公开(公告)号：US20170184981A1

公开(公告)日：2017-06-29

申请号：US15388601

申请日：2016-12-22

Applicant: ASML Netherlands B.V.

Inventor： Richard QUINTANILHA ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/88 ,  H05G2/00

CPC classification number: G03F7/70633 ,  G01N21/8806 ,  G01N21/956 ,  G01N2021/95676 ,  G03F7/70625 ,  G03F7/7065 ,  H05G2/008

Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

公开(公告)号：US20170031246A1

公开(公告)日：2017-02-02

申请号：US15216998

申请日：2016-07-22

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF

IPC: G03F7/20 ,  G01B11/27 ,  G01N21/47

CPC classification number: G03F7/70133 ,  G01B11/272 ,  G01N21/4788 ,  G01N2201/06113 ,  G03F7/70625 ,  G03F7/70633

Abstract: An inspection apparatus is provided for measuring properties of a non-periodic product structure (500′). A radiation source (402) and an image detector (408) provide a spot (S) of radiation on the product structure. The radiation is spatially coherent and has a wavelength less than 50 nm, for example in the range 12-16 nm or 1-2 nm. The image detector is arranged to capture at least one diffraction pattern (606) formed by said radiation after scattering by the product structure. A processor receives the captured pattern and also reference data (612) describing assumed structural features of the product structure. The process uses coherent diffraction imaging (614) to calculate a 3-D image of the structure using the captured diffraction pattern(s) and the reference data. The coherent diffraction imaging may be for example ankylography or ptychography. The calculated image deviates from the nominal structure, and reveals properties such as CD, overlay.

Abstract translation: 提供了用于测量非周期性产品结构（500'）的性质的检查装置。 辐射源（402）和图像检测器（408）在产品结构上提供辐射点（S）。 辐射是空间相干的并且具有小于50nm的波长，例如在12-16nm或1-2nm的范围内。 图像检测器布置成捕获由产品结构散射之后由所述辐射形成的至少一个衍射图案（606）。 处理器接收捕获的图案以及描述产品结构的假定的结构特征的参考数据（612）。 该方法使用相干衍射成像（614）来使用捕获的衍射图案和参考数据来计算结构的3-D图像。 相干衍射成像可以是例如基质照相术或ptychography。 计算的图像偏离标称结构，并显示诸如CD，叠加等属性。

公开(公告)号：US20160370717A1

公开(公告)日：2016-12-22

申请号：US15181126

申请日：2016-06-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Timothy Dugan DAVIS ,  Peter David ENGBLOM ,  Kaustuve BHATTACHARYYA

IPC: G03F9/00 ,  G01B11/27

CPC classification number: G03F9/7069 ,  G01B11/272 ,  G03F7/70633

Abstract: A method including: determining recipe consistencies between one substrate measurement recipe of a plurality of substrate measurement recipes and each other substrate measurement recipe of the plurality of substrate measurement recipes; calculating a function of the recipe consistencies; eliminating the one substrate measurement recipe from the plurality of substrate measurement recipes if the function meets a criterion; and reiterating the determining, calculating and eliminating until a termination condition is met. Also disclosed herein is a substrate measurement apparatus, including a storage configured to store a plurality of substrate measurement recipes, and a processor configured to select one or more substrate measurement recipes from the plurality of substrate measurement recipes based on recipe consistencies among the plurality of substrate measurement recipes.

Abstract translation: 一种方法，包括：确定多个基板测量配方的一个基板测量配方与多个基板测量配方的每个其它基板测量配方之间的配方一致性; 计算配方一致性的功能; 如果功能满足标准，则从多个基板测量配方中消除一个基板测量配方; 并重申确定，计算和消除，直到满足终止条件。 本文还公开了一种基板测量装置，其包括被配置为存储多个基板测量配方的存储器，以及配置为基于多个基板中的配方一致性从多个基板测量配方中选择一个或多个基板测量配方的处理器 测量食谱。

公开(公告)号：US20160320712A1

公开(公告)日：2016-11-03

申请号：US15105339

申请日：2014-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Arie Jeffrey DEN BOEF

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01B2210/56 ,  G01N21/4788 ,  G01N21/956 ,  G01N2021/8845 ,  G03F7/70616

Abstract: Disclosed are an inspection method and apparatus and an associated lithographic apparatus. The inspection method comprises illuminating a structure with inspection radiation of a selected wavelength, the structure being of a type comprising a plurality of layers (for example a 3D memory structure). The resultant diffraction signal is detected a physical property of a subset of said layers is determined from said diffraction signal. The subset of layers for which said physical property is determined is dependent upon the selected wavelength of the inspection radiation.

Abstract translation: 公开了一种检查方法和装置以及相关的光刻设备。 检查方法包括用所选波长的检查辐射照射结构，该结构是包括多个层（例如3D存储器结构）的类型。 从所述衍射信号中确定所得到的衍射信号，所述层的子集的物理性质确定。 确定所述物理性质的层子集取决于所选择的检查辐射波长。

公开(公告)号：US20160097983A1

公开(公告)日：2016-04-07

申请号：US14892880

申请日：2014-05-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Erik Willem BOGAART ,  Franciscus Godefridus Casper BIJNEN ,  Arie Jeffrey DEN BOEF ,  Simon Gijsbert Josephus MATHIJSSEN

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/95

CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.

Abstract translation: 衬底具有器件结构和计量结构（800）。 器件结构包括显示一个或多个波长的激发辐射的非弹性散射的材料。 器件结构包括在一个或多个维度上足够小的结构，非弹性散射的特性受到量子限制的显着影响。 测量结构（800）包括与装置特征相似的组成和尺寸的装置状结构（800b）和校准结构（800a）。 校准结构类似于组合中的器件特征，但至少在一个维度上不同。 通过使用实施拉曼光谱的检查装置和方法，可以通过比较从器件状结构和校准结构中弹性散射的辐射的光谱特征来测量器件状结构的尺寸。

公开(公告)号：US20130148121A1

公开(公告)日：2013-06-13

申请号：US13687569

申请日：2012-11-28

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Martin Jacobus Johan JAK ,  Michael KUBIS

IPC: G01B11/00

CPC classification number: G01B11/24 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  G03F9/7092

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

Abstract translation: 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。

公开(公告)号：US20240403537A1

公开(公告)日：2024-12-05

申请号：US18806274

申请日：2024-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David FOUQUET ,  Bernardo KASTRUP ,  Arie Jeffrey DEN BOEF ,  Johannes Catharinus Hubertus MULKENS ,  James Benedict KAVANAGH ,  James Patrick KOONMEN ,  Neal Patrick CALLAN

IPC: G06F30/398 ,  G03F7/00 ,  G06F30/20 ,  G06N7/01 ,  H01L21/66

Abstract: A defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US20240184218A1

公开(公告)日：2024-06-06

申请号：US18441772

申请日：2024-02-14

Applicant: ASML Netherlands B.V.

Inventor： Nitesh PANDEY ,  Arie Jeffrey DEN BOEF ,  Duygu AKBULUT ,  Marinus Johannes Maria VAN DAM ,  Hans BUTLER ,  Hugo Augustinus Joseph CRAMER ,  Engelbertus Antonius Fransiscus VAN DER PASCH ,  Ferry ZIJP ,  Jeroen Arnoldus Leonardus Johannes RAAYMAKERS ,  Marinus Petrus REIJNDERS

IPC: G03F7/00 ,  G01N21/956

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F7/7015 ,  G03F7/70633

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

公开(公告)号：US20240061348A1

公开(公告)日：2024-02-22

申请号：US18268847

申请日：2021-12-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Arnoldus Leonardus Johannes RAAYMAKERS ,  Bram Antonius Gerardus LOMANS ,  Arie Jeffrey DEN BOEF ,  Hans BUTLER

IPC: G03F7/00

CPC classification number: G03F7/706843 ,  G03F7/7085

Abstract: A metrology apparatus for measuring a parameter of interest of a target on a substrate, the metrology apparatus including: m×n detectors, wherein m≥1 and n≥1; a first frame; and (n−1) second frames; and (m−1)×n intermediate frames, wherein each detector is connected to one of the intermediate or first or second frames via a primary positioning assembly; and each intermediate frame is connected to one of the first or second frames via a secondary positioning assembly.

公开(公告)号：US20240044639A1

公开(公告)日：2024-02-08

申请号：US18486811

申请日：2023-10-13

Applicant: ASML Netherlands B.V.

Inventor： Henricus Petrus Maria PELLEMANS ,  Arie Jeffrey DEN BOEF

IPC: G01B11/24 ,  G03F7/00

CPC classification number: G01B11/24 ,  G03F7/70633 ,  G03F7/7085 ,  G03F7/70191

Abstract: A scatterometer for measuring a property of a target on a substrate includes a radiation source, a detector, and a processor. The radiation source produces a radiated spot on the target. The scatterometer adjusts a position of the radiated spot along a first direction across the target and along a second direction that is at an angle with respect to the first direction. The detector receives radiation scattered by the target. The received radiation is associated with positions of the radiated spot on the target along at least the first direction. The detector generates measurement signals based on the positions of the radiated spot on the target. The processor outputs, based on the measurement signals, a single value that is representative of the property of the target. The processor also combines the measurement signals to output a combined signal and derives, based on the combined signal, the single value.