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公开(公告)号：US20220068899A1
公开(公告)日：2022-03-03
申请号：US17204562
申请日：2021-03-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Zhijun LV , Feng Zhang , Liwen Dong , Wenqu Liu , Xiaoxin Song , Zhao Cui , Detian Meng , Libo Wang , Dongfei Hou , Qi Yao
Abstract: The present application discloses a display panel and a preparation method thereof. The display panel includes a base substrate provided with a circuit area and a light-emitting area; a driving circuit located in the circuit area of the base substrate; an organic insulating layer covering the light-emitting area of the base substrate; a light-emitting element embedded in the organic insulating layer, where an overlap area between the orthographic projection of the light-emitting element on the base substrate and the orthographic projection of the driving circuit on the base substrate is 0; and a first lapping electrode located on the side, facing away from the base substrate, of the light-emitting element, where the light-emitting element is electrically connected to the driving circuit through the first lapping electrode.
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公开(公告)号：US11201120B2
公开(公告)日：2021-12-14
申请号：US16070271
申请日：2017-12-14
Applicant: BOE Technology Group Co., Ltd.
Inventor： Qi Yao , Zhanfeng Cao , Feng Zhang , Jiushi Wang
IPC: H01L23/552 , H01L21/02 , H01L21/3213 , H01L27/12 , H01L29/66 , H01L29/786
Abstract: In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.
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公开(公告)号：US11133488B2
公开(公告)日：2021-09-28
申请号：US16639927
申请日：2019-10-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Chuanxiang Xu , Shi Shu , Qi Yao , Guangcai Yuan
Abstract: A display substrate is provided. The display substrate includes a functional area; and a buffer area substantially surrounding the functional area, wherein the functional area includes a display area and a peripheral area between the display area and the buffer area; one or more insulating layers on a base substrate, and in the functional area and the buffer area; and an encapsulating structure on a side of the one or more insulating layers away from the base substrate, and encapsulating a plurality of light emitting elements in the display area. The one or more insulating layers include a first part in the functional area and at least a second part in the buffer area. The second part is spaced apart from the first part. The display substrate further includes a first enclosure ring on a side of the second part away from the base substrate.
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公开(公告)号：US11088352B2
公开(公告)日：2021-08-10
申请号：US16429531
申请日：2019-06-03
Applicant: BOE Technology Group Co., Ltd.
Inventor： Wenqu Liu , Feng Zhang , Qi Yao , Zhijun Lv , Liwen Dong , Shizheng Zhang , Ning Dang , Xiaoxin Song , Zhao Cui
Abstract: A display substrate, a manufacturing method thereof, and a display device are provided, in the field of display technology. The display substrate includes a base substrate, and a thin-film transistor, a light-emitting device, an encapsulation structure, and a conductive film layer sequentially disposed on the base substrate in a direction away from the base substrate. Since the display substrate includes a conductive film layer on a side of the encapsulation structure away from the base substrate, when the protective film layer on the side of the conductive film layer away from the base substrate is peeled off, static electricity generated by the separation of the film layer can be released to the conductive film layer, avoiding electron transition to the active layer of the thin-film transistor in the display substrate to cause offset of the threshold voltage of the thin-film transistor. The display brightness uniformity of the display substrate can be ensured.
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公开(公告)号：US20210225975A1
公开(公告)日：2021-07-22
申请号：US16765232
申请日：2019-11-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanan Niu , Jiushi Wang , Zhanfeng Cao , Qi Yao , Feng Zhang , Wusheng Li , Feng Guan , Lei Chen , Hongwei Tian
IPC: H01L27/32
Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.
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Patent Agency Ranking
公开(公告)号：US20210135155A1
公开(公告)日：2021-05-06
申请号：US16639927
申请日：2019-10-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Chuanxiang Xu , Shi Shu , Qi Yao , Guangcai Yuan
Abstract: A display substrate is provided. The display substrate includes a functional area; and a buffer area substantially surrounding the functional area, wherein the functional area includes a display area and a peripheral area between the display area and the buffer area; one or more insulating layers on a base substrate, and in the functional area and the buffer area; and an encapsulating structure on a side of the one or more insulating layers away from the base substrate, and encapsulating a plurality of light emitting elements in the display area. The one or more insulating layers include a first part in the functional area and at least a second part in the buffer area. The second part is spaced apart from the first part. The display substrate further includes a first enclosure ring on a side of the second part away from the base substrate.
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公开(公告)号：US10910498B2
公开(公告)日：2021-02-02
申请号：US14772876
申请日：2014-11-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Zhanfeng Cao , Feng Zhang , Qi Yao
IPC: H01L29/786 , H01L27/12 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/66 , H01L21/311 , H01L21/3105 , H01L21/027
Abstract: An array substrate, a method for fabricating the same and a display device are disclosed. The method for fabricating the array substrate includes: forming a pattern of a gate electrode, a pattern of a gate insulation layer and a pattern of a metal oxide semiconductor active layer on a base substrate; forming an etch stop layer; forming a pattern of a pixel electrode first, and then forming a pattern of a source electrode and a pattern of a drain electrode; wherein the pattern of the pixel electrode is connected to the pattern of the metal oxide semiconductor active layer through the pattern of the source electrode or the pattern of the drain electrode. The method can prevent the problem that the pattern of the pixel electrode failing to connect to the pattern of the source electrode or the pattern of the drain electrode.
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公开(公告)号：US20210013153A1
公开(公告)日：2021-01-14
申请号：US16070271
申请日：2017-12-14
Applicant: BOE Technology Group Co., Ltd.
Inventor： Qi Yao , Zhanfeng Cao , Feng Zhang , Jiushi Wang
IPC: H01L23/552 , H01L27/12
Abstract: In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.
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19.发明申请公开(公告)号：US20200326569A1
公开(公告)日：2020-10-15
申请号：US16097764
申请日：2018-03-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Haixu Li , Zhanfeng Cao , Qi Yao , Jianguo Wang , Da Lu , Shuilang Dong , Qingzhao Liu , Shengguang Ban
IPC: G02F1/1368 , G02F1/1362 , H01L27/12
Abstract: An array substrate, a method for manufacturing the same, a display panel, and a display device are provided. The array substrate comprises a substrate, a light shielding layer on the substrate, and a transistor arranged at a side of the light shielding layer away from the substrate, the transistor including an active layer.
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公开(公告)号：US20200185535A1
公开(公告)日：2020-06-11
申请号：US16528622
申请日：2019-08-01
Applicant: BOE Technology Group Co., Ltd.
Inventor： Feng Guan , Guangcai Yuan , Zhi Wang , Chen Xu , Qi Yao , Zhanfeng Cao , Ce Ning , Woobong Lee , Lei Chen
IPC: H01L29/786 , H01L27/12
Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.
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