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公开(公告)号：US20230139138A1
公开(公告)日：2023-05-04
申请号：US17514262
申请日：2021-10-29
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Shu Satoh , Neil Bassom
IPC: H01J37/317 , H01L21/265 , H01J37/08 , H05H9/00
Abstract: An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.
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公开(公告)号：US20210398772A1
公开(公告)日：2021-12-23
申请号：US17348031
申请日：2021-06-15
Applicant: Axcelis Technologies, Inc.
Inventor： Shu Satoh , Wilhelm Platow
IPC: H01J37/317 , H01J37/147 , H01J37/09 , H01J37/141 , H01J37/153 , H01J37/21
Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.
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公开(公告)号：US20210398765A1
公开(公告)日：2021-12-23
申请号：US17330801
申请日：2021-05-26
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Platow , Neil Bassom , Shu Satoh , Paul Silverstein , Marvin Farley
Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.
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公开(公告)号：US20210249222A1
公开(公告)日：2021-08-12
申请号：US17168897
申请日：2021-02-05
Applicant: Axcelis Technologies, Inc.
Inventor： Causon Ko-Chuan Jen , Shu Satoh , Genise Bonacorsi , William Bintz
IPC: H01J37/317 , H01J37/08
Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.
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公开(公告)号：US20190088443A1
公开(公告)日：2019-03-21
申请号：US16124676
申请日：2018-09-07
Applicant: Axcelis Technologies, Inc.
Inventor： Shu Satoh
CPC classification number: H05H7/18 , C23C14/48 , H01J5/34 , H01J5/56 , H01J37/24 , H01J37/248 , H01J37/3171 , H01J2237/022 , H01J2237/0473 , H05H5/08
Abstract: An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.
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Patent Agency Ranking
16.发明申请公开(公告)号：US20160187302A1
公开(公告)日：2016-06-30
申请号：US14963703
申请日：2015-12-09
Applicant: Axcelis Technologies, Inc.
Inventor： Shu Satoh
CPC classification number: G01N29/34 , G01H13/00 , G01N29/09 , G01N29/12 , G01N29/2418 , G01N2291/014 , G01N2291/018 , G01N2291/028 , H01L21/67259 , H01L21/67288 , H01L21/6831 , H01L22/10
Abstract: A workpiece clamping status detection system and method for detecting a clamping state of a clamping device is provided. A clamping device having a clamping surface is configured to selectively clamp a workpiece to the clamping surface. The clamping device may be an electrostatic chuck or a mechanical clamp for selectively securing a semiconductor wafer thereto. A vibration-inducing mechanism is further provided, wherein the vibration-inducing mechanism is configured to selectively vibrate one or more of the clamping device and workpiece. A vibration-sensing mechanism is also provided, wherein the vibration-sensing mechanism is configured to detect the vibration of the one or more of the clamping device and workpiece. Detection of clamping status utilizes changes in acoustic properties, such as a shift of natural resonance frequency or acoustic impedance, to determine clamping condition of the workpiece. A controller is further configured to determine a clamping state associated with the clamping of the workpiece to the clamping surface, wherein the clamping state is associated with the detected vibration of the one or more of the clamping device and workpiece.
Abstract translation: 提供了用于检测夹紧装置的夹紧状态的工件夹紧状态检测系统和方法。 具有夹紧表面的夹紧装置构造成选择性地将工件夹紧到夹紧表面。 夹紧装置可以是用于将半导体晶片选择性地固定到其上的静电卡盘或机械夹具。 还提供了一种振动诱导机构，其中，所述振动诱导机构构造成选择性地振动所述夹紧装置和工件中的一个或多个。 还提供了一种振动感测机构，其中所述振动感测机构构造成检测所述夹紧装置和所述工件中的一个或多个的振动。 夹紧状态的检测利用声学特性的变化，例如固有谐振频率或声阻抗的移动，以确定工件的夹紧状态。 控制器还被配置为确定与将工件夹紧到夹紧表面相关联的夹紧状态，其中夹紧状态与夹紧装置和工件中的一个或多个的检测到的振动相关联。
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17.发明申请公开(公告)号：US20150214005A1
公开(公告)日：2015-07-30
申请号：US14168770
申请日：2014-01-30
Applicant: Axcelis Technologies, Inc.
Inventor： Shu Satoh
IPC: H01J37/304 , H01J37/317 , H01J37/30
CPC classification number: H01J37/304 , H01J37/3171 , H01J2237/24535 , H01J2237/30483
Abstract: A dosimetry system and method are provided for increasing utilization of an ion beam, wherein one or more side Faraday cups are positioned along a path of the ion beam and configured to sense a current thereof. The one or more side Faraday cups are separated by a distance associated with a diameter of the workpiece. The ion beam reciprocally scans across the workpiece, interlacing narrow scans and wide scans, wherein narrow scans are defined by reversing direction of the scanning near an edge of the workpiece, and wide scans are defined by reversing direction of the scanning at a position associated with an outboard region of the side Faraday cups. A beam current is sensed by the side Faraday cups concurrent with scanning the beam, wherein the side Faraday cups are connected to a dosimeter only concurrent with a wide scan of the ion beam, and are disconnected concurrent with narrow scans of the ion beam. The side Faraday cups are further connected to ground concurrent with narrow scans of the ion beam.
Abstract translation: 提供了一种用于增加离子束利用率的剂量测定系统和方法，其中一个或多个侧法拉第杯沿着离子束的路径定位并被配置为感测其电流。 一个或多个侧法拉第杯分开与工件直径相关联的距离。 离子束往复扫描穿过工件，交织窄扫描和宽扫描，其中窄扫描是通过在工件边缘附近反转扫描方向来定义的，并且宽扫描是通过在与 侧法拉第杯的外侧区域。 通过侧法拉第杯同时扫描光束来检测光束电流，其中侧法拉第杯与量子计只与离子束的宽扫描同时连接，并与离子束的窄扫描同时断开。 侧法拉第杯进一步连接到地面同时与离子束的窄扫描。
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公开(公告)号：US20250046563A1
公开(公告)日：2025-02-06
申请号：US18362429
申请日：2023-07-31
Applicant: Axcelis Technologies, Inc.
Inventor： Wilhelm Peter Platow , Edward C. Eisner , Shu Satoh
IPC: H01J37/141 , H01J37/21 , H01J37/244 , H01J37/317
Abstract: A magnetic focusing apparatus for focusing an ion beam has a first magnet pair, a first core having a first yoke and a pair of first pole members defining a pair of first poles. A second core has a second yoke and a pair of second pole members defining a pair of second poles. A first gap separates the pairs of first and second poles. First and second coils are respectively wound around the first and second cores. The pairs of first and second poles control a focus of the ion beam along a first plane based on a current, and the pairs of first and second poles define an exit trajectory of the ion beam along a second plane downstream of the first magnet pair. The exit trajectory does not angularly deviate along the second plane from an entrance trajectory upstream of the first magnet pair.
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公开(公告)号：US20210057182A1
公开(公告)日：2021-02-25
申请号：US16544000
申请日：2019-08-19
Applicant: Axcelis Technologies, Inc.
Inventor： Shu Satoh
IPC: H01J37/08 , H01J37/05 , H01J37/317
Abstract: Methods and a system of an ion implantation system are configured for increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Ions having a first charge state are provided from an ion source and are selected into a first RF accelerator and accelerated in to a first energy. The ions are stripped to convert them to ions having various charge states. A charge selector receives the ions of various charge states and selects a final charge state at the first energy. A second RF accelerator accelerates the ions to final energy spectrum. A final energy filter filters the ions to provide the ions at a final charge state at a final energy to a workpiece.
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公开(公告)号：US10024825B2
公开(公告)日：2018-07-17
申请号：US14963703
申请日：2015-12-09
Applicant: Axcelis Technologies, Inc.
Inventor： Shu Satoh
Abstract: A workpiece clamping status detection system and method for detecting a clamping state of a clamping device is provided. A clamping device having a clamping surface is configured to selectively clamp a workpiece to the clamping surface. The clamping device may be an electrostatic chuck or a mechanical clamp for selectively securing a semiconductor wafer thereto. A vibration-inducing mechanism is further provided, wherein the vibration-inducing mechanism is configured to selectively vibrate one or more of the clamping device and workpiece. A vibration-sensing mechanism is also provided, wherein the vibration-sensing mechanism is configured to detect the vibration of the one or more of the clamping device and workpiece. Detection of clamping status utilizes changes in acoustic properties, such as a shift of natural resonance frequency or acoustic impedance, to determine clamping condition of the workpiece. A controller is further configured to determine a clamping state associated with the clamping of the workpiece to the clamping surface, wherein the clamping state is associated with the detected vibration of the one or more of the clamping device and workpiece.
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