

申请号：US14912380

申请日：2014-08-14

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/26546

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Abstract translation: 描述了用于在衬底中注入硅和/或硅离子的组合物，系统和方法，包括从相应的硅前体组合物产生硅和/或硅离子，以及在衬底中注入硅和/或硅离子。

公开(公告)号：US20160046849A1

公开(公告)日：2016-02-18

申请号：US14924221

申请日：2015-10-27

Applicant: Entegris, Inc.

Inventor： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

IPC: C09K3/00

CPC classification number: H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

公开(公告)号：US20150228486A1

公开(公告)日：2015-08-13

申请号：US14691904

申请日：2015-04-21

Applicant: ENTEGRIS, INC.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01L21/22 ,  H01L21/223

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract translation: 通过利用同位素富集的掺杂剂材料，或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

公开(公告)号：US10247363B2

公开(公告)日：2019-04-02

申请号：US15549875

申请日：2016-02-12

Applicant: ENTEGRIS, INC.

Inventor： Joseph D. Sweeney ,  Edward E. Jones ,  Joseph R. Despres ,  Richard S. Ray ,  Peter C. Van Buskirk ,  Edward A. Sturm ,  Chris Scannell

IPC: G06K19/06 ,  F17C13/02 ,  F17C11/00 ,  F17C13/00 ,  G06K19/07

Abstract: A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.

公开(公告)号：US20160013018A1

公开(公告)日：2016-01-14

申请号：US14861844

申请日：2015-09-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US20150380212A1

公开(公告)日：2015-12-31

申请号：US14768758

申请日：2014-03-03

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Joseph D. Sweeney ,  Ying Tang ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/22 ,  H01J37/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2225

Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.

Abstract translation: 描述了用于注入掺杂物种类的离子注入组合物，系统和方法。 描述了具体的硒掺杂剂源组合物，以及使用共流气体来实现植入系统特征如配方转变，束稳定性，源寿命，束均匀性，束电流和所有权成本的优点。

公开(公告)号：US09142387B2

公开(公告)日：2015-09-22

申请号：US14095575

申请日：2013-12-03

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: C23C16/00 ,  H01J37/317 ,  C01B35/00 ,  C01B35/06

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。