公开(公告)号：US09786500B2

公开(公告)日：2017-10-10

申请号：US15038350

申请日：2015-12-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenqing Xu ,  Hongwei Tian ,  Chunping Long

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  C30B1/02 ,  C30B28/02 ,  C30B29/06

CPC classification number: H01L21/02686 ,  C30B1/023 ,  C30B28/02 ,  C30B29/06 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/6675 ,  H01L29/78603 ,  H01L29/78672 ,  H01L29/78696

Abstract: The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

公开(公告)号：US20170103890A1

公开(公告)日：2017-04-13

申请号：US15038350

申请日：2015-12-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenqing Xu ,  Hongwei Tian ,  Chunping Long

IPC: H01L21/02 ,  H01L29/786 ,  C30B29/06 ,  C30B1/02 ,  C30B28/02 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L21/02686 ,  C30B1/023 ,  C30B28/02 ,  C30B29/06 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/6675 ,  H01L29/78603 ,  H01L29/78672 ,  H01L29/78696

Abstract: The present application discloses a method of fabricating a polycrystalline semiconductor layer, comprising forming a heat storage layer; forming a buffer layer on the heat storage layer; forming a first amorphous semiconductor layer on a side of the buffer layer distal to the heat storage layer; and crystallizing the first amorphous semiconductor layer to form a first polycrystalline semiconductor layer.

公开(公告)号：US20170040430A1

公开(公告)日：2017-02-09

申请号：US14907778

申请日：2015-08-24

Applicant: BOE Technology Group Co. Ltd.

Inventor： Hongwei Tian ,  Kaihong Ma ,  Wenqing Xu ,  Yueping Zuo ,  Xiaowei Xu

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/49 ,  H01L27/12 ,  H01L29/417

CPC classification number: H01L29/42384 ,  H01L21/28008 ,  H01L23/50 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/41 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/786

Abstract: A conductive structure and a manufacturing method thereof, an array substrate and a display device. The conductive structure includes a plurality of first metal layers made of aluminum, and between every two first metal layers that are adjacent, there is also provided a second metal layer, which is made of a metal other than aluminum. With the conductive structure, the hillock phenomenon that happens to the conductive structure when it is heated can be decreased without reducing the overall thickness of the conductive structure.

Abstract translation: 导电结构及其制造方法，阵列基板和显示装置。 导电结构包括多个由铝制成的第一金属层，并且在邻近的每两个第一金属层之间，还提供由铝以外的金属制成的第二金属层。 利用导电结构，可以降低导电结构在被加热时发生的小丘现象，而不会降低导电结构的整体厚度。

公开(公告)号：US11079670B2

公开(公告)日：2021-08-03

申请号：US16334870

申请日：2018-09-21

Applicant: Beijing BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Mingxuan Liu ,  Huibin Guo ,  Yongzhi Song ,  Xiaoxiang Zhang ,  Wenqing Xu ,  Zumou Wu ,  Xiaolong Li

IPC: G03F1/26

Abstract: Disclosed are a manufacturing method of a phase shift mask and a phase shift mask. The manufacturing method of a phase shift mask includes: forming a pattern of metal shielding layer on a base substrate; forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer; patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer; and etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer.

公开(公告)号：US10551696B2

公开(公告)日：2020-02-04

申请号：US15970803

申请日：2018-05-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

Inventor： Xiaolong Li ,  Xiaoxiang Zhang ,  Huibin Guo ,  Mingxuan Liu ,  Wenqing Xu ,  Zumou Wu ,  Yongzhi Song

IPC: H01L21/027 ,  G02F1/1343 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1335 ,  H01L21/3213

Abstract: The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.

公开(公告)号：US20190094597A1

公开(公告)日：2019-03-28

申请号：US15970803

申请日：2018-05-03

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

Inventor： Xiaolong Li ,  Xiaoxiang Zhang ,  Huibin Guo ,  Mingxuan Liu ,  Wenqing Xu ,  Zumou Wu ,  Yongzhi Song

IPC: G02F1/1343 ,  H01L21/027 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786

Abstract: The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.

公开(公告)号：US11385537B2

公开(公告)日：2022-07-12

申请号：US16343756

申请日：2018-10-26

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoxiang Zhang ,  Mingxuan Liu ,  Huibin Guo ,  Yongzhi Song ,  Xiaolong Li ,  Wenqing Xu ,  Zumou Wu

IPC: G03F1/32 ,  G03F1/30 ,  G03F1/36 ,  G03F1/26 ,  H01L21/027

Abstract: A phase shift mask includes a transparent substrate and light-shielding portions. The light-shielding portions include a first light-shielding portion, and over one side of it, a first compensating light-shielding portion, which has a first distance to the first light-shielding portion and a first width smaller than a resolution of an exposing machine utilized for an exposure process using the phase shift mask. The light-shielding portions can further include a second compensating light-shielding portion, having a second distance to another side of the first light-shielding portion and a second width smaller than the resolution of the exposing machine. The first distance and the second distance respectively allow the first and the second compensating light-shielding portion to reduce an exposure at a region corresponding to two sides of the first light-shielding portion during the exposure process. A method manufacturing an electronic component utilizing the phase shift mask is also provided.

公开(公告)号：US20210333704A1

公开(公告)日：2021-10-28

申请号：US16346192

申请日：2018-11-01

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

Inventor： Xiaoxiang Zhang ,  Mingxuan Liu ,  Huibin Guo ,  Wenqing Xu ,  Xiaolong Li ,  Zumou Wu ,  Yongzhi Song

IPC: G03F1/26 ,  H01L29/66 ,  H01L27/12

Abstract: A display panel includes a method of fabricating an array substrate. The method includes forming a metal layer (1) on a substrate, and patterning the metal layer (1) using a phase shift mask to form a pattern of metal wiring. The phase shift mask includes a substrate and a wiring light shielding portion (02) on the substrate (01). The wiring light shielding portion (02) includes a light shielding region (021) and a phase shift region (022). In a direction perpendicular to the extending direction of the wiring light shielding portion (02) a width of the light shielding region (021) is larger than a width of the pattern of the metal wiring formed by the wiring light shielding portion (02).

公开(公告)号：US11069719B2

公开(公告)日：2021-07-20

申请号：US16503053

申请日：2019-07-03

Applicant: BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenqing Xu ,  Xiaolong Li ,  Xiaoxiang Zhang ,  Mingxuan Liu ,  Zumou Wu ,  Huibin Guo ,  Yongzhi Song

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362

Abstract: An array substrate includes a base substrate, a plurality of signal lines disposed at a side of the base substrate, and an organic layer disposed at a side of the plurality of signal lines facing away from the base substrate. The organic layer includes at least one auxiliary portion and a reference portion surrounding the at least one auxiliary portion, and a thickness of each auxiliary portion is less than a thickness of the reference portion.

公开(公告)号：US20200174359A1

公开(公告)日：2020-06-04

申请号：US16334870

申请日：2018-09-21

Applicant: Beijing BOE Display Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Mingxuan Liu ,  Huibin Guo ,  Yongzhi Song ,  Xiaoxiang Zhang ,  Wenqing Xu ,  Zumou Wu ,  Xiaolong Li

IPC: G03F1/26

Abstract: Disclosed are a manufacturing method of a phase shift mask and a phase shift mask. The manufacturing method of a phase shift mask includes: forming a pattern of metal shielding layer on a base substrate; forming a phase shift layer and a first photoresist layer in sequence on the pattern of metal shielding layer; patterning the first photoresist layer with the pattern of metal shielding layer serving as a mask to form a pattern of first photoresist layer; and etching the phase shift layer with the pattern of first photoresist layer serving as a mask to form a pattern of phase shift layer.