Dual mode display devices and methods of manufacturing the same
    15.
    发明授权
    Dual mode display devices and methods of manufacturing the same 有权
    双模显示装置及其制造方法

    公开(公告)号:US08987718B2

    公开(公告)日:2015-03-24

    申请号:US13763383

    申请日:2013-02-08

    CPC classification number: H01L51/5203 G02F2201/44 H01L27/3232 H01L51/56

    Abstract: Disclosed are dual mode display devices and methods of manufacturing the same. The dual mode display device may include a first substrate, a first electrode on the first substrate, a second substrate opposite to the first electrode and the first substrate, a second electrode between the second substrate and the first electrode, a third electrode between the first electrode and the second electrode, an optic switching layer between the first electrode and the third electrode, and an organic light-emitting layer between the second electrode and the third electrode.

    Abstract translation: 公开了双模式显示装置及其制造方法。 双模显示装置可以包括第一基板,第一基板上的第一电极,与第一电极和第一基板相对的第二基板,第二基板和第一电极之间的第二电极,第一电极之间的第一电极 电极和第二电极,在第一电极和第三电极之间的光学开关层,以及在第二电极和第三电极之间的有机发光层。

    METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES
    18.
    发明申请
    METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES 有权
    制造具有多层结构的透明晶体管的方法

    公开(公告)号:US20130189815A1

    公开(公告)日:2013-07-25

    申请号:US13792395

    申请日:2013-03-11

    Abstract: A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

    Abstract translation: 一种制造透明晶体管的方法,所述透明晶体管包括形成在所述基板上的基板,源极和漏极,每个具有下透明层,金属层和上透明层的多层结构,在所述源极和漏极之间形成的沟道 电极和与通道对准的栅电极。 下透明层或上透明层由与通道相同的透明半导体层形成。

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