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    HIGH IMPEDANCE RF FILTER FOR HEATER WITH IMPEDANCE TUNING DEVICE
    12.
    发明申请
    HIGH IMPEDANCE RF FILTER FOR HEATER WITH IMPEDANCE TUNING DEVICE 审中-公开

    公开(公告)号：US20200010957A1

    公开(公告)日：2020-01-09

    申请号：US16574238

    申请日：2019-09-18

    Applicant: Applied Materials, Inc.

    Inventor： Jian J. CHEN ,  Mohamad A. AYOUB ,  Juan Carlos ROCHA-ALVAREZ ,  Zheng John YE ,  Ramprakash SANKARAKRISHNAN ,  Jianhua ZHOU

    IPC: C23C16/46 ,  C23C16/509 ,  H01J37/32

    Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

    AUTO FREQUENCY TUNED REMOTE PLASMA SOURCE
    15.
    发明申请
    AUTO FREQUENCY TUNED REMOTE PLASMA SOURCE 审中-公开
    自动频率调谐远程等离子体源

    公开(公告)号：US20160086772A1

    公开(公告)日：2016-03-24

    申请号：US14863153

    申请日：2015-09-23

    Applicant: Applied Materials, Inc.

    Inventor： Abdul Aziz KHAJA ,  Mohamad A. AYOUB ,  Ramesh BOKKA ,  Jay D. PINSON, II ,  Juan Carlos ROCHA-ALVAREZ

    IPC: H01J37/32

    CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32155 ,  H01J37/32357 ,  H01J37/32458

    Abstract: A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.

    Abstract translation: 公开了一种远程等离子体源，其包括芯元件和第一等离子体块，该第一等离子体块包括至少部分地围绕围绕芯元件的第一部分设置的环形等离子体产生区域的一个或多个表面。 远程等离子体源还包括围绕核心元件的相应第二部分设置的一个或多个线圈。 远程等离子体源还包括被配置为将RF功率信号驱动到基于所确定的等离子体产生区域的阻抗的一个或多个线圈上的RF电源。 来自RF功率信号的能量经由一个或多个线圈和核心元件与等离子体产生区域耦合。

    APPARATUS AND METHOD FOR TUNING A PLASMA PROFILE USING A TUNING RING IN A PROCESSING CHAMBER
    16.
    发明申请
    APPARATUS AND METHOD FOR TUNING A PLASMA PROFILE USING A TUNING RING IN A PROCESSING CHAMBER 审中-公开
    用于调节加工室内使用调谐环的等离子体轮廓的装置和方法

    公开(公告)号：US20160017494A1

    公开(公告)日：2016-01-21

    申请号：US14772228

    申请日：2014-02-12

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Mohamad A. AYOUB ,  Jian J. CHEN

    IPC: C23C16/505 ,  C23C16/52 ,  C23C16/458

    CPC classification number: C23C16/505 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32697 ,  H01J37/32935

    Abstract: Embodiments of the present invention relate to apparatus for improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning ring electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning ring. The plasma profile and the resulting deposition film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning ring.

    Abstract translation: 本发明的实施例涉及一种用于改善衬底等离子体处理期间的等离子体轮廓的装置。 根据实施例，该装置包括电耦合到可变电容器的调谐环。 控制电容以控制RF和所产生的等离子体耦合到调谐环。 相应地通过调节调谐环上的电容和阻抗来控制衬底上的等离子体轮廓和所得到的沉积膜厚度。

    HIGH IMPEDANCE RF FILTER FOR HEATER WITH IMPEDANCE TUNING DEVICE
    17.
    发明申请
    HIGH IMPEDANCE RF FILTER FOR HEATER WITH IMPEDANCE TUNING DEVICE 审中-公开
    具有阻抗调谐装置的加热器高阻抗RF滤波器

    公开(公告)号：US20140302256A1

    公开(公告)日：2014-10-09

    申请号：US14228227

    申请日：2014-03-27

    Applicant: Applied Materials, Inc.

    Inventor： Jian J. CHEN ,  Mohamad A. AYOUB ,  Juan Carlos ROCHA-ALVAREZ ,  Zheng John YE ,  Ramprakash SANKARAKRISHNAN ,  Jianhua ZHOU

    IPC: C23C16/513

    CPC classification number: C23C16/46 ,  C23C16/5096 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32715 ,  H01J37/32724

    Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

    Abstract translation: 实施例提供等离子体处理装置，基板支撑组件和控制等离子体工艺的方法。 设备和基板支撑组件包括基板支撑基座，调谐组件，其包括设置在基座中并电耦合到射频（RF）调谐器的调谐电极，以及加热组件，该加热组件包括一个或多个设置的加热元件 在基座内用于控制基板的温度分布，其中至少一个加热元件电耦合到RF滤波器电路，RF滤波器电路包括与第一电感器的形成的电容并联的第一电感器。 RF滤波器的高阻抗可以通过调谐RF滤波器电路的谐振来实现，这导致更少的RF泄漏和更好的衬底处理结果。

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