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    Chuck for processing semiconductor workpieces at high temperatures
    11.
    发明授权
    Chuck for processing semiconductor workpieces at high temperatures 有权

    公开(公告)号：US12046503B2

    公开(公告)日：2024-07-23

    申请号：US17510991

    申请日：2021-10-26

    Applicant: Applied Materials, Inc.

    Inventor： Dawei Sun ,  Daniel Hall

    IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687 ,  H01T23/00

    CPC classification number: H01L21/6833 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68721 ,  H01L21/68742

    Abstract: A chuck for heating and clamping a workpiece, such as a semiconductor workpiece, is disclosed. The chuck is configured to allow the workpiece to be heated to temperatures in excess of 600° C. Further, while the workpiece is heating, the components that make up the chuck may be maintained at a much lower temperature, such as room temperature. The chuck includes a housing, formed as a hollow cylinder with sidewalls and an open end. Electrodes are disposed at the top surface of the sidewalls to clamp the workpiece. A heat source is disposed in the cavity and emits radiated heat toward the workpiece. A clamp ring may be used to secure the workpiece. In some embodiments, a thermal sensor is used to monitor the temperature of the workpiece.

    MANAGING BEAM POWER EFFECTS BY VARYING BASE EMISSIVITY
    12.
    发明公开
    MANAGING BEAM POWER EFFECTS BY VARYING BASE EMISSIVITY 审中-公开

    公开(公告)号：US20240087839A1

    公开(公告)日：2024-03-14

    申请号：US17943753

    申请日：2022-09-13

    Applicant: Applied Materials, Inc.

    Inventor： Dawei Sun ,  Eric D. Hermanson ,  Benjamin E. Heneveld

    IPC: H01J37/20 ,  G02F1/163 ,  H01J37/02 ,  H05B1/02

    CPC classification number: H01J37/20 ,  G02F1/163 ,  H01J37/023 ,  H05B1/0233 ,  H01J37/3171 ,  H01J2237/2007

    Abstract: A workpiece mounting system comprising a chuck and a base is disclosed. The emissivity of the base is increased to allow more heat transfer from the chuck to the base. In some embodiments, the emissivity of the base may be controllable so that for ion beams with lower power levels, the emissivity remains low, enabling the chuck to reach the desired temperature quickly. For ion beams with higher power levels, the emissivity may increase to allow more heat transfer to the base, allowing the chuck to maintain the desired temperature. High emissivity coatings may be applied to the top surface of the base. In other embodiments, a set of movable shields may be disposed between the chuck and the base. The position of the shields may be a function of the power level of the incoming ion beam.

    System and method for dissipating workpiece charge build up
    13.
    发明授权
    System and method for dissipating workpiece charge build up 有权

    公开(公告)号：US11864299B2

    公开(公告)日：2024-01-02

    申请号：US17740859

    申请日：2022-05-10

    Applicant: Applied Materials, Inc.

    Inventor： David Morrell ,  Dawei Sun ,  Qin Chen

    IPC: H05F3/06

    CPC classification number: H05F3/06

    Abstract: A system and method for reducing charge on a workpiece disposed on a platen is disclosed. The system includes an ionizer to generate ionized gas from the source of backside gas. The ionizer may be used to introduce ionized gas into the backside gas channels of the platen. A controller is used to selectively allow backside gas and/or ionized gas into the backside gas channels. In certain embodiments, the platen also includes an exhaust channel in communication with an exhaust valve to ensure that the pressure within the volume between the top surface of the platen and the workpiece is maintained in a desired range. In one embodiment, the system includes a valving system in communication with the source of backside gas and also in communication with the ionizer. In another embodiment, the amount of ionization performed by the ionizer is programmable.

    Solid state heater and method of manufacture
    14.
    发明授权
    Solid state heater and method of manufacture 有权

    公开(公告)号：US11665786B2

    公开(公告)日：2023-05-30

    申请号：US16704269

    申请日：2019-12-05

    Applicant: Applied Materials, Inc.

    Inventor： David Morrell ,  Dawei Sun

    IPC: H05B1/02 ,  C23C16/32 ,  H05B3/14

    CPC classification number: H05B1/0233 ,  C23C16/325 ,  H05B3/145 ,  H05B3/148

    Abstract: A solid state heater and methods of manufacturing the heater is disclosed. The heater comprises a unitary component that includes portions that are graphite and other portions that are silicon carbide. Current is conducted through the graphite portion of the unitary structure between two or more terminals. The silicon carbide does not conduct electricity, but is effective at conducting the heat throughout the unitary component. In certain embodiments, chemical vapor conversion (CVC) is used to create the solid state heater. If desired, a coating may be applied to the unitary component to protect it from a harsh environment.

    Chuck For Processing Semiconductor Workpieces At High Temperatures
    15.
    发明申请
    Chuck For Processing Semiconductor Workpieces At High Temperatures 有权

    公开(公告)号：US20230132307A1

    公开(公告)日：2023-04-27

    申请号：US17510991

    申请日：2021-10-26

    Applicant: Applied Materials, Inc.

    Inventor： Dawei Sun ,  Daniel Hall

    IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

    Abstract: A chuck for heating and clamping a workpiece, such as a semiconductor workpiece, is disclosed. The chuck is configured to allow the workpiece to be heated to temperatures in excess of 600° C. Further, while the workpiece is heating, the components that make up the chuck may be maintained at a much lower temperature, such as room temperature. The chuck includes a housing, formed as a hollow cylinder with sidewalls and an open end. Electrodes are disposed at the top surface of the sidewalls to clamp the workpiece. A heat source is disposed in the cavity and emits radiated heat toward the workpiece. A clamp ring may be used to secure the workpiece. In some embodiments, a thermal sensor is used to monitor the temperature of the workpiece.

    Deflectable platens and associated methods
    19.
    发明授权
    Deflectable platens and associated methods 有权

    公开(公告)号：US11302536B2

    公开(公告)日：2022-04-12

    申请号：US16657020

    申请日：2019-10-18

    Applicant: APPLIED Materials, Inc.

    Inventor： Ming Yin ,  Dawei Sun

    IPC: H01L21/67 ,  H01L21/324 ,  H01L21/20 ,  H01L21/683

    Abstract: A deflectable platen including a first layer formed of a material having a first coefficient of thermal expansion (CTE), and a second layer bonded to the first layer and having a second CTE, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE.

    DEFLECTABLE PLATENS AND ASSOCIATED METHODS
    20.
    发明申请
    DEFLECTABLE PLATENS AND ASSOCIATED METHODS 有权

    公开(公告)号：US20210118692A1

    公开(公告)日：2021-04-22

    申请号：US16657020

    申请日：2019-10-18

    Applicant: APPLIED Materials, Inc.

    Inventor： Ming Yin ,  Dawei Sun

    IPC: H01L21/324 ,  H01L21/20

    Abstract: A deflectable platen including a first layer formed of a material having a first coefficient of thermal expansion (CTE), and a second layer bonded to the first layer and having a second CTE, the second layer including a plurality of electrodes embedded therein for facilitating electrostatic clamping of wafers to the second layer, wherein the second CTE is different than the first CTE.

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