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11.发明授权公开(公告)号：US11520094B2
公开(公告)日：2022-12-06
申请号：US16640195
申请日：2019-05-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Shuilang Dong , Da Lu , Qingzhao Liu , Guoqiang Wang , Zhanfeng Cao , Jiushi Wang
Abstract: The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.
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公开(公告)号：US11276739B2
公开(公告)日：2022-03-15
申请号：US16765232
申请日：2019-11-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanan Niu , Jiushi Wang , Zhanfeng Cao , Qi Yao , Feng Zhang , Wusheng Li , Feng Guan , Lei Chen , Hongwei Tian
IPC: H01L27/32
Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.
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公开(公告)号：US10461178B2
公开(公告)日：2019-10-29
申请号：US15329212
申请日：2016-07-25
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Shi Shu , Jing Feng , Chuanxiang Xu , Xiaolong He , Jiushi Wang
IPC: H01L21/02 , H01L29/786 , H01L29/66 , H01L27/12
Abstract: A method for manufacturing an array substrate, an array substrate and a display panel are provided. The method includes forming patterns of a gate metal layer and a gate insulating layer successively on a base plate, forming a pattern of a semiconductor layer, where the pattern of the semiconductor layer comprises a pattern of an active region and a pattern of a pixel electrode region, the semiconductor layer comprises an insulative oxide layer and a semiconductive oxide layer stacked on the insulative oxide layer, and the insulative oxide layer is located between the gate insulating layer and the semiconductive oxide layer, forming a pattern of a source and drain metal layer, and subjecting the semiconductive oxide layer in the pixel electrode region to plasma treatment, to convert the semiconductive oxide layer in the pixel electrode region into a conductor.
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公开(公告)号：US10205029B2
公开(公告)日：2019-02-12
申请号：US15511683
申请日：2016-01-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiushi Wang , Dalin Cui
IPC: H01L29/786 , G02F1/1333 , H01L27/12 , H01L29/10
Abstract: A TFT, a manufacturing method thereof, and a display device are provided. The TFT includes a semiconductor layer and an etch-stop layer merely covering a channel region of the semiconductor layer. The semiconductor layer and the etch-stop layer are formed through a single patterning process.
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15.发明公开公开(公告)号：US20240136336A1
公开(公告)日：2024-04-25
申请号：US17769825
申请日：2021-06-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xinhong Lu , Xiaoyan Zhu , Chao Liu , Shuilang Dong , Jiushi Wang , Liuqing Li
IPC: H01L25/075 , H01L25/16 , H01L33/62
CPC classification number: H01L25/0753 , H01L25/167 , H01L33/62 , H01L2933/0066
Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.
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Patent Agency Ranking
公开(公告)号：US11527676B2
公开(公告)日：2022-12-13
申请号：US16760475
申请日：2019-10-29
Applicant: BOE Technology Group Co., Ltd.
Inventor： Guoqiang Wang , Jiushi Wang , Qingzhao Liu
Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.
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公开(公告)号：US11201120B2
公开(公告)日：2021-12-14
申请号：US16070271
申请日：2017-12-14
Applicant: BOE Technology Group Co., Ltd.
Inventor： Qi Yao , Zhanfeng Cao , Feng Zhang , Jiushi Wang
IPC: H01L23/552 , H01L21/02 , H01L21/3213 , H01L27/12 , H01L29/66 , H01L29/786
Abstract: In embodiments of the present disclosure, there is provided a display substrate assembly including: a base substrate; a light shielding layer on the base substrate; and an active layer of a thin film transistor, above the base substrate. An orthographic projection of the active layer on the base substrate in a thickness direction of the base substrate is within an orthographic projection of the light shielding layer on the base substrate in the thickness direction of the base substrate, and the light shielding layer includes an ion-doped amorphous silicon layer. In embodiments of the present disclosure, there is also provided a method of manufacturing a display substrate assembly and a display apparatus including the display substrate assembly.
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公开(公告)号：US20210226091A1
公开(公告)日：2021-07-22
申请号：US16760475
申请日：2019-10-29
Applicant: BOE Technology Group Co., Ltd.
Inventor： Guoqiang Wang , Jiushi Wang , Qingzhao Liu
Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.
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公开(公告)号：US20210225975A1
公开(公告)日：2021-07-22
申请号：US16765232
申请日：2019-11-26
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanan Niu , Jiushi Wang , Zhanfeng Cao , Qi Yao , Feng Zhang , Wusheng Li , Feng Guan , Lei Chen , Hongwei Tian
IPC: H01L27/32
Abstract: A display substrate is provided. The display substrate includes a substrate (1), a first transistor (2) and a second transistor (3) on the substrate (1), directions of intrinsic threshold voltage shifts of the first transistor (2) and the second transistor (3) being opposite; and a shift adjustment structure (4) on the substrate (1). The shift adjustment structure (4) may be configured to input adjustment signals to the first transistor (2) and the second transistor (3) respectively to make threshold voltages of the first transistor (2) and the second transistor (3) shift in directions opposite to the directions of their intrinsic threshold voltage shifts respectively.
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公开(公告)号：US11022736B2
公开(公告)日：2021-06-01
申请号：US16408973
申请日：2019-05-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Qingzhao Liu , Jiushi Wang , Shuilang Dong , Guoqiang Wang
Abstract: An embodiment of this disclosure discloses a metal wire grid comprising: a patterned metal layer and a patterned antireflective layer located on the patterned metal layer, wherein a surface of the antireflective layer distal to the patterned metal layer has a plurality of continuous pits. Embodiments of this disclosure further disclose a method of manufacturing a metal wire grid and a display panel.
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