公开(公告)号：US20110309259A1

公开(公告)日：2011-12-22

申请号：US12929203

申请日：2011-01-07

申请人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

发明人： Sun-il Kim ,  Jae-chul Park ,  Sang-wook Kim ,  Chang-jung Kim

IPC分类号： G01T1/24 ,  H01L31/18

CPC分类号： G01T1/24 ,  H01L24/24 ,  H01L24/73 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L27/14687 ,  H01L31/085 ,  H01L2224/16225 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00

摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.

摘要翻译： 提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定 集成电路（ASIC），每个对应于该组中的一个。 每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

公开(公告)号：US20110230021A1

公开(公告)日：2011-09-22

申请号：US13067306

申请日：2011-05-24

申请人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

发明人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

IPC分类号： H01L21/336

CPC分类号： H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

摘要： Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

公开(公告)号：US20110147734A1

公开(公告)日：2011-06-23

申请号：US12801531

申请日：2010-06-14

申请人： Sang-wook Kim ,  Sun-il Kim ,  Chang-jung Kim ,  Jae-chul Park

发明人： Sang-wook Kim ,  Sun-il Kim ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

摘要： Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.

摘要翻译： 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括栅极绝缘体，其中至少一个表面被等离子体处理。 栅极绝缘体的表面可以是与沟道层接触的界面。 界面可以通过使用含氟（F）的气体用等离子体处理，因此可以包括氟（F）。 用等离子体处理的界面可以抑制由于光引起的晶体管的特性变化。

公开(公告)号：US20110108704A1

公开(公告)日：2011-05-12

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01L27/146 ,  H01L31/09 ,  H01L31/101 ,  H01L31/102

CPC分类号： H04N9/045 ,  H01L27/14643 ,  H04N5/3745

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

摘要翻译： 图像传感器及其操作方法。 图像传感器包括包括多个像素的像素阵列。 多个像素中的每一个包括光电传感器，其电压 - 电流特性根据入射光的能量而变化，并且产生由入射光的能量确定的感测电流; 根据用于复位所述多个像素中的至少一个的复位信号，被激活以产生参考电流的复位单元; 以及转换单元，其将感测电流和参考电流分别转换为感测电压和参考电压。

公开(公告)号：US07910920B2

公开(公告)日：2011-03-22

申请号：US12005395

申请日：2007-12-27

申请人： Jae-chul Park ,  Young-soo Park ,  Sun-Il Kim

发明人： Jae-chul Park ,  Young-soo Park ,  Sun-Il Kim

IPC分类号： H01L29/08 ,  H01L51/00 ,  H01L29/10 ,  H01L29/12 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/78609

摘要： A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.

公开(公告)号：US20110042669A1

公开(公告)日：2011-02-24

申请号：US12923472

申请日：2010-09-23

申请人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

发明人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78696

摘要： A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.

摘要翻译： 晶体管可以包括：栅极绝缘层，形成在栅极绝缘层的底侧的栅电极，形成在栅极绝缘层的顶侧的沟道层，源极与沟道层的第一部分接触 以及与沟道层的第二部分接触的漏电极。 沟道层可以具有双层结构，包括上层和下层。 上层可以具有低于下层的载流子浓度。 上层可以掺杂载体受体以使电阻高于下层的电阻。

公开(公告)号：US07889552B2

公开(公告)日：2011-02-15

申请号：US12068409

申请日：2008-02-06

申请人： Jae-chul Park ,  Jae-woong Hyun ,  Young-soo Park ,  Sun-il Kim

发明人： Jae-chul Park ,  Jae-woong Hyun ,  Young-soo Park ,  Sun-il Kim

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/0483 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor device according to example embodiments may include a plurality of memory cells on a semiconductor substrate and at least one selection transistor on the semiconductor substrate, wherein the at least one selection transistor may be disposed at a different level from the plurality of memory cells. The at least one selection transistor may be connected to a data line and/or a power source line via a first contact and/or a third contact, respectively. The at least one selection transistor may be connected to the plurality of memory cells via a second contact and/or a fourth contact. The active layer of the at least one selection transistor may contain an oxide. Accordingly, the nonvolatile semiconductor device according to example embodiments may include a selection transistor having a reduced size.

摘要翻译： 根据示例实施例的非易失性半导体器件可以包括半导体衬底上的多个存储单元和半导体衬底上的至少一个选择晶体管，其中所述至少一个选择晶体管可以设置在与所述多个存储单元不同的电平 。 所述至少一个选择晶体管可以分别经由第一触点和/或第三触点连接到数据线和/或电源线。 所述至少一个选择晶体管可以经由第二触点和/或第四触点连接到所述多个存储单元。 所述至少一个选择晶体管的有源层可以含有氧化物。 因此，根据示例性实施例的非易失性半导体器件可以包括具有减小的尺寸的选择晶体管。

公开(公告)号：US20100283048A1

公开(公告)日：2010-11-11

申请号：US12591909

申请日：2009-12-04

申请人： Sung-ho Park ,  I-hun Song ,  Wook Lee ,  Sang-wook Kim ,  Sun-il Kim ,  Jae-chul Park

发明人： Sung-ho Park ,  I-hun Song ,  Wook Lee ,  Sang-wook Kim ,  Sun-il Kim ,  Jae-chul Park

IPC分类号： H01L31/032

CPC分类号： H01L27/14636 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14689

摘要： Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.

摘要翻译： 提供了具有能够增加单位像素中的光电二极管的面积并扩大光电二极管的光接收面积的结构的互补金属氧化物半导体（CMOS）图像传感器。 在CMOS图像传感器中，可以在光电二极管上形成传输晶体管，并且可以在不形成传输晶体管的层上形成复位晶体管，源极跟随器晶体管和选择晶体管。 在这样的CMOS图像传感器中，可以以单位像素增加光电二极管的面积，从而可以减小单位像素的尺寸，并且可以提高像素的灵敏度。

公开(公告)号：US20100264956A1

公开(公告)日：2010-10-21

申请号：US12591654

申请日：2009-11-25

申请人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

发明人： Huaxiang Yin ,  I-hun Song ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

IPC分类号： H03K19/20 ,  H01L21/70 ,  H01L27/088

CPC分类号： H01L21/823807 ,  H01L27/0922 ,  H01L27/1225 ,  H01L27/1251

摘要： Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter.

摘要翻译： 提供逆变器，逆变器的制造方法以及包括逆变器的逻辑电路。 反相器可以包括具有不同沟道层结构的第一晶体管和第二晶体管。 第一晶体管的沟道层可以包括下层和上层，并且第二晶体管的沟道层可以与下层和上层之一相同。 下层和上层中的至少一层可以是氧化物层。 逆变器可以是增强/耗尽型（E / D）型逆变器或互补型逆变器。

公开(公告)号：US20100208152A1

公开(公告)日：2010-08-19

申请号：US12654701

申请日：2009-12-29

申请人： Sun-il Kim ,  Jong-min Kim

发明人： Sun-il Kim ,  Jong-min Kim

IPC分类号： G02F1/29

CPC分类号： G02F1/29 ,  G02B3/14 ,  G02B26/004 ,  G02F1/1323 ,  G02F1/13439 ,  G02F2001/294 ,  G02F2202/36 ,  H04N13/305 ,  H04N13/359

摘要： An integral imaging system may include a lens unit. The lens unit may include a first substrate; a second substrate; a first electrode on the first substrate; a second electrode on the second substrate; a liquid crystal layer between the first and second substrates; and an array of nanostructures protruding from the first substrate into the liquid crystal layer. The first and second electrodes may be configured to apply one or more voltages to the array of nanostructures. When the one or more voltages are applied to the array of nanostructures, one or more electric fields may be formed between the array of nanostructures and the second electrode, varying an arrangement of molecules in the liquid crystal layer and forming a refractive index distribution in the liquid crystal layer.

摘要翻译： 整体成像系统可以包括透镜单元。 透镜单元可以包括第一基板; 第二基板; 第一基板上的第一电极; 第二基板上的第二电极; 第一和第二基板之间的液晶层; 以及从第一基板突出到液晶层的纳米结构的阵列。 第一和第二电极可以被配置为向纳米结构阵列施加一个或多个电压。 当将一个或多个电压施加到纳米结构阵列时，可以在纳米结构阵列和第二电极之间形成一个或多个电场，改变液晶层中分子的排列并在其中形成折射率分布 液晶层。