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公开(公告)号:US20240063310A1
公开(公告)日:2024-02-22
申请号:US17819957
申请日:2022-08-16
Applicant: Allegro MicroSystems, LLC
Inventor: Yu-Chun Li , Felix Palumbo , Chung C. Kuo , Thomas S. Chung , Maxim Klebanov
IPC: H01L29/872 , H01L29/06 , H01L29/40
CPC classification number: H01L29/872 , H01L29/0623 , H01L29/402
Abstract: A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.
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公开(公告)号:US20230228828A1
公开(公告)日:2023-07-20
申请号:US17648151
申请日:2022-01-17
Applicant: Allegro MicroSystems, LLC
Inventor: Maxim Klebanov , Yen Ting Liu , Paolo Campiglio , Sundar Chetlur , Harianto Wong
CPC classification number: G01R33/093 , G01R3/00 , G01R33/098
Abstract: In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.
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公开(公告)号:US11630169B1
公开(公告)日:2023-04-18
申请号:US17648154
申请日:2022-01-17
Applicant: Allegro MicroSystems, LLC
Inventor: Yen Ting Liu , Maxim Klebanov , Paolo Campiglio , Sundar Chetlur , Harianto Wong
Abstract: In one aspect, a method includes forming a metal layer on a substrate, wherein the metal layer comprises a first coil, forming a planarized insulator layer on the metal layer, forming at least one via in the planarized insulator layer, depositing a magnetoresistance (MR) element on the planarized insulator layer, and forming a second coil extending above the MR element. The at least one via electrically connects to the metal layer on one end and to MR element on the other end.
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公开(公告)号:US20230084169A1
公开(公告)日:2023-03-16
申请号:US18051151
申请日:2022-10-31
Applicant: Allegro MicroSystems, LLC
Inventor: Sundar Chetlur , Maxim Klebanov , Cory Voisine , Kenneth Snowdon , Hsuan-Jung Wu
IPC: H01L23/522 , H01L21/8234
Abstract: An apparatus including; a substrate; an isolator that is formed over the substrate, the isolator including a silicon shield layer that is formed between a first buried oxide (BOX) layer and a second BOX layer; a silicon layer having an oxide trench structure formed therein, the oxide trench structure being arranged to define a first silicon island and a second silicon island; a first electronic circuit that is formed over the first silicon island; and a second electronic circuit that is formed over the second silicon island, the first electronic circuit being electrically coupled to the first electronic circuit.
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公开(公告)号:US20210057642A1
公开(公告)日:2021-02-25
申请号:US17089798
申请日:2020-11-05
Applicant: Allegro MicroSystems, LLC
Inventor: Yen Ting Liu , Maxim Klebanov , Bryan Cadugan , Sundar Chetlur , Harianto Wong
IPC: H01L43/12
Abstract: An apparatus including a magnetoresistance element having conductive contacts disposed between the magnetoresistance element and a semiconductor substrate.
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公开(公告)号:US10468485B2
公开(公告)日:2019-11-05
申请号:US15606043
申请日:2017-05-26
Applicant: Allegro MicroSystems, LLC
Inventor: Sundar Chetlur , Maxim Klebanov , Washington Lamar
IPC: H01L29/08 , H01L27/088 , H01L27/02 , H01L21/8234 , H01L29/423 , H01L29/78 , H01L29/51 , H01L29/06
Abstract: A metal-oxide semiconductor (MOS) transistor structure is provided herein having one or more horizontal and/or one or more vertical MOS transistor structures formed around trench and liner isolation regions. The trench region serves as a gate electrode, while the liner is formed around the sidewalls of trench region and serves as a gate dielectric of a parasitic MOS within the transistor structure. The MOS transistor structure includes various doped regions formed around one or more portions of the trench and liner regions. The doped regions can have one or more different doping types such that in response to a voltage applied to the trench region, a channel region is formed in at least one of the doped regions and provides a current path within the MOS transistor between different doped regions.
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公开(公告)号:US20190265018A1
公开(公告)日:2019-08-29
申请号:US16282539
申请日:2019-02-22
Applicant: Allegro MicroSystems, LLC
Inventor: Alexander Latham , Maxim Klebanov
IPC: G01B7/30 , G01R33/00 , G01R33/028 , G01R33/06
Abstract: Methods and apparatus for a sensor with a main coil to direct a magnetic field at a rotating target for inducing eddy currents in an end of the target and a sensing element to detect a magnetic field reflected from the target, wherein the target end comprises a conductive surface. The reflected magnetic field can be processed to determine an angular position of the target.
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公开(公告)号:US20190155322A1
公开(公告)日:2019-05-23
申请号:US16259087
申请日:2019-01-28
Applicant: Allegro MicroSystems, LLC
Inventor: Richard B. Cooper , Maxim Klebanov , Washington Lamar , Devon Fernandez
IPC: G05F3/02 , H03K19/003 , H01L43/02
Abstract: An electronic circuit includes a driver circuit having an output terminal that can be coupled to a load to drive the load. A control circuit is coupled to the driver circuit for controlling the driver circuit. A transistor is coupled in series between the driver circuit and the output terminal. The transistor has a first terminal coupled to the driver circuit and a second terminal coupled to the output terminal. A biasing circuit is coupled to a gate terminal of the transistor and configured to provide a constant voltage to the gate terminal to bias the transistor to a conducting state to reduce the susceptibility of the electronic circuit to electromagnetic interference. The biasing circuit includes a voltage regulator, a Zener diode, and a capacitor. The Zener diode and capacitor are coupled to the gate terminal and a reference terminal.
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公开(公告)号:US20190067562A1
公开(公告)日:2019-02-28
申请号:US15689185
申请日:2017-08-29
Applicant: Allegro MicroSystems, LLC
Inventor: Sundar Chetlur , Harianto Wong , Maxim Klebanov , William P. Taylor , Michael C. Doogue
IPC: H01L43/06 , H01L43/04 , H01L43/08 , H01L43/14 , H01L25/065
Abstract: Methods and apparatus for a signal isolator having a dielectric interposer supporting first and second die each having a magnetic field sensing element. A first signal path extends from the first die to the second die and a second signal path extends from the second die to the first die. In embodiments, the first signal path is located in the interposer and includes a first coil to generate a magnetic field and the second signal path is located in the interposer and includes a second coil to generate a magnetic filed. The first coil is located in relation to the second magnetic field sensing element of the second die and the second coil is located in relation to the first magnetic field sensing element of the first die.
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公开(公告)号:US10147689B2
公开(公告)日:2018-12-04
申请号:US15907445
申请日:2018-02-28
Applicant: Allegro MicroSystems, LLC
Inventor: Washington Lamar , Maxim Klebanov
IPC: H01L23/60 , H01L23/495 , H01L23/31 , H01L25/065 , H01L21/48 , H01L21/56 , H01L25/00
Abstract: An electronic device includes a package, a plurality of external leads extending outside the package, a first die within the package having one or more first contacts electrically coupled to at least a first one of the external leads, and a second die within the package having one or more second contacts electrically coupled to at least a second one of the external leads. A capacitive coupling may be positioned between the first and second die to allow electrostatic discharge (ESD) current to flow between the first die and the second die in response to an ESD event and to electrically isolate the first and second die from each other in the absence of the ESD event.
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