COLOR CHANGEABLE DEVICE
    14.
    发明申请
    COLOR CHANGEABLE DEVICE 有权
    彩色可变装置

    公开(公告)号:US20160246151A1

    公开(公告)日:2016-08-25

    申请号:US15007844

    申请日:2016-01-27

    CPC classification number: G02F1/155 G02F2001/1519

    Abstract: Provided is a color changeable device which includes a first substrate and a second substrate that are spaced apart from each other, a first transparent electrode disposed on the first substrate, a second transparent electrode disposed on the second substrate, an electrochromic layer disposed between the first transparent electrode and the second transparent electrode, an organic layer disposed between the first transparent electrode and the electrochromic layer. The organic layer may include a hole injection layer or an electron injection layer. The organic layer may further include a hole transport layer or an electron transport layer.

    Abstract translation: 提供了一种可变色装置,其包括彼此间隔开的第一基板和第二基板,设置在第一基板上的第一透明电极,设置在第二基板上的第二透明电极,设置在第一基板之间的电致变色层 透明电极和第二透明电极,设置在第一透明电极和电致变色层之间的有机层。 有机层可以包括空穴注入层或电子注入层。 有机层还可以包括空穴传输层或电子传输层。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    18.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20150349136A1

    公开(公告)日:2015-12-03

    申请号:US14611142

    申请日:2015-01-30

    Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices.

    Abstract translation: 根据本发明的实施例的制造半导体器件的方法可以包括提供包括布线区域和器件区域的牺牲衬底,在牺牲衬底上依次形成牺牲层和缓冲层,在缓冲器上形成薄膜晶体管 在器件区域内形成围绕薄膜晶体管的器件保护元件,在缓冲层上形成柔性衬底,并通过去除牺牲层来分离牺牲衬底来暴露缓冲层的表面。 由于可以直接使用典型的半导体工艺技术,因此可以提高工艺兼容性,并且可以制造具有高分辨率和高性能的半导体器件。 此外,由于薄膜晶体管被器件保护元件保护,所以可以防止半导体器件在柔性条件下的变形,从而提高半导体器件的可靠性。

    ELECTRONIC CIRCUIT AND METHOD OF FABRICATING THE SAME
    20.
    发明申请
    ELECTRONIC CIRCUIT AND METHOD OF FABRICATING THE SAME 有权
    电子电路及其制造方法

    公开(公告)号:US20140085840A1

    公开(公告)日:2014-03-27

    申请号:US13772288

    申请日:2013-02-20

    Abstract: Provided is an electronic circuit including a substrate having a flat device region and a curved interconnection region. A conduction line may extend along an uneven portion in the interconnection region and may be curved. The uneven portion and the conductive line may have a wavy shape. An external force applied to the electronic circuit may be absorbed by the uneven portion and the conductive line. The electronic device may not be affected by the external force. Therefore, functions of the electronic circuit may be maintained. A method of fabricating an electronic circuit according to the present invention may easily adjust areas and positions of the interconnection region and the device region.

    Abstract translation: 提供一种电子电路,其包括具有平坦器件区域和弯曲互连区域的衬底。 导线可以沿着互连区域中的不平坦部分延伸并且可以是弯曲的。 不平坦部分和导电线可以具有波浪形状。 施加到电子电路的外力可能被不平坦部分和导电线吸收。 电子设备可能不受外力的影响。 因此,可以保持电子电路的功能。 根据本发明的制造电子电路的方法可以容易地调整互连区域和器件区域的面积和位置。

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