公开(公告)号：US20250118357A1

公开(公告)日：2025-04-10

申请号：US18892187

申请日：2024-09-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sooji NAM ,  Sung Haeng CHO ,  Jeho NA ,  Chihun SUNG ,  Kyunghee CHOI ,  Jung Hoon HAN

IPC: G11C11/4096 ,  H10B12/00

Abstract: Provided is a semiconductor device including a substrate, a first transistor on the substrate, an interlayer insulating layer covering the first transistor, a second transistor on the interlayer insulating layer, and a storage node contact passing through the interlayer insulating layer, and connecting any one of source/drain electrodes of the first transistor and a gate electrode of the second transistor, wherein a first channel pattern of the first transistor may include an n-type oxide transistor, and a second channel pattern of the second transistor may include an p-type oxide transistor.

公开(公告)号：US20230083225A1

公开(公告)日：2023-03-16

申请号：US17943528

申请日：2022-09-13

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jong-Heon YANG ,  Seung Youl KANG ,  Yong Hae KIM ,  Hee-ok KIM ,  Jeho NA ,  Jaehyun MOON ,  Chan Woo PARK ,  Himchan OH ,  Seong-Mok CHO ,  Sung Haeng CHO ,  Ji Hun CHOI ,  Jae-Eun PI ,  Chi-Sun HWANG

IPC: H01L27/32 ,  G09G3/3266 ,  G09G3/3225

Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

公开(公告)号：US20170213904A1

公开(公告)日：2017-07-27

申请号：US15414156

申请日：2017-01-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeho NA ,  Hyung Seok LEE ,  Chi Hoon JUN ,  Sang Choon KO ,  Myungjoon KWACK ,  Young Rak PARK ,  Woojin CHANG ,  Hyun-Gyu JANG ,  Dong Yun JUNG

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20 ,  H01L23/31

CPC classification number: H01L29/7787 ,  H01L23/315 ,  H01L23/3171 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.

公开(公告)号：US20170077282A1

公开(公告)日：2017-03-16

申请号：US15265647

申请日：2016-09-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok LEE ,  Ki Hwan KIM ,  Sang Choon KO ,  Zin-Sig KIM ,  Jeho NA ,  EUN SOO NAM ,  Young Rak PARK ,  Junbo PARK ,  Chi Hoon JUN ,  Dong Yun JUNG

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract translation: 提供一种电子设备。 该电子器件包括依次堆叠在基板上的第一半导体层和第二半导体层以及设置在第二半导体层上的源电极，栅电极和漏电极。 电子装置还包括电场连接到源极并且朝向漏电极延伸的场板，其中当场板越靠近漏电极时，场板越靠近衬底。

公开(公告)号：US20160260653A1

公开(公告)日：2016-09-08

申请号：US14872868

申请日：2015-10-01

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Chi Hoon JUN ,  Jeho NA ,  Dong Yun JUNG ,  Sang Choon KO ,  Eun Soo NAM ,  Hyung Seok LEE

IPC: H01L23/467

CPC classification number: H01L23/467

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Abstract translation: 提供一种半导体器件。 该半导体器件包括：基板，其包括悬臂，该悬臂构造成通过动态移动产生冷却介质流;基板上的有源区域，设置有电子器件;绝缘层，设置成与基板上的有源区间隔开; 绝缘层上的下电极，下电极上的压电薄膜和压电薄膜上的上电极。