公开(公告)号：US20190051671A1

公开(公告)日：2019-02-14

申请号：US16032568

申请日：2018-07-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shengguang BAN ,  Zhanfeng CAO ,  Qi YAO ,  Dapeng XUE

IPC: H01L27/12 ,  H01L31/0216

Abstract: A display substrate, a method of manufacturing the same and a display device are provided. The display substrate includes a base substrate, a plurality of metal particles dispersedly disposed on the base substrate and forming a discontinuous film, a light shielding layer disposed on a side of the base substrate on which the plurality of metal particles are disposed and covering the plurality of metal particles, and a thin film transistor located on a side of the light shielding layer far away from the base substrate.

公开(公告)号：US20190006482A1

公开(公告)日：2019-01-03

申请号：US15941195

申请日：2018-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu LI ,  Zhanfeng CAO ,  Qi YAO ,  Jianguo WANG ,  Dapeng XUE

IPC: H01L29/49 ,  H01L29/45 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate having a gate metal layer on a surface of a substrate; a gate insulating layer on the substrate and covering the gate; an active layer on a surface of the gate insulating layer away from the substrate; a source comprising a source metal layer on a surface of the active layer away from the substrate; and a drain having a drain metal layer on a surface of the active layer away from the substrate, wherein the gate, the source or the drain further includes a metal complex layer on a surface of the gate metal layer, the source metal layer or the drain metal layer away from the substrate.

公开(公告)号：US20250113541A1

公开(公告)日：2025-04-03

申请号：US18291389

申请日：2022-08-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG ,  Liping LEI ,  Dongfang WANG ,  Zhengliang LI

IPC: H10D30/67 ,  H10D30/01

Abstract: An oxide thin film transistor, a preparation method thereof, and an electronic device are provided. The oxide thin film transistor includes a base substrate, a gate electrode and a metal oxide semiconductor layer, a gate insulation layer arranged between the metal oxide semiconductor layer and the gate electrode; the gate insulation layer includes a silicon oxide insulation layer and a silicon nitride layer, the silicon nitride layer adopts a single-layer structure or include a plurality of silicon nitride sublayers which are sequentially stacked, the silicon oxide insulation layer is between the silicon nitride layer and the metal oxide semiconductor layer; at least a part of a region in the silicon nitride layer satisfies that the percentage content of Si—H bonds in the sum of Si—N bonds, N—H bonds and Si—H bonds is not more than 7.

公开(公告)号：US20250098225A1

公开(公告)日：2025-03-20

申请号：US18960308

申请日：2024-11-26

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US20240097042A1

公开(公告)日：2024-03-21

申请号：US17781773

申请日：2021-06-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Nianqi YAO ,  Hehe HU ,  Liping LEI ,  Dongfang WANG ,  Dapeng XUE ,  Shuilang DONG ,  Zhengliang LI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742

Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

公开(公告)号：US20220077264A1

公开(公告)日：2022-03-10

申请号：US17468638

申请日：2021-09-07

Applicant: FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng XUE ,  Guangcai YUAN ,  Xiaochun XU ,  Zheng LIU ,  Liangliang LI ,  Shuilang DONG ,  Lizhong WANG ,  Niangi YAO

IPC: H01L27/32

Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.

公开(公告)号：US20210334499A1

公开(公告)日：2021-10-28

申请号：US16495547

申请日：2019-04-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dapeng XUE

IPC: G06K9/00 ,  H01L27/146

Abstract: A fingerprint recognition device includes a first substrate and at least one photosensitive detector on the first substrate, each of the at least one photosensitive detector including a first electrode, a photosensitive layer on the first electrode, and a second electrode on the photosensitive layer. A side of the photosensitive layer facing away from the first electrode has a curved shape.

公开(公告)号：US20190148561A1

公开(公告)日：2019-05-16

申请号：US16036099

申请日：2018-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shengguang BAN ,  Zhanfeng CAO ,  Qi YAO ,  Dapeng XUE

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/027

Abstract: The present disclosure provides a method for manufacturing an LTPS thin film transistor which includes: forming a light shielding pattern and an active layer of the LTPS thin film transistor on a base substrate through one single patterning process, in which an orthogonal projection of the active layer on the base substrate falls within an orthogonal projection of the light shielding pattern on the base substrate, and the light shielding pattern is made of a semiconductor material.

公开(公告)号：US20250017056A1

公开(公告)日：2025-01-09

申请号：US18892572

申请日：2024-09-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dapeng XUE ,  Shuilang DONG ,  Ke WANG ,  Zhanfeng CAO

IPC: H10K59/124 ,  H01L25/075 ,  H01L25/16 ,  H01L33/44 ,  H10K50/858 ,  H10K59/80 ,  H10K71/00

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed in the light transmittance region.

公开(公告)号：US20240194686A1

公开(公告)日：2024-06-13

申请号：US17908652

申请日：2021-10-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Shuilang DONG ,  Lizhong WANG ,  Dapeng XUE ,  Jiayu HE ,  Jie HUANG ,  Lubin SHI ,  Liping LEI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided is a thin film transistor and a method for manufacturing thereof, a display panel, and a display device, which relates to the field of display technologies. The thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. As an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, oxygen introduced in forming the oxygen supplementation layer in the thin film transistor is capable of diffusing to the target portion of the active layer, such that a defect in the target portion of the active layer is reduced, and a property of the thin film transistor is greater.